DE69331709D1 - Feldeffekt-emissionsvorrichtung - Google Patents

Feldeffekt-emissionsvorrichtung

Info

Publication number
DE69331709D1
DE69331709D1 DE69331709T DE69331709T DE69331709D1 DE 69331709 D1 DE69331709 D1 DE 69331709D1 DE 69331709 T DE69331709 T DE 69331709T DE 69331709 T DE69331709 T DE 69331709T DE 69331709 D1 DE69331709 D1 DE 69331709D1
Authority
DE
Germany
Prior art keywords
field effect
emission device
effect emission
field
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69331709T
Other languages
English (en)
Inventor
Leonid Danilovic Karpov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from RU93003280A external-priority patent/RU2097869C1/ru
Priority claimed from RU93041195A external-priority patent/RU2089004C1/ru
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE69331709D1 publication Critical patent/DE69331709D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
DE69331709T 1993-01-19 1993-12-15 Feldeffekt-emissionsvorrichtung Expired - Lifetime DE69331709D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
RU93003280A RU2097869C1 (ru) 1993-01-19 1993-01-19 Вакуумный микротриод
RU93041195A RU2089004C1 (ru) 1993-08-13 1993-08-13 Вакуумный транзистор карпова
PCT/RU1993/000305 WO1994017546A1 (en) 1993-01-19 1993-12-15 Field-effect emitter device

Publications (1)

Publication Number Publication Date
DE69331709D1 true DE69331709D1 (de) 2002-04-18

Family

ID=26653736

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69331709T Expired - Lifetime DE69331709D1 (de) 1993-01-19 1993-12-15 Feldeffekt-emissionsvorrichtung

Country Status (7)

Country Link
US (2) US5965971A (de)
EP (1) EP0681311B1 (de)
JP (1) JPH08510588A (de)
KR (1) KR100307384B1 (de)
CA (1) CA2154245A1 (de)
DE (1) DE69331709D1 (de)
WO (1) WO1994017546A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69522465T2 (de) * 1994-10-31 2002-05-02 Honeywell Inc Feldemissionsanzeigevorrichtung
CN1183851A (zh) * 1995-05-08 1998-06-03 迈克尔·D·波特 场发射显示单元结构及其制造工艺
CA2221378A1 (en) * 1995-06-02 1996-12-05 Advanced Vision Technologies, Inc. Lateral-emitter field-emission device with simplified anode and fabrication thereof
RU2089001C1 (ru) * 1996-02-29 1997-08-27 Закрытое акционерное общество "Техно-ТМ" Источник электронов и способ его изготовления
US6262530B1 (en) 1997-02-25 2001-07-17 Ivan V. Prein Field emission devices with current stabilizer(s)
US5982082A (en) * 1997-05-06 1999-11-09 St. Clair Intellectual Property Consultants, Inc. Field emission display devices
TW403931B (en) * 1998-01-16 2000-09-01 Sony Corp Electron emitting apparatus, manufacturing method therefor and method of operating electron emitting apparatus
WO1999049492A1 (en) * 1998-03-21 1999-09-30 Korea Advanced Institute Of Science & Technology Line field emitter display
JP2000100315A (ja) * 1998-07-23 2000-04-07 Sony Corp 冷陰極電界電子放出素子及び冷陰極電界電子放出表示装置
US6593695B2 (en) 1999-01-14 2003-07-15 Northrop Grumman Corp. Broadband, inverted slot mode, coupled cavity circuit
US6445122B1 (en) * 2000-02-22 2002-09-03 Industrial Technology Research Institute Field emission display panel having cathode and anode on the same panel substrate
KR100658666B1 (ko) * 2001-02-16 2006-12-15 삼성에스디아이 주식회사 카본 나노튜브 에미터를 갖는 전계 방출 표시소자
US7129626B2 (en) * 2001-03-20 2006-10-31 Copytele, Inc. Pixel structure for an edge-emitter field-emission display
US6614149B2 (en) 2001-03-20 2003-09-02 Copytele, Inc. Field-emission matrix display based on lateral electron reflections
US6674242B2 (en) 2001-03-20 2004-01-06 Copytele, Inc. Field-emission matrix display based on electron reflections
US6541906B2 (en) * 2001-05-23 2003-04-01 Industrial Technology Research Institute Field emission display panel equipped with a dual-layer cathode and an anode on the same substrate and method for fabrication
US7274136B2 (en) * 2004-01-22 2007-09-25 Copytele, Inc. Hybrid active matrix thin-film transistor display
US7723908B2 (en) 2002-03-20 2010-05-25 Copytele, Inc. Flat panel display incorporating a control frame
US7728506B2 (en) * 2002-03-20 2010-06-01 Copytele, Inc. Low voltage phosphor with film electron emitters display device
US7804236B2 (en) * 2002-03-20 2010-09-28 Copytele, Inc. Flat panel display incorporating control frame
US7327080B2 (en) 2002-03-20 2008-02-05 Disanto Frank J Hybrid active matrix thin-film transistor display
BRPI0402052A (pt) * 2004-05-14 2006-01-03 Vitor Renaux Hering Disposição construtiva em displays de tela plana
TWI260669B (en) * 2005-07-26 2006-08-21 Ind Tech Res Inst Field emission light-emitting device
US8933864B1 (en) * 2007-10-19 2015-01-13 Copytele, Inc. Passive matrix phosphor based cold cathode display
US9711392B2 (en) * 2012-07-25 2017-07-18 Infineon Technologies Ag Field emission devices and methods of making thereof
US9089039B2 (en) * 2013-12-30 2015-07-21 Eugene J. Lauer Particle acceleration devices with improved geometries for vacuum-insulator-anode triple junctions
US9754756B2 (en) * 2015-11-23 2017-09-05 Stmicroelectronics S.R.L. Vacuum integrated electronic device and manufacturing process thereof

Family Cites Families (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
US3789471A (en) * 1970-02-06 1974-02-05 Stanford Research Inst Field emission cathode structures, devices utilizing such structures, and methods of producing such structures
US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
US3671798A (en) * 1970-12-11 1972-06-20 Nasa Method and apparatus for limiting field-emission current
US3840955A (en) * 1973-12-12 1974-10-15 J Hagood Method for producing a field effect control device
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
US4307507A (en) * 1980-09-10 1981-12-29 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing a field-emission cathode structure
US4728851A (en) * 1982-01-08 1988-03-01 Ford Motor Company Field emitter device with gated memory
US4638334A (en) * 1985-04-03 1987-01-20 Xerox Corporation Electro-optic line printer with super luminescent LED source
GB8621600D0 (en) * 1986-09-08 1987-03-18 Gen Electric Co Plc Vacuum devices
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
US4987377A (en) * 1988-03-22 1991-01-22 The United States Of America As Represented By The Secretary Of The Navy Field emitter array integrated distributed amplifiers
US4901028A (en) * 1988-03-22 1990-02-13 The United States Of America As Represented By The Secretary Of The Navy Field emitter array integrated distributed amplifiers
FR2634059B1 (fr) * 1988-07-08 1996-04-12 Thomson Csf Microcomposant electronique autoscelle sous vide, notamment diode, ou triode, et procede de fabrication correspondant
US5004956A (en) * 1988-08-23 1991-04-02 Westinghouse Electric Corp. Thin film electroluminescent edge emitter structure on a silcon substrate
US4956574A (en) * 1989-08-08 1990-09-11 Motorola, Inc. Switched anode field emission device
EP0500543A4 (en) * 1989-09-29 1992-11-19 Motorola, Inc. Flat panel display using field emission devices
US5055077A (en) * 1989-11-22 1991-10-08 Motorola, Inc. Cold cathode field emission device having an electrode in an encapsulating layer
DE69026353T2 (de) * 1989-12-19 1996-11-14 Matsushita Electric Ind Co Ltd Feldemissionsvorrichtung und Verfahren zur Herstellung derselben
US4964946A (en) * 1990-02-02 1990-10-23 The United States Of America As Represented By The Secretary Of The Navy Process for fabricating self-aligned field emitter arrays
US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
US5079476A (en) * 1990-02-09 1992-01-07 Motorola, Inc. Encapsulated field emission device
US5142184B1 (en) * 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
US5030921A (en) * 1990-02-09 1991-07-09 Motorola, Inc. Cascaded cold cathode field emission devices
US5214346A (en) * 1990-02-22 1993-05-25 Seiko Epson Corporation Microelectronic vacuum field emission device
US5192240A (en) * 1990-02-22 1993-03-09 Seiko Epson Corporation Method of manufacturing a microelectronic vacuum device
DE4010909A1 (de) * 1990-04-04 1991-10-10 Siemens Ag Diode
US5266155A (en) * 1990-06-08 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Method for making a symmetrical layered thin film edge field-emitter-array
US5214347A (en) * 1990-06-08 1993-05-25 The United States Of America As Represented By The Secretary Of The Navy Layered thin-edged field-emitter device
US5203731A (en) * 1990-07-18 1993-04-20 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
US5141459A (en) * 1990-07-18 1992-08-25 International Business Machines Corporation Structures and processes for fabricating field emission cathodes
US5148078A (en) * 1990-08-29 1992-09-15 Motorola, Inc. Field emission device employing a concentric post
US5030895A (en) * 1990-08-30 1991-07-09 The United States Of America As Represented By The Secretary Of The Navy Field emitter array comparator
US5157309A (en) * 1990-09-13 1992-10-20 Motorola Inc. Cold-cathode field emission device employing a current source means
US5150192A (en) * 1990-09-27 1992-09-22 The United States Of America As Represented By The Secretary Of The Navy Field emitter array
US5136764A (en) * 1990-09-27 1992-08-11 Motorola, Inc. Method for forming a field emission device
US5281890A (en) * 1990-10-30 1994-01-25 Motorola, Inc. Field emission device having a central anode
US5173634A (en) * 1990-11-30 1992-12-22 Motorola, Inc. Current regulated field-emission device
US5157304A (en) * 1990-12-17 1992-10-20 Motorola, Inc. Field emission device display with vacuum seal
US5112436A (en) * 1990-12-24 1992-05-12 Xerox Corporation Method of forming planar vacuum microelectronic devices with self aligned anode
ATE193156T1 (de) * 1990-12-28 2000-06-15 Canon Kk Bilderzeugungsgerät
US5075595A (en) * 1991-01-24 1991-12-24 Motorola, Inc. Field emission device with vertically integrated active control
KR950001249B1 (en) * 1991-02-01 1995-02-15 Fujitsu Ltd Field emission microcathode arrays
US5166709A (en) * 1991-02-06 1992-11-24 Delphax Systems Electron DC printer
FR2716571B1 (fr) * 1994-02-22 1996-05-03 Pixel Int Sa Procédé de fabrication de cathode d'écran fluorescent à micropointes et produit obtenu par ce procédé .
US5140219A (en) * 1991-02-28 1992-08-18 Motorola, Inc. Field emission display device employing an integral planar field emission control device
CA2060809A1 (en) * 1991-03-01 1992-09-02 Raytheon Company Electron emitting structure and manufacturing method
GB2259184B (en) 1991-03-06 1995-01-18 Sony Corp Flat image-display apparatus
GB2254486B (en) * 1991-03-06 1995-01-18 Sony Corp Flat image-display apparatus
US5142256A (en) * 1991-04-04 1992-08-25 Motorola, Inc. Pin diode with field emission device switch
US5252895A (en) * 1991-05-09 1993-10-12 Westinghouse Electric Corp. TFEL edge emitter structure with light emitting face at angle greater than ninety degrees to substrate street
JP3235172B2 (ja) * 1991-05-13 2001-12-04 セイコーエプソン株式会社 電界電子放出装置
US5301554A (en) * 1991-06-03 1994-04-12 Motorola, Inc. Differential pressure transducer
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
US5233263A (en) * 1991-06-27 1993-08-03 International Business Machines Corporation Lateral field emission devices
US5155420A (en) * 1991-08-05 1992-10-13 Smith Robert T Switching circuits employing field emission devices
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5141460A (en) * 1991-08-20 1992-08-25 Jaskie James E Method of making a field emission electron source employing a diamond coating
US5258685A (en) * 1991-08-20 1993-11-02 Motorola, Inc. Field emission electron source employing a diamond coating
US5138237A (en) * 1991-08-20 1992-08-11 Motorola, Inc. Field emission electron device employing a modulatable diamond semiconductor emitter
US5138397A (en) * 1991-09-06 1992-08-11 Xerox Corporation Park position control apparatus for a sheet transport system
US5382867A (en) * 1991-10-02 1995-01-17 Sharp Kabushiki Kaisha Field-emission type electronic device
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
US5536193A (en) * 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
JPH05182609A (ja) * 1991-12-27 1993-07-23 Sharp Corp 画像表示装置
US5173697A (en) * 1992-02-05 1992-12-22 Motorola, Inc. Digital-to-analog signal conversion device employing scaled field emission devices
US5180951A (en) * 1992-02-05 1993-01-19 Motorola, Inc. Electron device electron source including a polycrystalline diamond
US5290610A (en) * 1992-02-13 1994-03-01 Motorola, Inc. Forming a diamond material layer on an electron emitter using hydrocarbon reactant gases ionized by emitted electrons
US5543684A (en) * 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
KR950004516B1 (ko) * 1992-04-29 1995-05-01 삼성전관주식회사 필드 에미션 디스플레이와 그 제조방법
US5289086A (en) * 1992-05-04 1994-02-22 Motorola, Inc. Electron device employing a diamond film electron source
US5319233A (en) * 1992-05-13 1994-06-07 Motorola, Inc. Field emission device employing a layer of single-crystal silicon
US5278475A (en) * 1992-06-01 1994-01-11 Motorola, Inc. Cathodoluminescent display apparatus and method for realization using diamond crystallites
US5300862A (en) * 1992-06-11 1994-04-05 Motorola, Inc. Row activating method for fed cathodoluminescent display assembly
US5312777A (en) * 1992-09-25 1994-05-17 International Business Machines Corporation Fabrication methods for bidirectional field emission devices and storage structures
WO1994015244A1 (fr) * 1992-12-29 1994-07-07 Pixel International S.A. Espaceurs pour ecrans plats de visualisation et procedes de mise en ×uvre de ces espaceurs
US5313140A (en) * 1993-01-22 1994-05-17 Motorola, Inc. Field emission device with integral charge storage element and method for operation
US5320570A (en) * 1993-01-22 1994-06-14 Motorola, Inc. Method for realizing high frequency/speed field emission devices and apparatus
US5519414A (en) * 1993-02-19 1996-05-21 Off World Laboratories, Inc. Video display and driver apparatus and method
US5382185A (en) * 1993-03-31 1995-01-17 The United States Of America As Represented By The Secretary Of The Navy Thin-film edge field emitter device and method of manufacture therefor
US5445550A (en) * 1993-12-22 1995-08-29 Xie; Chenggang Lateral field emitter device and method of manufacturing same
FR2714764B1 (fr) * 1993-12-30 1996-03-29 Pixel Int Sa Procédé de positionnement et pose de billes entretoises pour écrans plats tels que écrans fluorescents à micropointes, et équipement associé à ce procédé.
FR2718285B1 (fr) * 1994-03-31 1996-06-21 Pixel Int Sa Procédé de fabrication de tubes à vide plats sans queusot, et produits obtenus par ce procédé.
US5612728A (en) * 1994-05-20 1997-03-18 Westinghouse Electric Corporation Full color TFEL edge emitter printing system
US5453659A (en) * 1994-06-10 1995-09-26 Texas Instruments Incorporated Anode plate for flat panel display having integrated getter
US5525857A (en) * 1994-08-19 1996-06-11 Texas Instruments Inc. Low density, high porosity material as gate dielectric for field emission device
US5629580A (en) * 1994-10-28 1997-05-13 International Business Machines Corporation Lateral field emission devices for display elements and methods of fabrication
US5458520A (en) * 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
US5578896A (en) * 1995-04-10 1996-11-26 Industrial Technology Research Institute Cold cathode field emission display and method for forming it
US5630741A (en) * 1995-05-08 1997-05-20 Advanced Vision Technologies, Inc. Fabrication process for a field emission display cell structure
US5644188A (en) * 1995-05-08 1997-07-01 Advanced Vision Technologies, Inc. Field emission display cell structure
US5618216C1 (en) * 1995-06-02 2001-06-26 Advanced Vision Tech Inc Fabrication process for lateral-emitter field-emission device with simplified anode
US5604399A (en) * 1995-06-06 1997-02-18 International Business Machines Corporation Optimal gate control design and fabrication method for lateral field emission devices
US5647998A (en) * 1995-06-13 1997-07-15 Advanced Vision Technologies, Inc. Fabrication process for laminar composite lateral field-emission cathode
US5703380A (en) * 1995-06-13 1997-12-30 Advanced Vision Technologies Inc. Laminar composite lateral field-emission cathode
US5644190A (en) * 1995-07-05 1997-07-01 Advanced Vision Technologies, Inc. Direct electron injection field-emission display device
US5616061A (en) * 1995-07-05 1997-04-01 Advanced Vision Technologies, Inc. Fabrication process for direct electron injection field-emission display device
US5628663A (en) * 1995-09-06 1997-05-13 Advanced Vision Technologies, Inc. Fabrication process for high-frequency field-emission device
US5666019A (en) * 1995-09-06 1997-09-09 Advanced Vision Technologies, Inc. High-frequency field-emission device
US5614785A (en) * 1995-09-28 1997-03-25 Texas Instruments Incorporated Anode plate for flat panel display having silicon getter
US5669802A (en) * 1995-10-30 1997-09-23 Advanced Vision Technologies, Inc. Fabrication process for dual carrier display device

Also Published As

Publication number Publication date
JPH08510588A (ja) 1996-11-05
EP0681311A4 (de) 1996-12-16
KR100307384B1 (ko) 2001-12-17
US6023126A (en) 2000-02-08
KR960700515A (ko) 1996-01-20
WO1994017546A1 (en) 1994-08-04
CA2154245A1 (en) 1994-08-04
EP0681311B1 (de) 2002-03-13
US5965971A (en) 1999-10-12
EP0681311A1 (de) 1995-11-08

Similar Documents

Publication Publication Date Title
DE69331709D1 (de) Feldeffekt-emissionsvorrichtung
NO961757D0 (no) Vacuumlöfte-anordning
DE69432435D1 (de) Setzgeräte
DE69402218D1 (de) Werbevorrichtung
DE69407453D1 (de) Blendenvorrichtung
DE69431099D1 (de) Pipettenreinigungseinheit
DE69407927T2 (de) Feldemissionskathodenvorrichtung
DE69405529D1 (de) Feldemissionselektronenvorrichtung
NO933753D0 (no) Roer-reperasjonsanordning
IT1261545B (it) Dispositivo singolarizzatore
DE69401838T2 (de) Abgasreinigungsvorrichtung
DE59402256D1 (de) Kuvertiervorrichtung
DE69406109T2 (de) Luftführungseinrichtung
DE9303814U1 (de) Auftragungsvorrichtung
KR950010962U (ko) 티이업장치
KR950005513U (ko) 쿳션장치
DE9407217U1 (de) Kombigerät
DE69322005D1 (de) Einkristalline Feldemissionsvorrichtung
DE69522465T2 (de) Feldemissionsanzeigevorrichtung
DE9308571U1 (de) Tragvorrichtung
DE59404785D1 (de) Abwehr-einrichtung
SE9201378D0 (sv) En roerelsebegraensande anordning
DE9314206U1 (de) Hub-Drehtisch-Vorrichtung
NO932560D0 (no) Verktoey-enhet
SE9303813D0 (sv) Anordning

Legal Events

Date Code Title Description
8332 No legal effect for de