DE69331532T2 - Verfahren zur Herstellung eines pyroelektrischen Infrarot-Detektors - Google Patents

Verfahren zur Herstellung eines pyroelektrischen Infrarot-Detektors

Info

Publication number
DE69331532T2
DE69331532T2 DE69331532T DE69331532T DE69331532T2 DE 69331532 T2 DE69331532 T2 DE 69331532T2 DE 69331532 T DE69331532 T DE 69331532T DE 69331532 T DE69331532 T DE 69331532T DE 69331532 T2 DE69331532 T2 DE 69331532T2
Authority
DE
Germany
Prior art keywords
manufacture
infrared detector
pyroelectric infrared
pyroelectric
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69331532T
Other languages
English (en)
Other versions
DE69331532D1 (de
Inventor
Satoru Fujii
Ryoichi Takayama
Yoshihiro Tomita
Masayuki Okano
Hideo Torii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69331532D1 publication Critical patent/DE69331532D1/de
Application granted granted Critical
Publication of DE69331532T2 publication Critical patent/DE69331532T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Thermoelectric active materials
DE69331532T 1992-11-04 1993-10-20 Verfahren zur Herstellung eines pyroelektrischen Infrarot-Detektors Expired - Fee Related DE69331532T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29481192 1992-11-04
JP5194493 1993-03-12

Publications (2)

Publication Number Publication Date
DE69331532D1 DE69331532D1 (de) 2002-03-14
DE69331532T2 true DE69331532T2 (de) 2002-07-11

Family

ID=26392530

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69316319T Expired - Fee Related DE69316319T2 (de) 1992-11-04 1993-10-20 Verfahren zur Herstellung eines pyroelektrischen Infrarot-Detektors
DE69331532T Expired - Fee Related DE69331532T2 (de) 1992-11-04 1993-10-20 Verfahren zur Herstellung eines pyroelektrischen Infrarot-Detektors

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69316319T Expired - Fee Related DE69316319T2 (de) 1992-11-04 1993-10-20 Verfahren zur Herstellung eines pyroelektrischen Infrarot-Detektors

Country Status (4)

Country Link
US (2) US5413667A (de)
EP (2) EP0764990B1 (de)
JP (1) JP3094753B2 (de)
DE (2) DE69316319T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013209541A1 (de) * 2013-05-23 2014-11-27 Siemens Aktiengesellschaft Sensorelementanordnung und Verfahren zum Herstellen einer Sensorelementanordnung

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5471060A (en) * 1993-08-23 1995-11-28 Matsushita Electric Industrial Co., Ltd. Pyroelectric infrared radiation detector and method of producing the same
US5612536A (en) * 1994-02-07 1997-03-18 Matsushita Electric Industrial Co., Ltd. Thin film sensor element and method of manufacturing the same
US5558905A (en) * 1994-03-08 1996-09-24 The United States Of America As Represented By The Secretary Of The Army Method of making a pyroelectric film sensing device
KR100229608B1 (ko) * 1995-10-06 1999-11-15 모리시타 요이찌 유전체소자의 제조방법
US6020216A (en) * 1996-08-30 2000-02-01 Texas Instruments Incorporated Thermal detector with stress-aligned thermally sensitive element and method
JP3831524B2 (ja) * 1998-06-26 2006-10-11 株式会社堀場製作所 赤外線ガス分析計用流量検出素子とその製造方法
US6710538B1 (en) 1998-08-26 2004-03-23 Micron Technology, Inc. Field emission display having reduced power requirements and method
US6495828B1 (en) * 2000-04-17 2002-12-17 The United States Of America As Represented By The Secretary Of The Army Ferroelectric/pyroelectric infrared detector with a colossal magneto-resistive electrode material and rock salt structure as a removable substrate
EP1178545A1 (de) * 2000-08-04 2002-02-06 Ecole Polytechnique Federale De Lausanne Herstellung eines pyroelektrischen Sensors mit einer pyroelektrischen Dünnschicht die polarisiert werden muss
DE10103528B4 (de) * 2001-01-26 2004-01-15 Siemens Ag Verfahren zur Herstellung und Verwendung eines ferroelektrischen Kondensators
DE10103529B4 (de) * 2001-01-26 2004-01-15 Siemens Ag Ferroelektrischer Kondensator, Verfahren zur Herstellung und Verwendung des Kondensators
FR2835534B1 (fr) * 2002-02-06 2004-12-24 Saint Gobain CIBLE CERAMIQUE NiOx NON STOECHIOMETRIQUE
CN113503977A (zh) * 2021-07-26 2021-10-15 成都优蕊光电科技有限公司 一种带有隔热结构的线列型热释电红外探测器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110794B1 (de) * 1971-03-19 1976-04-06
JPS57104380A (en) * 1980-12-19 1982-06-29 New Japan Radio Co Ltd Infrared ray solid-state image pickup device
JPS58187822A (ja) * 1982-04-27 1983-11-02 Matsushita Electric Ind Co Ltd 焦電形赤外線検出素子
US4532424A (en) * 1983-04-25 1985-07-30 Rockwell International Corporation Pyroelectric thermal detector array
JPH0752124B2 (ja) * 1985-06-26 1995-06-05 松下電器産業株式会社 赤外線検出素子
JPS6246217A (ja) * 1985-08-24 1987-02-28 Matsushita Electric Ind Co Ltd 焦電型赤外撮像素子
JPH0685450B2 (ja) * 1986-01-13 1994-10-26 松下電器産業株式会社 強誘電体薄膜素子
JPH0672800B2 (ja) * 1986-03-12 1994-09-14 松下電器産業株式会社 焦電型赤外線センサ
JPS6413524A (en) * 1987-07-08 1989-01-18 Mitsubishi Electric Corp Liquid crystal display device
JPH01136035A (ja) * 1987-11-24 1989-05-29 Hamamatsu Photonics Kk 焦電型検出素子の製造方法
GB2236900A (en) * 1989-09-13 1991-04-17 Philips Electronic Associated Thermal-radiation detectors with polymer film element(s)
JP2584124B2 (ja) * 1990-11-01 1997-02-19 松下電器産業株式会社 焦電型赤外線検出器およびその製造方法
EP0611443B1 (de) * 1991-11-04 1996-05-29 Honeywell Inc. Dunnfilmpyroelektrische bildmatrix
JP2594859B2 (ja) * 1991-12-27 1997-03-26 川崎重工業株式会社 機能性薄膜を用いた電子デバイス
US5264375A (en) * 1992-04-15 1993-11-23 Massachusetts Institute Of Technology Superconducting detector and method of making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013209541A1 (de) * 2013-05-23 2014-11-27 Siemens Aktiengesellschaft Sensorelementanordnung und Verfahren zum Herstellen einer Sensorelementanordnung

Also Published As

Publication number Publication date
US5413667A (en) 1995-05-09
JP3094753B2 (ja) 2000-10-03
US5483067A (en) 1996-01-09
JPH06317465A (ja) 1994-11-15
DE69316319D1 (de) 1998-02-19
EP0596329B1 (de) 1998-01-14
EP0764990A1 (de) 1997-03-26
EP0596329A1 (de) 1994-05-11
EP0764990B1 (de) 2002-01-30
DE69331532D1 (de) 2002-03-14
DE69316319T2 (de) 1998-05-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee