DE69220722D1 - Leistungsbauelement mit Sperrspannungsschutz - Google Patents

Leistungsbauelement mit Sperrspannungsschutz

Info

Publication number
DE69220722D1
DE69220722D1 DE69220722T DE69220722T DE69220722D1 DE 69220722 D1 DE69220722 D1 DE 69220722D1 DE 69220722 T DE69220722 T DE 69220722T DE 69220722 T DE69220722 T DE 69220722T DE 69220722 D1 DE69220722 D1 DE 69220722D1
Authority
DE
Germany
Prior art keywords
power component
reverse voltage
voltage protection
protection
reverse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69220722T
Other languages
English (en)
Other versions
DE69220722T2 (de
Inventor
Stephen Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69220722D1 publication Critical patent/DE69220722D1/de
Application granted granted Critical
Publication of DE69220722T2 publication Critical patent/DE69220722T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE69220722T 1991-05-03 1992-04-24 Leistungsbauelement mit Sperrspannungsschutz Expired - Fee Related DE69220722T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/695,490 US5151767A (en) 1991-05-03 1991-05-03 Power integrated circuit having reverse-voltage protection

Publications (2)

Publication Number Publication Date
DE69220722D1 true DE69220722D1 (de) 1997-08-14
DE69220722T2 DE69220722T2 (de) 1998-01-29

Family

ID=24793210

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69220722T Expired - Fee Related DE69220722T2 (de) 1991-05-03 1992-04-24 Leistungsbauelement mit Sperrspannungsschutz

Country Status (5)

Country Link
US (1) US5151767A (de)
EP (1) EP0512605B1 (de)
JP (1) JPH06105785B2 (de)
KR (1) KR100286842B1 (de)
DE (1) DE69220722T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1261880B (it) * 1992-02-17 1996-06-03 St Microelectronics Srl Dispositivo di isolamento del substrato, particolarmente per circuiti integrati
US5517048A (en) * 1993-07-23 1996-05-14 Vlsi Technology, Inc. Pad structure with parasitic MOS transistor for use with semiconductor devices
DE69517948T2 (de) * 1995-02-28 2001-03-08 Co.Ri.M.Me., Catania Schaltkreis zum Vorspannen von epitaxialen Gebieten
US5811856A (en) * 1995-11-13 1998-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Layout of ESD input-protection circuit
JP3036423B2 (ja) * 1996-02-06 2000-04-24 日本電気株式会社 半導体装置
JPH1079472A (ja) * 1996-09-05 1998-03-24 Mitsubishi Electric Corp 半導体集積回路
TW320773B (en) * 1996-11-25 1997-11-21 Winbond Electronics Corp Multi-finger MOS component
JP3911566B2 (ja) 1998-01-27 2007-05-09 富士電機デバイステクノロジー株式会社 Ｍｏｓ型半導体装置
EP1049165B1 (de) * 1999-04-30 2002-09-11 STMicroelectronics S.r.l. Integrierter Schaltkreis mit einer Leistungsschaltung und einer Steuerschaltung, ohne parasitäre Ströme
JP4115084B2 (ja) * 2000-12-06 2008-07-09 株式会社リコー 半導体装置及びリチウムイオン電池パック
JP6190204B2 (ja) * 2012-09-25 2017-08-30 エスアイアイ・セミコンダクタ株式会社 半導体装置
US20150014825A1 (en) * 2013-07-15 2015-01-15 United Microelectronics Corp. Esd protection device
US10177135B2 (en) * 2016-05-18 2019-01-08 Vanguard International Semiconductor Corporation Integrated circuit and electrostatic discharge protection circuit thereof
CN111192871B (zh) * 2020-01-06 2022-04-15 杰华特微电子股份有限公司 用于静电防护的晶体管结构及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829709A (en) * 1973-08-31 1974-08-13 Micro Components Corp Supply reversal protecton circuit
JPS5422781A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Insulator gate protective semiconductor device
US4426658A (en) * 1980-12-29 1984-01-17 Sprague Electric Company IC With protection against reversed power supply
JPH0685441B2 (ja) * 1986-06-18 1994-10-26 日産自動車株式会社 半導体装置
EP0305936A3 (de) * 1987-08-31 1991-03-27 National Semiconductor Corporation Verpolschutz für einen MOS-IC
US4857985A (en) * 1987-08-31 1989-08-15 National Semiconductor Corporation MOS IC reverse battery protection
US4980746A (en) * 1988-04-29 1990-12-25 Dallas Semiconductor Corporation Integrated circuit with improved battery protection
IT1227104B (it) * 1988-09-27 1991-03-15 Sgs Thomson Microelectronics Circuito integrato autoprotetto da inversioni di polarita' della batteria di alimentazione
GB8914554D0 (en) * 1989-06-24 1989-08-16 Lucas Ind Plc Semiconductor device

Also Published As

Publication number Publication date
KR100286842B1 (ko) 2001-04-16
JPH05129532A (ja) 1993-05-25
EP0512605B1 (de) 1997-07-09
DE69220722T2 (de) 1998-01-29
JPH06105785B2 (ja) 1994-12-21
US5151767A (en) 1992-09-29
EP0512605A1 (de) 1992-11-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee