DE69303198D1 - Vorrichtung zur Erzeugung von Licht mit kurzer Wellenlänge - Google Patents

Vorrichtung zur Erzeugung von Licht mit kurzer Wellenlänge

Info

Publication number
DE69303198D1
DE69303198D1 DE69303198T DE69303198T DE69303198D1 DE 69303198 D1 DE69303198 D1 DE 69303198D1 DE 69303198 T DE69303198 T DE 69303198T DE 69303198 T DE69303198 T DE 69303198T DE 69303198 D1 DE69303198 D1 DE 69303198D1
Authority
DE
Germany
Prior art keywords
short wavelength
generating light
generating
light
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69303198T
Other languages
English (en)
Other versions
DE69303198T2 (de
Inventor
Yasuo Kitaoka
Kazuhisa Yamamoto
Kiminori Mizuuchi
Makoto Kato
Fumihiro Sogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69303198D1 publication Critical patent/DE69303198D1/de
Publication of DE69303198T2 publication Critical patent/DE69303198T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08004Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/08009Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109Frequency multiplication, e.g. harmonic generation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0092Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143Littman-Metcalf configuration, e.g. laser - grating - mirror

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
DE69303198T 1992-03-03 1993-03-02 Vorrichtung zur Erzeugung von Licht mit kurzer Wellenlänge Expired - Lifetime DE69303198T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4531992 1992-03-03
JP18203092 1992-07-09

Publications (2)

Publication Number Publication Date
DE69303198D1 true DE69303198D1 (de) 1996-07-25
DE69303198T2 DE69303198T2 (de) 1996-12-12

Family

ID=26385291

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69303198T Expired - Lifetime DE69303198T2 (de) 1992-03-03 1993-03-02 Vorrichtung zur Erzeugung von Licht mit kurzer Wellenlänge

Country Status (3)

Country Link
US (1) US5301059A (de)
EP (1) EP0559139B1 (de)
DE (1) DE69303198T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3084960B2 (ja) * 1992-09-22 2000-09-04 松下電器産業株式会社 回折格子およびその作製法および第2高調波発生装置
DE69423022T2 (de) * 1993-05-21 2000-08-03 Matsushita Electric Ind Co Ltd Vorrichtung mit kurzwellenlängiger Lichtquelle
US5434874A (en) * 1993-10-08 1995-07-18 Hewlett-Packard Company Method and apparatus for optimizing output characteristics of a tunable external cavity laser
JPH08510571A (ja) * 1994-03-11 1996-11-05 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 電磁放射の周波数を上昇させる装置
JPH07318996A (ja) * 1994-03-28 1995-12-08 Matsushita Electron Corp 波長変換導波路型レーザ装置
FR2725081B1 (fr) * 1994-09-23 1996-11-15 Thomson Csf Source optique compacte, basee sur le doublage de frequence d'un laser et auto-stabilisee par depeuplement de la pompe
US5555253A (en) * 1995-01-09 1996-09-10 Amoco Corporation Technique for locking a laser diode to a passive cavity
US5867303A (en) * 1997-05-19 1999-02-02 Altos Inc. Method and apparatus for optimizing the output of a harmonic generator
US6195198B1 (en) * 1997-06-12 2001-02-27 Fuji Photo Film Co., Ltd. Optical wavelength conversion system
US6233045B1 (en) * 1998-05-18 2001-05-15 Light Works Llc Self-mixing sensor apparatus and method
JP2001242500A (ja) * 2000-03-02 2001-09-07 Fuji Photo Film Co Ltd 光波長変換モジュール
US6706462B2 (en) * 2000-04-18 2004-03-16 Fuji Photo Film Co., Ltd. Photosensitive image-recording material
US6845113B2 (en) * 2000-10-31 2005-01-18 Matsushita Electric Industrial Co., Ltd. Coherent light source and recording/reproducing apparatus using the same
JP5399398B2 (ja) * 2008-08-25 2014-01-29 パナソニック株式会社 光学ヘッド、回折格子付き光学素子、光ディスク装置及び情報処理装置
DE102008052376A1 (de) * 2008-10-20 2010-04-22 Osram Opto Semiconductors Gmbh Laseranordnung
US8194248B2 (en) * 2008-11-10 2012-06-05 Corning Incorporated Alignment optimization for optical packages
TW201111834A (en) * 2009-08-31 2011-04-01 Epicrystals Oy Stabilized light source
US9325144B2 (en) 2012-02-14 2016-04-26 TeraDiode, Inc. Two-dimensional multi-beam stabilizer and combining systems and methods
CN108233163B (zh) * 2018-03-08 2020-04-28 中国工程物理研究院应用电子学研究所 一种声光移频反馈固体激光器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907237A (en) * 1988-10-18 1990-03-06 The United States Of America As Represented By The Secretary Of Commerce Optical feedback locking of semiconductor lasers
JP2676875B2 (ja) * 1989-02-09 1997-11-17 松下電器産業株式会社 外部共振器型半導体レーザ及び波長多重光伝送装置
FR2660493A1 (fr) * 1990-03-30 1991-10-04 Thomson Csf Dispositif laser a changeur de frequence integre de facon monolithique.
JP2685969B2 (ja) * 1990-08-29 1997-12-08 沖電気工業株式会社 第2高調波発生装置
JP2721436B2 (ja) * 1990-11-07 1998-03-04 沖電気工業株式会社 第2高調波発生装置
US5185752A (en) * 1992-02-18 1993-02-09 Spectra Diode Laboratories, Inc. Coupling arrangements for frequency-doubled diode lasers

Also Published As

Publication number Publication date
US5301059A (en) 1994-04-05
EP0559139A1 (de) 1993-09-08
DE69303198T2 (de) 1996-12-12
EP0559139B1 (de) 1996-06-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP