DE69307157D1 - Methode und Vorrichtung zum Polieren der Rundkanten von Wafern - Google Patents

Methode und Vorrichtung zum Polieren der Rundkanten von Wafern

Info

Publication number
DE69307157D1
DE69307157D1 DE69307157T DE69307157T DE69307157D1 DE 69307157 D1 DE69307157 D1 DE 69307157D1 DE 69307157 T DE69307157 T DE 69307157T DE 69307157 T DE69307157 T DE 69307157T DE 69307157 D1 DE69307157 D1 DE 69307157D1
Authority
DE
Germany
Prior art keywords
wafers
polishing
round edges
round
edges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69307157T
Other languages
English (en)
Other versions
DE69307157T2 (de
Inventor
Fumihiko Hasegawa
Tatsuo Ohtani
Hiroshi Kawano
Masayuki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69307157D1 publication Critical patent/DE69307157D1/de
Publication of DE69307157T2 publication Critical patent/DE69307157T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/959—Mechanical polishing of wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
DE69307157T 1992-01-24 1993-01-25 Methode und Vorrichtung zum Polieren der Rundkanten von Wafern Expired - Fee Related DE69307157T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4032859A JP2628424B2 (ja) 1992-01-24 1992-01-24 ウエーハ面取部の研磨方法及び装置

Publications (2)

Publication Number Publication Date
DE69307157D1 true DE69307157D1 (de) 1997-02-20
DE69307157T2 DE69307157T2 (de) 1997-08-14

Family

ID=12370575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69307157T Expired - Fee Related DE69307157T2 (de) 1992-01-24 1993-01-25 Methode und Vorrichtung zum Polieren der Rundkanten von Wafern

Country Status (4)

Country Link
US (1) US5316620A (de)
EP (1) EP0552989B1 (de)
JP (1) JP2628424B2 (de)
DE (1) DE69307157T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5521781A (en) * 1992-10-30 1996-05-28 Shin-Etsu Chemical Co., Ltd. Substrate for magnetic recording medium
US5577949A (en) * 1993-07-20 1996-11-26 C. Uyemura & Co., Ltd. Buffing method
JP2832138B2 (ja) * 1993-09-30 1998-12-02 信越半導体株式会社 ウェーハ外周部の研磨装置
US5474649A (en) * 1994-03-08 1995-12-12 Applied Materials, Inc. Plasma processing apparatus employing a textured focus ring
TW308561B (de) * 1995-08-24 1997-06-21 Mutsubishi Gum Kk
JP3379097B2 (ja) * 1995-11-27 2003-02-17 信越半導体株式会社 両面研磨装置及び方法
DE19732433A1 (de) * 1996-07-29 1998-02-12 Mitsubishi Material Silicon Verfahren und Gerät zum Polieren von Schrägkanten von Halbleiterwafern
JP3620679B2 (ja) * 1996-08-27 2005-02-16 信越半導体株式会社 遊離砥粒によるウエーハの面取装置及び面取方法
DE19636055A1 (de) * 1996-09-05 1998-03-12 Wacker Siltronic Halbleitermat Verfahren zur materialabtragenden Bearbeitung der Kante einer Halbleiterscheibe
EP0841102B1 (de) * 1996-10-09 2003-01-22 Ebara Corporation Vorrichtung zum Drehen und Polieren
JPH10249689A (ja) * 1997-03-10 1998-09-22 Tokyo Seimitsu Co Ltd ウェーハ面取方法及び装置
DE19722679A1 (de) * 1997-05-30 1998-12-03 Wacker Siltronic Halbleitermat Scheibenhalter und Verfahren zur Herstellung einer Halbleiterscheibe
US5876266A (en) * 1997-07-15 1999-03-02 International Business Machines Corporation Polishing pad with controlled release of desired micro-encapsulated polishing agents
DE69817771T2 (de) * 1998-06-05 2004-03-11 Tokyo Seimitsu Co. Ltd., Mitaka Verfahren und Vorrichtung zum Abfasen von Halbleiterscheiben
CN1138612C (zh) 1998-06-25 2004-02-18 尤诺瓦英国有限公司 抛光晶片边缘的方法和设备
JP3325854B2 (ja) * 1999-04-09 2002-09-17 ナオイ精機株式会社 円形ワ−クの研削装置
US6376395B2 (en) * 2000-01-11 2002-04-23 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process
WO2001062436A1 (fr) * 2000-02-23 2001-08-30 Shin-Etsu Handotai Co., Ltd. Procede et appareil permettant de polir une partie circulaire exterieure a chanfrein d'une tranche
WO2002005337A1 (fr) * 2000-07-10 2002-01-17 Shin-Etsu Handotai Co., Ltd. Tranche a chanfreinage en miroir, tissu a polir pour chanfreinage en miroir, machine a polir pour chanfreinage en miroir et procede associe
WO2006035894A1 (ja) * 2004-09-29 2006-04-06 Hoya Corporation 薄膜付基板の支持部材、薄膜付基板の収納容器、マスクブランク収納体、転写マスク収納体、及び薄膜付基板の輸送方法
US7559825B2 (en) * 2006-12-21 2009-07-14 Memc Electronic Materials, Inc. Method of polishing a semiconductor wafer
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
CN108818218A (zh) * 2018-06-10 2018-11-16 临清市森源博乐器配件制造有限公司 架子鼓鼓槌槌头加工装置
CN115179133A (zh) * 2022-08-18 2022-10-14 李玉婷 一种具有金属管道端口除锈功能的打磨装置
CN117415698B (zh) * 2023-12-19 2024-02-13 山东粤海金半导体科技有限公司 一种用于碳化硅晶片边缘抛光装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4031667A (en) * 1976-03-29 1977-06-28 Macronetics, Inc. Apparatus for contouring edge of semiconductor wafers
IT1229640B (it) * 1987-06-29 1991-09-04 S G S Microelettronica S P A O Processo di conformazione del bordo di fette di materiale semiconduttore e relativa apparecchiatura
JPH0637025B2 (ja) * 1987-09-14 1994-05-18 スピードファム株式会社 ウエハの鏡面加工装置
DE68919373T2 (de) * 1988-02-15 1995-03-30 Tokyo Seimitsu Co Ltd Verfahren und Vorrichtung für die Nachbearbeitung auf Innenlochfeinbearbeitungsmaschinen.
DE3902125C1 (en) * 1989-01-25 1989-12-28 Gmn Georg Mueller Nuernberg Ag, 8500 Nuernberg, De Apparatus for grinding edges on flat, disc-shaped workpieces
JPH0624179B2 (ja) * 1989-04-17 1994-03-30 信越半導体株式会社 半導体シリコンウェーハおよびその製造方法
US5128281A (en) * 1991-06-05 1992-07-07 Texas Instruments Incorporated Method for polishing semiconductor wafer edges
JP2916028B2 (ja) * 1991-07-19 1999-07-05 スピードファム 株式会社 ワークエッジの鏡面研磨方法及び装置

Also Published As

Publication number Publication date
JP2628424B2 (ja) 1997-07-09
EP0552989B1 (de) 1997-01-08
EP0552989A1 (de) 1993-07-28
DE69307157T2 (de) 1997-08-14
US5316620A (en) 1994-05-31
JPH07169721A (ja) 1995-07-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee