DE69326543D1 - Monolithisch integrierte Struktur einer elektronischen Vorrichtung mit einer bestimmten unidirektionalen Konduktionsschwellenspannung - Google Patents
Monolithisch integrierte Struktur einer elektronischen Vorrichtung mit einer bestimmten unidirektionalen KonduktionsschwellenspannungInfo
- Publication number
- DE69326543D1 DE69326543D1 DE69326543T DE69326543T DE69326543D1 DE 69326543 D1 DE69326543 D1 DE 69326543D1 DE 69326543 T DE69326543 T DE 69326543T DE 69326543 T DE69326543 T DE 69326543T DE 69326543 D1 DE69326543 D1 DE 69326543D1
- Authority
- DE
- Germany
- Prior art keywords
- electronic device
- threshold voltage
- integrated structure
- monolithically integrated
- unidirectional conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP93830180A EP0622849B1 (de) | 1993-04-28 | 1993-04-28 | Monolithisch integrierte Struktur einer elektronischen Vorrichtung mit einer bestimmten unidirektionalen Konduktionsschwellenspannung |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69326543D1 true DE69326543D1 (de) | 1999-10-28 |
DE69326543T2 DE69326543T2 (de) | 2000-01-05 |
Family
ID=8215155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69326543T Expired - Lifetime DE69326543T2 (de) | 1993-04-28 | 1993-04-28 | Monolithisch integrierte Struktur einer elektronischen Vorrichtung mit einer bestimmten unidirektionalen Konduktionsschwellenspannung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5521414A (de) |
EP (1) | EP0622849B1 (de) |
JP (1) | JPH07130963A (de) |
DE (1) | DE69326543T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0624906B1 (de) * | 1993-05-13 | 2001-08-08 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Integrierte Schaltungsstruktur für den Schutz von Leistungsvorrichtung gegen Überspannungen |
DE69327320T2 (de) * | 1993-09-30 | 2000-05-31 | Cons Ric Microelettronica | Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung |
EP0657933B1 (de) * | 1993-12-13 | 2000-06-28 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Integrierte aktive Klammerungsstruktur für den Schutz von Leistungshalbleiterbauelementen gegen Überspannungen |
FR2725307B1 (fr) * | 1994-09-30 | 1996-12-20 | Sgs Thomson Microelectronics | Composant semiconducteur d'alimentation, de recirculation et de demagnetisation d'une charge selfique |
EP0809293B1 (de) * | 1996-05-21 | 2001-08-29 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Leistungshalbleiterstruktur mit einem durch den Vertikaltransistor gesteuerten Lateraltransistor |
JP2943738B2 (ja) * | 1996-11-29 | 1999-08-30 | 日本電気株式会社 | 半導体装置における静電保護回路 |
US6160292A (en) * | 1997-04-23 | 2000-12-12 | International Business Machines Corporation | Circuit and methods to improve the operation of SOI devices |
FR2764136B1 (fr) * | 1997-05-28 | 1999-08-13 | Sgs Thomson Microelectronics | Protection contre des surtensions d'un transistor mos de puissance integre |
IT1296832B1 (it) * | 1997-12-02 | 1999-08-02 | Sgs Thomson Microelectronics | Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione |
JP3255147B2 (ja) * | 1998-06-19 | 2002-02-12 | 株式会社デンソー | 絶縁ゲート型トランジスタのサージ保護回路 |
US6429489B1 (en) | 2001-05-18 | 2002-08-06 | International Business Machines Corporation | Electrostatic discharge power clamp circuit |
US6798041B1 (en) * | 2002-06-19 | 2004-09-28 | Micrel, Inc. | Method and system for providing a power lateral PNP transistor using a buried power buss |
JP3998583B2 (ja) * | 2003-01-31 | 2007-10-31 | 株式会社東芝 | 光半導体装置 |
DE102011079569B4 (de) * | 2011-07-21 | 2013-11-07 | Hs Elektronik Systeme Gmbh | Leistungs- oder Stromverteilungssystem eines Flugzeuges mit einer aktiven Transistor-Klemmschaltung sowie zugehöriges Verfahren zum aktiven Pegelhalten |
US10290702B2 (en) | 2012-07-31 | 2019-05-14 | Silanna Asia Pte Ltd | Power device on bulk substrate |
US8994105B2 (en) * | 2012-07-31 | 2015-03-31 | Azure Silicon LLC | Power device integration on a common substrate |
US9412881B2 (en) | 2012-07-31 | 2016-08-09 | Silanna Asia Pte Ltd | Power device integration on a common substrate |
EP2757688B1 (de) * | 2013-01-18 | 2019-05-22 | HS Elektronik Systeme GmbH | Aktive geklemmte Transistorschaltung für Niedertemperaturbetriebsbedingungen |
US9431532B1 (en) * | 2015-02-13 | 2016-08-30 | PowerWyse, Inc. | System and method for fabricating high voltage power MOSFET |
DE102015108091A1 (de) * | 2015-05-21 | 2016-11-24 | Infineon Technologies Dresden Gmbh | Transistoranordnung mit Leistungstransistoren und spannungslimitierenden Bauteilen |
US9923059B1 (en) | 2017-02-20 | 2018-03-20 | Silanna Asia Pte Ltd | Connection arrangements for integrated lateral diffusion field effect transistors |
US10083897B2 (en) | 2017-02-20 | 2018-09-25 | Silanna Asia Pte Ltd | Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5568669A (en) * | 1978-11-17 | 1980-05-23 | Fuji Electric Co Ltd | Fabrication method of semiconductor device containing overvoltage protecting zener diode |
JPS59198768A (ja) * | 1983-04-26 | 1984-11-10 | Nec Corp | ツエナ−ダイオ−ド |
JP2724146B2 (ja) * | 1987-05-29 | 1998-03-09 | 日産自動車株式会社 | 縦形mosfet |
JPS63301555A (ja) * | 1987-06-01 | 1988-12-08 | Nec Corp | 半導体装置 |
US4736271A (en) * | 1987-06-23 | 1988-04-05 | Signetics Corporation | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
JPH0465878A (ja) * | 1990-07-06 | 1992-03-02 | Fuji Electric Co Ltd | 半導体装置 |
-
1993
- 1993-04-28 EP EP93830180A patent/EP0622849B1/de not_active Expired - Lifetime
- 1993-04-28 DE DE69326543T patent/DE69326543T2/de not_active Expired - Lifetime
-
1994
- 1994-04-27 JP JP6089809A patent/JPH07130963A/ja active Pending
- 1994-04-28 US US08/234,334 patent/US5521414A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0622849B1 (de) | 1999-09-22 |
EP0622849A1 (de) | 1994-11-02 |
US5521414A (en) | 1996-05-28 |
JPH07130963A (ja) | 1995-05-19 |
DE69326543T2 (de) | 2000-01-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |