DE69410765T2 - Elektrostatische Halteplatte mit Schutzring - Google Patents

Elektrostatische Halteplatte mit Schutzring

Info

Publication number
DE69410765T2
DE69410765T2 DE69410765T DE69410765T DE69410765T2 DE 69410765 T2 DE69410765 T2 DE 69410765T2 DE 69410765 T DE69410765 T DE 69410765T DE 69410765 T DE69410765 T DE 69410765T DE 69410765 T2 DE69410765 T2 DE 69410765T2
Authority
DE
Germany
Prior art keywords
holding plate
protective ring
electrostatic holding
electrostatic
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69410765T
Other languages
English (en)
Other versions
DE69410765D1 (de
Inventor
Michael Scott Barnes
Joseph Skinner Logan
Jr Robert Peter Westerfield
John Howard Keller
Robert Eli Tompkins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DOREEY GAGE CO.INC., POUGHKEEPSIE, N.Y., US
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69410765D1 publication Critical patent/DE69410765D1/de
Application granted granted Critical
Publication of DE69410765T2 publication Critical patent/DE69410765T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
DE69410765T 1993-12-20 1994-11-24 Elektrostatische Halteplatte mit Schutzring Expired - Lifetime DE69410765T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/169,932 US5463525A (en) 1993-12-20 1993-12-20 Guard ring electrostatic chuck

Publications (2)

Publication Number Publication Date
DE69410765D1 DE69410765D1 (de) 1998-07-09
DE69410765T2 true DE69410765T2 (de) 1999-02-18

Family

ID=22617811

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69410765T Expired - Lifetime DE69410765T2 (de) 1993-12-20 1994-11-24 Elektrostatische Halteplatte mit Schutzring

Country Status (4)

Country Link
US (3) US5463525A (de)
EP (1) EP0660499B1 (de)
JP (1) JP2610112B2 (de)
DE (1) DE69410765T2 (de)

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US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
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US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
TW293231B (de) * 1994-04-27 1996-12-11 Aneruba Kk
US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US6042686A (en) * 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
JP3457477B2 (ja) * 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
US5835333A (en) * 1995-10-30 1998-11-10 Lam Research Corporation Negative offset bipolar electrostatic chucks
US5812361A (en) * 1996-03-29 1998-09-22 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
US5858099A (en) 1996-04-09 1999-01-12 Sarnoff Corporation Electrostatic chucks and a particle deposition apparatus therefor
AU738275B2 (en) * 1996-04-09 2001-09-13 Delsys Pharmaceutical Corporation Electrostatic chucks
US5788814A (en) * 1996-04-09 1998-08-04 David Sarnoff Research Center Chucks and methods for positioning multiple objects on a substrate
US5846595A (en) * 1996-04-09 1998-12-08 Sarnoff Corporation Method of making pharmaceutical using electrostatic chuck
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US5737175A (en) * 1996-06-19 1998-04-07 Lam Research Corporation Bias-tracking D.C. power circuit for an electrostatic chuck
US6170428B1 (en) * 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US6175485B1 (en) 1996-07-19 2001-01-16 Applied Materials, Inc. Electrostatic chuck and method for fabricating the same
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
US5904779A (en) * 1996-12-19 1999-05-18 Lam Research Corporation Wafer electrical discharge control by wafer lifter system
US6132517A (en) * 1997-02-21 2000-10-17 Applied Materials, Inc. Multiple substrate processing apparatus for enhanced throughput
US5835335A (en) * 1997-03-26 1998-11-10 Lam Research Corporation Unbalanced bipolar electrostatic chuck power supplies and methods thereof
US6286451B1 (en) 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US5894400A (en) * 1997-05-29 1999-04-13 Wj Semiconductor Equipment Group, Inc. Method and apparatus for clamping a substrate
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
US6033482A (en) * 1998-04-10 2000-03-07 Applied Materials, Inc. Method for igniting a plasma in a plasma processing chamber
US6063194A (en) 1998-06-10 2000-05-16 Delsys Pharmaceutical Corporation Dry powder deposition apparatus
US6149774A (en) 1998-06-10 2000-11-21 Delsys Pharmaceutical Corporation AC waveforms biasing for bead manipulating chucks
US6790375B1 (en) 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US6188564B1 (en) * 1999-03-31 2001-02-13 Lam Research Corporation Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber
US6923979B2 (en) * 1999-04-27 2005-08-02 Microdose Technologies, Inc. Method for depositing particles onto a substrate using an alternating electric field
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6257168B1 (en) * 1999-06-30 2001-07-10 Lam Research Corporation Elevated stationary uniformity ring design
DE10050413A1 (de) * 1999-10-14 2001-04-19 Schlumberger Technologies Inc Elektrostatische Spannvorrichtung
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
KR100502268B1 (ko) * 2000-03-01 2005-07-22 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 방법
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US6853141B2 (en) 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6494958B1 (en) 2000-06-29 2002-12-17 Applied Materials Inc. Plasma chamber support with coupled electrode
TW557532B (en) * 2000-07-25 2003-10-11 Applied Materials Inc Heated substrate support assembly and method
US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
TW478026B (en) * 2000-08-25 2002-03-01 Hitachi Ltd Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield
TW519716B (en) * 2000-12-19 2003-02-01 Tokyo Electron Ltd Wafer bias drive for a plasma source
DE10152101A1 (de) * 2001-10-23 2003-05-22 Infineon Technologies Ag Elektrostatische Wafer-Haltevorrichtung
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US20040027781A1 (en) * 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
US20040079289A1 (en) * 2002-10-23 2004-04-29 Kellerman Peter L. Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging
US6944006B2 (en) * 2003-04-03 2005-09-13 Applied Materials, Inc. Guard for electrostatic chuck
US7795153B2 (en) 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7470626B2 (en) 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7901952B2 (en) 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7452824B2 (en) 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7247218B2 (en) 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
WO2004112123A1 (ja) 2003-06-17 2004-12-23 Creative Technology Corporation 双極型静電チャック
KR100512745B1 (ko) * 2003-07-24 2005-09-07 삼성전자주식회사 정전기 척
JP4636807B2 (ja) * 2004-03-18 2011-02-23 キヤノン株式会社 基板保持装置およびそれを用いた露光装置
FR2875054B1 (fr) * 2004-09-08 2006-12-01 Cit Alcatel Support de substrats minces
US7359177B2 (en) * 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
US7837825B2 (en) 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
US8336891B2 (en) * 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
US8139340B2 (en) * 2009-01-20 2012-03-20 Plasma-Therm Llc Conductive seal ring electrostatic chuck
TW201334213A (zh) * 2011-11-01 2013-08-16 Intevac Inc 處理太陽能電池晶圓的靜電吸盤
US20140265165A1 (en) * 2013-03-14 2014-09-18 International Business Machines Corporation Wafer-to-wafer fusion bonding chuck
CN113948359B (zh) * 2020-07-17 2024-04-19 中国科学院微电子研究所 静电吸盘及半导体工艺设备

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US5103367A (en) * 1987-05-06 1992-04-07 Unisearch Limited Electrostatic chuck using A.C. field excitation
JPH0437125A (ja) * 1990-06-01 1992-02-07 Fujitsu Ltd ドライエッチング装置
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US5184398A (en) * 1991-08-30 1993-02-09 Texas Instruments Incorporated In-situ real-time sheet resistance measurement method
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US5535507A (en) * 1993-12-20 1996-07-16 International Business Machines Corporation Method of making electrostatic chuck with oxide insulator
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
US5467249A (en) * 1993-12-20 1995-11-14 International Business Machines Corporation Electrostatic chuck with reference electrode

Also Published As

Publication number Publication date
US5612851A (en) 1997-03-18
JP2610112B2 (ja) 1997-05-14
EP0660499A1 (de) 1995-06-28
JPH07201959A (ja) 1995-08-04
EP0660499B1 (de) 1998-06-03
DE69410765D1 (de) 1998-07-09
USRE37580E1 (en) 2002-03-12
US5463525A (en) 1995-10-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: DOREEY GAGE CO.INC., POUGHKEEPSIE, N.Y., US

8328 Change in the person/name/address of the agent

Free format text: SCHWAN SCHWAN SCHORER, 81739 MUENCHEN