DE69304396D1 - Vorrichtung zur Dickenmessung von Dünnschichten von Halbleitern - Google Patents

Vorrichtung zur Dickenmessung von Dünnschichten von Halbleitern

Info

Publication number
DE69304396D1
DE69304396D1 DE69304396T DE69304396T DE69304396D1 DE 69304396 D1 DE69304396 D1 DE 69304396D1 DE 69304396 T DE69304396 T DE 69304396T DE 69304396 T DE69304396 T DE 69304396T DE 69304396 D1 DE69304396 D1 DE 69304396D1
Authority
DE
Germany
Prior art keywords
semiconductors
measuring
thickness
thin layers
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69304396T
Other languages
English (en)
Other versions
DE69304396T2 (de
Inventor
Ryo Hattori
Seizi Nishizawa
Tokuji Takahashi
Ryoichi Fukasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jasco Corp
Mitsubishi Electric Corp
Original Assignee
Jasco Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jasco Corp, Mitsubishi Electric Corp filed Critical Jasco Corp
Application granted granted Critical
Publication of DE69304396D1 publication Critical patent/DE69304396D1/de
Publication of DE69304396T2 publication Critical patent/DE69304396T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
DE69304396T 1992-04-28 1993-03-08 Vorrichtung zur Dickenmessung von Dünnschichten von Halbleitern Expired - Fee Related DE69304396T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4109798A JPH05302816A (ja) 1992-04-28 1992-04-28 半導体膜厚測定装置

Publications (2)

Publication Number Publication Date
DE69304396D1 true DE69304396D1 (de) 1996-10-10
DE69304396T2 DE69304396T2 (de) 1997-04-17

Family

ID=14519492

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69304396T Expired - Fee Related DE69304396T2 (de) 1992-04-28 1993-03-08 Vorrichtung zur Dickenmessung von Dünnschichten von Halbleitern

Country Status (5)

Country Link
US (1) US5371596A (de)
EP (1) EP0567745B1 (de)
JP (1) JPH05302816A (de)
KR (1) KR940005948A (de)
DE (1) DE69304396T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH074922A (ja) * 1993-06-21 1995-01-10 Jasco Corp 半導体多層薄膜膜厚測定装置およびその測定方法
DE19646770A1 (de) * 1996-11-13 1998-05-14 Koch Alexander W Prof Dr Ing H Verfahren und Vorrichtung zur optischen Dünnschicht-Biosensorik
JPH10223715A (ja) * 1997-02-06 1998-08-21 Toshiba Ceramics Co Ltd 多層エピタキシャルウェーハのエピ膜厚の測定方法
US6286685B1 (en) 1999-03-15 2001-09-11 Seh America, Inc. System and method for wafer thickness sorting
US6284986B1 (en) 1999-03-15 2001-09-04 Seh America, Inc. Method of determining the thickness of a layer on a silicon substrate
US6392756B1 (en) 1999-06-18 2002-05-21 N&K Technology, Inc. Method and apparatus for optically determining physical parameters of thin films deposited on a complex substrate
US6091485A (en) * 1999-12-15 2000-07-18 N & K Technology, Inc. Method and apparatus for optically determining physical parameters of underlayers
DE10123470B4 (de) * 2001-05-15 2010-08-19 Carl Zeiss Jena Gmbh Verfahren und Anordnung zur berührungslosen Ermittlung von Produkteigenschaften
KR20030016935A (ko) * 2001-08-23 2003-03-03 광주과학기술원 광섬유 렌즈의 초점거리를 이용한 물질의 두께 측정장치및 그 방법
JP4449293B2 (ja) * 2001-12-19 2010-04-14 株式会社ニコン 成膜装置、及び光学部材の製造方法
DE10319843A1 (de) * 2003-05-03 2004-12-02 Infineon Technologies Ag Verfahren zum Bestimmen der Tiefe einer vergrabenen Struktur
US7177030B2 (en) * 2004-04-22 2007-02-13 Technion Research And Development Foundation Ltd. Determination of thin film topography
KR102659670B1 (ko) * 2019-07-31 2024-04-19 에스케이하이닉스 주식회사 두께 측정 장치 및 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5912121B2 (ja) * 1976-09-29 1984-03-21 キヤノン株式会社 干渉測定法
JP2728773B2 (ja) * 1990-09-11 1998-03-18 日本分光株式会社 半導体多層薄膜の膜厚評価装置及び膜厚評価方法
JPH03110405A (ja) * 1989-09-25 1991-05-10 Japan Spectroscopic Co 多層薄膜評価装置
DE69021813T2 (de) * 1989-09-25 1996-05-23 Jasco Corp Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen.
US5002394A (en) * 1990-01-30 1991-03-26 Midac Corporation Fabricating interferometers having reduced misalignment problems
US5159408A (en) * 1991-03-27 1992-10-27 Hughes Danbury Optical Systems, Inc. Optical thickness profiler using synthetic wavelengths
US5210590A (en) * 1992-02-18 1993-05-11 L. T. Industries, Inc. Rapid scanning spectrographic analyzer
US5202939A (en) * 1992-07-21 1993-04-13 Institut National D'optique Fabry-perot optical sensing device for measuring a physical parameter

Also Published As

Publication number Publication date
DE69304396T2 (de) 1997-04-17
JPH05302816A (ja) 1993-11-16
EP0567745A2 (de) 1993-11-03
KR940005948A (ko) 1994-03-22
EP0567745A3 (de) 1994-01-19
EP0567745B1 (de) 1996-09-04
US5371596A (en) 1994-12-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee