DE69323609D1 - Verfahren zur Abscheidung von Aluminiumschichten über isolierenden Oxydsubstraten - Google Patents
Verfahren zur Abscheidung von Aluminiumschichten über isolierenden OxydsubstratenInfo
- Publication number
- DE69323609D1 DE69323609D1 DE69323609T DE69323609T DE69323609D1 DE 69323609 D1 DE69323609 D1 DE 69323609D1 DE 69323609 T DE69323609 T DE 69323609T DE 69323609 T DE69323609 T DE 69323609T DE 69323609 D1 DE69323609 D1 DE 69323609D1
- Authority
- DE
- Germany
- Prior art keywords
- deposition
- insulating oxide
- layers over
- aluminum layers
- over insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53219—Aluminium alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/990,959 US5330629A (en) | 1992-12-15 | 1992-12-15 | Method for depositing aluminum layers on insulating oxide substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69323609D1 true DE69323609D1 (de) | 1999-04-01 |
DE69323609T2 DE69323609T2 (de) | 1999-08-12 |
Family
ID=25536689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69323609T Expired - Fee Related DE69323609T2 (de) | 1992-12-15 | 1993-12-02 | Verfahren zur Abscheidung von Aluminiumschichten über isolierenden Oxydsubstraten |
Country Status (4)
Country | Link |
---|---|
US (1) | US5330629A (de) |
EP (1) | EP0604036B1 (de) |
JP (1) | JPH06220611A (de) |
DE (1) | DE69323609T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5858464A (en) * | 1997-02-13 | 1999-01-12 | Applied Materials, Inc. | Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers |
US6287970B1 (en) | 1999-08-06 | 2001-09-11 | Agere Systems Inc. | Method of making a semiconductor with copper passivating film |
US6391163B1 (en) | 1999-09-27 | 2002-05-21 | Applied Materials, Inc. | Method of enhancing hardness of sputter deposited copper films |
US6432819B1 (en) | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
TW200910478A (en) * | 2007-08-17 | 2009-03-01 | Advanced Semiconductor Eng | Method for manufacturing a device having high aspect ratio via |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1057035A (en) * | 1963-08-26 | 1967-02-01 | Standard Telephones Cables Ltd | Manufacture of aluminium compounds |
US4254189A (en) * | 1979-07-05 | 1981-03-03 | Memorex Corporation | Disc having substrate, intermediate layer and magnetically sensitive layer wherein intermediate layer has melting point less than annealing temperature of substrate but higher than processing temperature of magnetically sensitive layer |
JPS5794621U (de) * | 1980-11-27 | 1982-06-10 | ||
JPS5950149A (ja) * | 1982-09-14 | 1984-03-23 | Toyota Motor Corp | 繊維強化金属複合材料 |
GB2165692B (en) * | 1984-08-25 | 1989-05-04 | Ricoh Kk | Manufacture of interconnection patterns |
DE3776203D1 (de) * | 1986-04-14 | 1992-03-05 | Philips Nv | Halbleiteranordnung mit einer aluminium-verbindungsschicht mit geringem vanadium-prozentgehalt. |
JPS63162854A (ja) * | 1986-12-25 | 1988-07-06 | Fujitsu Ltd | 金属膜形成方法 |
US5171642A (en) * | 1989-04-17 | 1992-12-15 | International Business Machines Corporation | Multilayered intermetallic connection for semiconductor devices |
US4975299A (en) * | 1989-11-02 | 1990-12-04 | Eastman Kodak Company | Vapor deposition process for depositing an organo-metallic compound layer on a substrate |
JP2964505B2 (ja) * | 1989-11-21 | 1999-10-18 | 日本電気株式会社 | 集積回路装置製造用スパッタリングターゲット |
US5217589A (en) * | 1991-10-03 | 1993-06-08 | Motorola, Inc. | Method of adherent metal coating for aluminum nitride surfaces |
-
1992
- 1992-12-15 US US07/990,959 patent/US5330629A/en not_active Expired - Lifetime
-
1993
- 1993-12-02 EP EP93309630A patent/EP0604036B1/de not_active Expired - Lifetime
- 1993-12-02 DE DE69323609T patent/DE69323609T2/de not_active Expired - Fee Related
- 1993-12-14 JP JP5342032A patent/JPH06220611A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0604036B1 (de) | 1999-02-24 |
EP0604036A2 (de) | 1994-06-29 |
EP0604036A3 (en) | 1994-08-24 |
DE69323609T2 (de) | 1999-08-12 |
US5330629A (en) | 1994-07-19 |
JPH06220611A (ja) | 1994-08-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |