DE69405546T2 - Lineare mikrowellenquelle zur plasmabehandlung von flächen. - Google Patents

Lineare mikrowellenquelle zur plasmabehandlung von flächen.

Info

Publication number
DE69405546T2
DE69405546T2 DE69405546T DE69405546T DE69405546T2 DE 69405546 T2 DE69405546 T2 DE 69405546T2 DE 69405546 T DE69405546 T DE 69405546T DE 69405546 T DE69405546 T DE 69405546T DE 69405546 T2 DE69405546 T2 DE 69405546T2
Authority
DE
Germany
Prior art keywords
plasma treatment
microwave source
linear microwave
linear
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69405546T
Other languages
English (en)
Other versions
DE69405546D1 (de
Inventor
Georges Briffod
Trong Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69405546D1 publication Critical patent/DE69405546D1/de
Publication of DE69405546T2 publication Critical patent/DE69405546T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
    • H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
DE69405546T 1993-02-18 1994-02-17 Lineare mikrowellenquelle zur plasmabehandlung von flächen. Expired - Fee Related DE69405546T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9301847A FR2701797B1 (fr) 1993-02-18 1993-02-18 Coupleur de transfert d'une puissance micro-onde vers une nappe de plasma et source micro-onde linéaire pour le traitement de surfaces par plasma .
PCT/FR1994/000179 WO1994019921A1 (fr) 1993-02-18 1994-02-17 Source micro-onde lineaire pour le traitement de surfaces par plasma

Publications (2)

Publication Number Publication Date
DE69405546D1 DE69405546D1 (de) 1997-10-16
DE69405546T2 true DE69405546T2 (de) 1998-03-19

Family

ID=9444184

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69405546T Expired - Fee Related DE69405546T2 (de) 1993-02-18 1994-02-17 Lineare mikrowellenquelle zur plasmabehandlung von flächen.

Country Status (6)

Country Link
US (1) US5726412A (de)
EP (1) EP0685143B1 (de)
JP (1) JPH08506924A (de)
DE (1) DE69405546T2 (de)
FR (1) FR2701797B1 (de)
WO (1) WO1994019921A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW285746B (de) * 1994-10-26 1996-09-11 Matsushita Electric Ind Co Ltd
JP3944946B2 (ja) * 1997-04-25 2007-07-18 株式会社島津製作所 薄膜形成装置
FR2774251B1 (fr) * 1998-01-26 2000-02-25 Commissariat Energie Atomique Source a plasma micro-onde lineaire en aimants permanents
FR2779317B1 (fr) * 1998-05-26 2000-08-18 Pantechnik Procede de modulation de la configuration d'un champ magnetique
DE19918790A1 (de) * 1999-04-26 2000-11-02 Aurion Anlagentechnik Gmbh Hochfrequenz-Anpassung mit Helikon-Wellen
US6291030B1 (en) * 1999-12-21 2001-09-18 Promos Technologies, Inc. Method for reducing capacitance in metal lines using air gaps
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
EP1554412B1 (de) * 2002-09-19 2013-08-14 General Plasma, Inc. Plasmaunterstützte chemische Gasphasenabscheidung Vorrichtung
US6969819B1 (en) * 2004-05-18 2005-11-29 The Esab Group, Inc. Plasma arc torch
US20080315689A1 (en) * 2007-06-15 2008-12-25 Dmirty Medvedev Ultra short high voltage pulse generator based on single or double spark gap
FR2947378A1 (fr) * 2009-06-29 2010-12-31 Quertech Ingenierie Systeme magnetique formant des surfaces iso modules fermees a partir de structures magnetiques de type "cusp" et sources d'ions de type rce mettant en oeuvre un tel systeme
JP5903429B2 (ja) * 2010-04-30 2016-04-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 縦型インラインｃｖｄシステム
DE102011075480A1 (de) * 2011-05-09 2012-11-15 Siemens Ag HF-Generator
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
TWI801058B (zh) * 2021-12-23 2023-05-01 明遠精密科技股份有限公司 一種複合式電漿源及其運作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110595A (en) * 1975-06-19 1978-08-29 The United States Of America As Represented By The United States Department Of Energy High-frequency plasma-heating apparatus
JPS6113634A (ja) * 1984-06-29 1986-01-21 Hitachi Ltd プラズマ処理装置
JPS62140339A (ja) * 1985-12-16 1987-06-23 Hitachi Ltd マイクロ波イオン源
FR2601498B1 (fr) * 1986-07-10 1988-10-07 Commissariat Energie Atomique Source d'ions a resonance cyclotronique electronique
US5022977A (en) * 1986-09-29 1991-06-11 Nippon Telegraph And Telephone Corporation Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus
US4767931A (en) * 1986-12-17 1988-08-30 Hitachi, Ltd. Ion beam apparatus
JPH07120648B2 (ja) * 1987-01-12 1995-12-20 日本真空技術株式会社 マイクロ波プラズマ処理装置
EP0275965B1 (de) * 1987-01-19 1995-05-31 Hitachi, Ltd. Mit einem Plasma arbeitendes Gerät
JPH01254245A (ja) * 1988-03-31 1989-10-11 Anelva Corp マイクロ波プラズマ処理装置
JPH03111577A (ja) * 1989-09-26 1991-05-13 Idemitsu Petrochem Co Ltd マイクロ波プラズマ発生装置およびそれを利用するダイヤモンド膜の製造方法
DE69204670T2 (de) * 1991-05-21 1996-04-18 Materials Research Corp Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit.
US5196812A (en) * 1991-06-27 1993-03-23 Hughes Aircraft Company Compact n-way waveguide power divider
US5198725A (en) * 1991-07-12 1993-03-30 Lam Research Corporation Method of producing flat ecr layer in microwave plasma device and apparatus therefor
US5302266A (en) * 1992-03-20 1994-04-12 International Business Machines Corporation Method and apparatus for filing high aspect patterns with metal
JPH06224154A (ja) * 1993-01-25 1994-08-12 Mitsubishi Electric Corp プラズマ処理装置

Also Published As

Publication number Publication date
FR2701797A1 (fr) 1994-08-26
EP0685143A1 (de) 1995-12-06
DE69405546D1 (de) 1997-10-16
FR2701797B1 (fr) 1995-03-31
EP0685143B1 (de) 1997-09-10
US5726412A (en) 1998-03-10
WO1994019921A1 (fr) 1994-09-01
JPH08506924A (ja) 1996-07-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee