DE69317925D1 - Transistor mit hoher Elektronengeschwindigkeit - Google Patents

Transistor mit hoher Elektronengeschwindigkeit

Info

Publication number
DE69317925D1
DE69317925D1 DE69317925T DE69317925T DE69317925D1 DE 69317925 D1 DE69317925 D1 DE 69317925D1 DE 69317925 T DE69317925 T DE 69317925T DE 69317925 T DE69317925 T DE 69317925T DE 69317925 D1 DE69317925 D1 DE 69317925D1
Authority
DE
Germany
Prior art keywords
high electron
electron speed
speed transistor
transistor
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69317925T
Other languages
English (en)
Other versions
DE69317925T2 (de
Inventor
Shigeru Hiramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69317925D1 publication Critical patent/DE69317925D1/de
Application granted granted Critical
Publication of DE69317925T2 publication Critical patent/DE69317925T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69317925T 1992-02-25 1993-02-25 Transistor mit hoher Elektronengeschwindigkeit Expired - Fee Related DE69317925T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4073167A JPH05235055A (ja) 1992-02-25 1992-02-25 化合物半導体装置

Publications (2)

Publication Number Publication Date
DE69317925D1 true DE69317925D1 (de) 1998-05-20
DE69317925T2 DE69317925T2 (de) 1998-11-19

Family

ID=13510334

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69317925T Expired - Fee Related DE69317925T2 (de) 1992-02-25 1993-02-25 Transistor mit hoher Elektronengeschwindigkeit

Country Status (6)

Country Link
US (1) US5406099A (de)
EP (1) EP0558011B1 (de)
JP (1) JPH05235055A (de)
KR (1) KR100286093B1 (de)
DE (1) DE69317925T2 (de)
TW (1) TW210399B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5668387A (en) * 1995-10-26 1997-09-16 Trw Inc. Relaxed channel high electron mobility transistor
JP3123940B2 (ja) * 1997-03-27 2001-01-15 日本電気株式会社 電界効果トランジスタおよびその製造方法
US5981319A (en) * 1997-09-22 1999-11-09 Lucent Technologies Inc. Method of forming a T-shaped gate
US6150680A (en) * 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
RU2597677C1 (ru) * 2015-05-21 2016-09-20 федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" (Южный федеральный университет) Четырехконтактный элемент интегрального коммутатора

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298179A (ja) * 1986-06-18 1987-12-25 Hitachi Ltd 半導体装置
US4788156A (en) * 1986-09-24 1988-11-29 Microwave Technology, Inc. Subchannel doping to reduce short-gate effects in field effect transistors
JPH02192737A (ja) * 1989-01-20 1990-07-30 Nec Corp 電界効果トランジスタ
US5028968A (en) * 1990-01-02 1991-07-02 The Aerospace Corporation Radiation hard GaAs high electron mobility transistor

Also Published As

Publication number Publication date
EP0558011A3 (en) 1993-12-08
KR100286093B1 (ko) 2001-09-17
DE69317925T2 (de) 1998-11-19
JPH05235055A (ja) 1993-09-10
US5406099A (en) 1995-04-11
EP0558011B1 (de) 1998-04-15
TW210399B (de) 1993-08-01
KR930018757A (ko) 1993-09-22
EP0558011A2 (de) 1993-09-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee