DE69329545D1 - Halbleitervorrichtung für Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Halbleitervorrichtung für Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69329545D1
DE69329545D1 DE69329545T DE69329545T DE69329545D1 DE 69329545 D1 DE69329545 D1 DE 69329545D1 DE 69329545 T DE69329545 T DE 69329545T DE 69329545 T DE69329545 T DE 69329545T DE 69329545 D1 DE69329545 D1 DE 69329545D1
Authority
DE
Germany
Prior art keywords
manufacturing
liquid crystal
crystal display
same
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69329545T
Other languages
English (en)
Other versions
DE69329545T2 (de
Inventor
Tetsuo Asaba
Masaru Sakamamoto
Yutaka Genchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP35774692A external-priority patent/JPH06196675A/ja
Priority claimed from JP3116593A external-priority patent/JPH06222391A/ja
Priority claimed from JP16001993A external-priority patent/JPH06347830A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69329545D1 publication Critical patent/DE69329545D1/de
Publication of DE69329545T2 publication Critical patent/DE69329545T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G02F1/136281—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon having a transmissive semiconductor substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/105—Materials and properties semiconductor single crystal Si

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
DE69329545T 1992-12-25 1993-12-23 Halbleitervorrichtung für Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69329545T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP35774692A JPH06196675A (ja) 1992-12-25 1992-12-25 半導体基体の形成方法及び該基体を用いた半導体装置
JP3116593A JPH06222391A (ja) 1993-01-28 1993-01-28 半導体装置及び液晶表示装置
JP16001993A JPH06347830A (ja) 1993-06-07 1993-06-07 光透過型半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69329545D1 true DE69329545D1 (de) 2000-11-16
DE69329545T2 DE69329545T2 (de) 2001-05-31

Family

ID=27287229

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329545T Expired - Fee Related DE69329545T2 (de) 1992-12-25 1993-12-23 Halbleitervorrichtung für Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung

Country Status (3)

Country Link
US (1) US6128052A (de)
EP (1) EP0604231B8 (de)
DE (1) DE69329545T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3689505B2 (ja) * 1995-11-01 2005-08-31 キヤノン株式会社 半導体装置の作製方法
JP3219685B2 (ja) * 1996-06-04 2001-10-15 キヤノン株式会社 液晶表示装置およびその製造方法
US6288764B1 (en) * 1996-06-25 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device or electronic device having liquid crystal display panel
US6346978B1 (en) * 1999-07-13 2002-02-12 Sharp Laboratories Of America, Inc. SOI TFT array substrate for LCD projection display
JP4217434B2 (ja) * 2002-07-04 2009-02-04 キヤノン株式会社 スルーホールの形成方法及びこれを用いたインクジェットヘッド
US7508034B2 (en) * 2002-09-25 2009-03-24 Sharp Kabushiki Kaisha Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
JP2008181109A (ja) * 2006-12-27 2008-08-07 Semiconductor Energy Lab Co Ltd 液晶表示装置及びそれを用いた電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63101829A (ja) * 1986-10-17 1988-05-06 Nec Corp アクテイブ・マトリツクス液晶表示装置およびその製造方法
ATE194882T1 (de) * 1987-03-04 2000-08-15 Advanced Micro Devices Inc Passivationsschicht für integrierte schaltungsstruktur
GB2204980A (en) * 1987-05-22 1988-11-23 Philips Electronic Associated Active matrix addressed liquid crystal display devices
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
US6067062A (en) * 1990-09-05 2000-05-23 Seiko Instruments Inc. Light valve device
US5258320A (en) * 1990-12-31 1993-11-02 Kopin Corporation Single crystal silicon arrayed devices for display panels
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
CA2061796C (en) * 1991-03-28 2002-12-24 Kalluri R. Sarma High mobility integrated drivers for active matrix displays
EP0530972B1 (de) * 1991-08-02 1997-11-05 Canon Kabushiki Kaisha Flüssigkristall-Anzeigeeinheit
JP3526058B2 (ja) * 1992-08-19 2004-05-10 セイコーインスツルメンツ株式会社 光弁用半導体装置
US5258323A (en) * 1992-12-29 1993-11-02 Honeywell Inc. Single crystal silicon on quartz

Also Published As

Publication number Publication date
EP0604231B1 (de) 2000-10-11
EP0604231B8 (de) 2001-04-11
EP0604231A1 (de) 1994-06-29
DE69329545T2 (de) 2001-05-31
US6128052A (en) 2000-10-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee