DE69414510D1 - Elektrostatisch abgeschirmte mikroelektronische Feldemissionsvorrichtung - Google Patents

Elektrostatisch abgeschirmte mikroelektronische Feldemissionsvorrichtung

Info

Publication number
DE69414510D1
DE69414510D1 DE69414510T DE69414510T DE69414510D1 DE 69414510 D1 DE69414510 D1 DE 69414510D1 DE 69414510 T DE69414510 T DE 69414510T DE 69414510 T DE69414510 T DE 69414510T DE 69414510 D1 DE69414510 D1 DE 69414510D1
Authority
DE
Germany
Prior art keywords
field emission
emission device
electrostatically shielded
microelectronic field
shielded microelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69414510T
Other languages
English (en)
Other versions
DE69414510T2 (de
Inventor
Huei-Pei Kuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE69414510D1 publication Critical patent/DE69414510D1/de
Application granted granted Critical
Publication of DE69414510T2 publication Critical patent/DE69414510T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/003—Arrangements for eliminating unwanted electromagnetic effects, e.g. demagnetisation arrangements, shielding coils

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69414510T 1993-09-20 1994-09-20 Elektrostatisch abgeschirmte mikroelektronische Feldemissionsvorrichtung Expired - Fee Related DE69414510T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/124,328 US5340997A (en) 1993-09-20 1993-09-20 Electrostatically shielded field emission microelectronic device

Publications (2)

Publication Number Publication Date
DE69414510D1 true DE69414510D1 (de) 1998-12-17
DE69414510T2 DE69414510T2 (de) 1999-04-01

Family

ID=22414223

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69414510T Expired - Fee Related DE69414510T2 (de) 1993-09-20 1994-09-20 Elektrostatisch abgeschirmte mikroelektronische Feldemissionsvorrichtung

Country Status (4)

Country Link
US (1) US5340997A (de)
EP (1) EP0644570B1 (de)
JP (1) JP3519800B2 (de)
DE (1) DE69414510T2 (de)

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JPH07111868B2 (ja) * 1993-04-13 1995-11-29 日本電気株式会社 電界放出冷陰極素子
US5545946A (en) * 1993-12-17 1996-08-13 Motorola Field emission display with getter in vacuum chamber
WO1996013849A1 (en) * 1994-10-31 1996-05-09 Amoco Corporation Field emitter device and source with multiple gate structure
JPH0982214A (ja) 1994-12-05 1997-03-28 Canon Inc 電子放出素子、電子源、及び画像形成装置
GB9626221D0 (en) 1996-12-18 1997-02-05 Smiths Industries Plc Diamond surfaces
US5780960A (en) * 1996-12-18 1998-07-14 Texas Instruments Incorporated Micro-machined field emission microtips
EP1086480B1 (de) 1998-06-11 2003-09-03 Petr Viscor Flacher elektronenemitter
KR20010004606A (ko) * 1999-06-29 2001-01-15 김영환 전계방출 표시소자 및 그의 제조방법
US6989631B2 (en) * 2001-06-08 2006-01-24 Sony Corporation Carbon cathode of a field emission display with in-laid isolation barrier and support
US6756730B2 (en) * 2001-06-08 2004-06-29 Sony Corporation Field emission display utilizing a cathode frame-type gate and anode with alignment method
US6682382B2 (en) * 2001-06-08 2004-01-27 Sony Corporation Method for making wires with a specific cross section for a field emission display
US7002290B2 (en) * 2001-06-08 2006-02-21 Sony Corporation Carbon cathode of a field emission display with integrated isolation barrier and support on substrate
US6624590B2 (en) * 2001-06-08 2003-09-23 Sony Corporation Method for driving a field emission display
US6663454B2 (en) * 2001-06-08 2003-12-16 Sony Corporation Method for aligning field emission display components
US6873118B2 (en) * 2002-04-16 2005-03-29 Sony Corporation Field emission cathode structure using perforated gate
US6791278B2 (en) * 2002-04-16 2004-09-14 Sony Corporation Field emission display using line cathode structure
US6747416B2 (en) * 2002-04-16 2004-06-08 Sony Corporation Field emission display with deflecting MEMS electrodes
US7012582B2 (en) * 2002-11-27 2006-03-14 Sony Corporation Spacer-less field emission display
US20040145299A1 (en) * 2003-01-24 2004-07-29 Sony Corporation Line patterned gate structure for a field emission display
US20040189552A1 (en) * 2003-03-31 2004-09-30 Sony Corporation Image display device incorporating driver circuits on active substrate to reduce interconnects
US7071629B2 (en) * 2003-03-31 2006-07-04 Sony Corporation Image display device incorporating driver circuits on active substrate and other methods to reduce interconnects
US20070274656A1 (en) * 2005-12-30 2007-11-29 Brist Gary A Printed circuit board waveguide
US20150170864A1 (en) * 2013-12-16 2015-06-18 Altera Corporation Three electrode circuit element

Family Cites Families (17)

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US4683399A (en) * 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
FR2568394B1 (fr) * 1984-07-27 1988-02-12 Commissariat Energie Atomique Dispositif de visualisation par cathodoluminescence excitee par emission de champ
US4987377A (en) * 1988-03-22 1991-01-22 The United States Of America As Represented By The Secretary Of The Navy Field emitter array integrated distributed amplifiers
US5173534A (en) * 1989-01-30 1992-12-22 Rohm And Haas Company Emulsion and latex paint containing multipurpose binder
US5012153A (en) * 1989-12-22 1991-04-30 Atkinson Gary M Split collector vacuum field effect transistor
JP2968014B2 (ja) * 1990-01-29 1999-10-25 三菱電機株式会社 微小真空管及びその製造方法
US5192240A (en) * 1990-02-22 1993-03-09 Seiko Epson Corporation Method of manufacturing a microelectronic vacuum device
JP2634295B2 (ja) * 1990-05-17 1997-07-23 双葉電子工業株式会社 電子放出素子
US5196767A (en) * 1991-01-04 1993-03-23 Optron Systems, Inc. Spatial light modulator assembly
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
US5075595A (en) * 1991-01-24 1991-12-24 Motorola, Inc. Field emission device with vertically integrated active control
EP0498254B1 (de) * 1991-01-28 1996-03-27 Sony Corporation Mikroelektronischer ballistischer Transistor und Verfahren zu seiner Herstellung
US5140219A (en) * 1991-02-28 1992-08-18 Motorola, Inc. Field emission display device employing an integral planar field emission control device
JP3235172B2 (ja) * 1991-05-13 2001-12-04 セイコーエプソン株式会社 電界電子放出装置
US5138237A (en) * 1991-08-20 1992-08-11 Motorola, Inc. Field emission electron device employing a modulatable diamond semiconductor emitter
US5191217A (en) * 1991-11-25 1993-03-02 Motorola, Inc. Method and apparatus for field emission device electrostatic electron beam focussing
US5210472A (en) * 1992-04-07 1993-05-11 Micron Technology, Inc. Flat panel display in which low-voltage row and column address signals control a much pixel activation voltage

Also Published As

Publication number Publication date
JPH0794105A (ja) 1995-04-07
EP0644570A2 (de) 1995-03-22
JP3519800B2 (ja) 2004-04-19
EP0644570B1 (de) 1998-11-11
US5340997A (en) 1994-08-23
EP0644570A3 (de) 1995-12-20
DE69414510T2 (de) 1999-04-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD CO. (N.D.GES.D.STAATES DELAWARE),

8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE

8339 Ceased/non-payment of the annual fee