DE69401863T2 - Verbesserte Suszeptor Ausführung - Google Patents

Verbesserte Suszeptor Ausführung

Info

Publication number
DE69401863T2
DE69401863T2 DE69401863T DE69401863T DE69401863T2 DE 69401863 T2 DE69401863 T2 DE 69401863T2 DE 69401863 T DE69401863 T DE 69401863T DE 69401863 T DE69401863 T DE 69401863T DE 69401863 T2 DE69401863 T2 DE 69401863T2
Authority
DE
Germany
Prior art keywords
susceptor
substrate
gas
pocket
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69401863T
Other languages
German (de)
English (en)
Other versions
DE69401863D1 (de
Inventor
Israel Beinglass
Christian M Gronet
Gary E Miner
Mahalingam Venkatesan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69401863D1 publication Critical patent/DE69401863D1/de
Publication of DE69401863T2 publication Critical patent/DE69401863T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P72/7611—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H10P72/7614—
    • H10P72/7624—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE69401863T 1993-07-15 1994-07-04 Verbesserte Suszeptor Ausführung Expired - Fee Related DE69401863T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9343193A 1993-07-15 1993-07-15

Publications (2)

Publication Number Publication Date
DE69401863D1 DE69401863D1 (de) 1997-04-10
DE69401863T2 true DE69401863T2 (de) 1997-07-03

Family

ID=22238916

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401863T Expired - Fee Related DE69401863T2 (de) 1993-07-15 1994-07-04 Verbesserte Suszeptor Ausführung

Country Status (3)

Country Link
EP (1) EP0634786B1 (OSRAM)
JP (1) JPH07161802A (OSRAM)
DE (1) DE69401863T2 (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476548A (en) * 1994-06-20 1995-12-19 Applied Materials, Inc. Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring
EP0742579A2 (en) * 1995-05-11 1996-11-13 Applied Materials, Inc. A method and apparatus for concentrating plasma on a substrate surface during processing
JP3109508B2 (ja) 1999-03-24 2000-11-20 日本電気株式会社 薄膜形成装置
US8372203B2 (en) * 2005-09-30 2013-02-12 Applied Materials, Inc. Apparatus temperature control and pattern compensation
KR100709841B1 (ko) * 2005-11-03 2007-04-23 삼성에스디아이 주식회사 전지 팩
US9682398B2 (en) * 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
JP5535347B1 (ja) * 2013-02-04 2014-07-02 エピクルー株式会社 撮像装置、半導体製造装置および半導体製造方法
TWI734668B (zh) * 2014-06-23 2021-08-01 美商應用材料股份有限公司 在ｅｐｉ腔室中的基材熱控制
TWI718575B (zh) * 2019-06-27 2021-02-11 旭暉應用材料股份有限公司 金屬遮罩

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3968885A (en) * 1973-06-29 1976-07-13 International Business Machines Corporation Method and apparatus for handling workpieces
DE3789212T2 (de) * 1986-12-19 1994-06-01 Applied Materials Inc Integriertes Bearbeitungssystem mit Vielfachkammer.
FR2661039B1 (fr) * 1990-04-12 1997-04-30 Commissariat Energie Atomique Porte-substrat electrostatique.
US5186238A (en) * 1991-04-25 1993-02-16 International Business Machines Corporation Liquid film interface cooling chuck for semiconductor wafer processing
US5199483A (en) * 1991-05-15 1993-04-06 Applied Materials, Inc. Method and apparatus for cooling wafers

Also Published As

Publication number Publication date
EP0634786B1 (en) 1997-03-05
JPH07161802A (ja) 1995-06-23
EP0634786A3 (OSRAM) 1995-02-01
DE69401863D1 (de) 1997-04-10
EP0634786A2 (en) 1995-01-18

Similar Documents

Publication Publication Date Title
DE69404397T2 (de) Verbesserte Suszeptor Ausführung
DE69331659T2 (de) Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung
DE69528217T2 (de) Vorrichtung und Verfahren zur Bearbeitung von Substraten
DE3722944C2 (de) Vorrichtung zur chemischen Dampfabscheidung und ihre Verwendung
DE69117824T2 (de) Vorrichtung und Verfahren zum Substratschutz während Substratbearbeitung
DE69206808T2 (de) Verfahren zur herstellung von titannitridfilmen mit geringem spezifischem widerstand
DE112010004736B4 (de) Aufnahmefür cvd und verfahren zur herstellung eines films unterverwendung derselben
DE69426679T2 (de) Vorrichtung und Verfahren zur Sicherstellung der Hitzeübertragung auf BZW von einem ganzen Substrat während der Bearbeitung eines Halbleiterbauteils
DE69006839T2 (de) Flächenselektive chemische Dampfphasenausscheidung.
DE112018001223B4 (de) Epitaxialwachstumsvorrichtung, Vorwärmring und Verfahren zum Herstellen von Epitaxialwafern unter Verwendung dieser
DE69529325T2 (de) Kontrolle von Kantenniederschlag auf Halbleitersubstrate
DE3751756T2 (de) Verfahren zum Abscheiden aus der Gasphase
DE60022221T2 (de) Apparat für die bearbeitung von halbleitern
US4395438A (en) Low pressure chemical vapor deposition of silicon nitride films
DE60127252T2 (de) Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo
DE60123813T2 (de) Sperrschicht für glasartige werkstoffe
DE69806281T2 (de) Verfahren und Vorrichtung zum Herstellen laminierter dünnen Schichten
DE69118085T2 (de) Differentialdruck-Haltungssystem für CVD-Anlage
DE69032189T2 (de) Peripherieabdichtung für Halbleiterplättchen und verfahren zu deren Verwendung
DE112010003694B4 (de) Verfahren und Vorrichtung zur Herstellung eines Epitaxialwafers
DE69415729T2 (de) Verfahren zur Begrenzung des Haftens eines Körpers am Träger bei einer Abscheidungs-Behandlung
DE112012000726B4 (de) Suszeptor und Verfahren zum Herstellen eines Epitaxialwafers unter Verwendung desselben
DE69401863T2 (de) Verbesserte Suszeptor Ausführung
DE69119989T2 (de) CVD-Anlage und Verfahren zum Herstellen geglühter Filme
DE69710655T2 (de) Gaseinleitsystem für CVD Reaktoren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee