DE69425305D1 - Vorrichtung zur Magnetron-Plasma-Aufstäube-Beschichtung und Verfahren zum Aufstäube-Beschichten eines Substrates - Google Patents

Vorrichtung zur Magnetron-Plasma-Aufstäube-Beschichtung und Verfahren zum Aufstäube-Beschichten eines Substrates

Info

Publication number
DE69425305D1
DE69425305D1 DE69425305T DE69425305T DE69425305D1 DE 69425305 D1 DE69425305 D1 DE 69425305D1 DE 69425305 T DE69425305 T DE 69425305T DE 69425305 T DE69425305 T DE 69425305T DE 69425305 D1 DE69425305 D1 DE 69425305D1
Authority
DE
Germany
Prior art keywords
plasma
target
sputter coating
sputtering
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69425305T
Other languages
English (en)
Other versions
DE69425305T2 (de
Inventor
Michael Dill
Mark Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69425305D1 publication Critical patent/DE69425305D1/de
Publication of DE69425305T2 publication Critical patent/DE69425305T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69425305T 1993-09-16 1994-09-16 Vorrichtung zur Magnetron-Plasma-Aufstäube-Beschichtung und Verfahren zum Aufstäube-Beschichten eines Substrates Expired - Fee Related DE69425305T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/122,263 US5496455A (en) 1993-09-16 1993-09-16 Sputtering using a plasma-shaping magnet ring

Publications (2)

Publication Number Publication Date
DE69425305D1 true DE69425305D1 (de) 2000-08-24
DE69425305T2 DE69425305T2 (de) 2001-01-04

Family

ID=22401668

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69425305T Expired - Fee Related DE69425305T2 (de) 1993-09-16 1994-09-16 Vorrichtung zur Magnetron-Plasma-Aufstäube-Beschichtung und Verfahren zum Aufstäube-Beschichten eines Substrates

Country Status (6)

Country Link
US (1) US5496455A (de)
EP (1) EP0644273B1 (de)
JP (1) JPH07173625A (de)
KR (1) KR100306956B1 (de)
AT (1) ATE194856T1 (de)
DE (1) DE69425305T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907220A (en) * 1996-03-13 1999-05-25 Applied Materials, Inc. Magnetron for low pressure full face erosion
US5795451A (en) * 1997-06-12 1998-08-18 Read-Rite Corporation Sputtering apparatus with a rotating magnet array
US5902461A (en) * 1997-09-03 1999-05-11 Applied Materials, Inc. Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma
US6179973B1 (en) 1999-01-05 2001-01-30 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US6254745B1 (en) * 1999-02-19 2001-07-03 Tokyo Electron Limited Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source
US10047430B2 (en) * 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6610184B2 (en) * 2001-11-14 2003-08-26 Applied Materials, Inc. Magnet array in conjunction with rotating magnetron for plasma sputtering
AU2001272643A1 (en) * 2000-07-27 2002-02-13 Stephen Robert Burgess Magnetron sputtering
TWI229138B (en) * 2001-06-12 2005-03-11 Unaxis Balzers Ag Magnetron-sputtering source
KR101312690B1 (ko) * 2001-11-14 2013-09-27 어플라이드 머티어리얼스, 인코포레이티드 스퍼터링 및 재스퍼터링을 위한 자기-이온화 및 유도 결합 플라즈마
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
WO2004088710A2 (en) * 2003-04-02 2004-10-14 Nkt Research & Innovation A/S Method and apparatus for gas plasma treatment with controlled extent of gas plasma, and use thereof
US8361283B2 (en) * 2005-07-28 2013-01-29 Seagate Technology Llc Method and apparatus for cleaning a target of a sputtering apparatus
FR2895208B1 (fr) * 2005-12-16 2008-06-27 Metal Process Sarl Procede de production de plasma par decharge capacitive associe a un plasma annexe a decharge distribuee, et systeme de mise en oeuvre associe
US20130146451A1 (en) * 2011-12-07 2013-06-13 Intermolecular, Inc. Magnetic Confinement and Directionally Driven Ionized Sputtered Films For Combinatorial Processing

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046660A (en) * 1975-12-29 1977-09-06 Bell Telephone Laboratories, Incorporated Sputter coating with charged particle flux control
US4404077A (en) * 1981-04-07 1983-09-13 Fournier Paul R Integrated sputtering apparatus and method
JPS6012426B2 (ja) * 1981-06-15 1985-04-01 ワ−ルドエンジニアリング株式会社 磁界圧着形マグネトロンスパッタリング装置
JPS6277460A (ja) * 1985-09-30 1987-04-09 Tokuda Seisakusho Ltd 放電電極
US4842707A (en) * 1986-06-23 1989-06-27 Oki Electric Industry Co., Ltd. Dry process apparatus
JP2537210B2 (ja) * 1986-09-18 1996-09-25 株式会社東芝 高密度プラズマの発生装置
US4853102A (en) * 1987-01-07 1989-08-01 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
JPH0689446B2 (ja) * 1988-12-19 1994-11-09 株式会社日立製作所 薄膜形成装置
DE4009151A1 (de) * 1990-03-22 1991-09-26 Leybold Ag Vorrichtung zum beschichten von substraten durch katodenzerstaeubung
US5182001A (en) * 1990-06-13 1993-01-26 Leybold Aktiengesellschaft Process for coating substrates by means of a magnetron cathode
DE4018914C1 (de) * 1990-06-13 1991-06-06 Leybold Ag, 6450 Hanau, De
DE4123274C2 (de) * 1991-07-13 1996-12-19 Leybold Ag Vorrichtung zum Beschichten von Bauteilen bzw. Formteilen durch Kathodenzerstäubung

Also Published As

Publication number Publication date
DE69425305T2 (de) 2001-01-04
EP0644273B1 (de) 2000-07-19
ATE194856T1 (de) 2000-08-15
US5496455A (en) 1996-03-05
KR100306956B1 (ko) 2001-12-01
EP0644273A1 (de) 1995-03-22
JPH07173625A (ja) 1995-07-11
KR950008717A (ko) 1995-04-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee