DE69231125D1 - Zeilenförmiger Bildaufnahmesensor - Google Patents

Zeilenförmiger Bildaufnahmesensor

Info

Publication number
DE69231125D1
DE69231125D1 DE69231125T DE69231125T DE69231125D1 DE 69231125 D1 DE69231125 D1 DE 69231125D1 DE 69231125 T DE69231125 T DE 69231125T DE 69231125 T DE69231125 T DE 69231125T DE 69231125 D1 DE69231125 D1 DE 69231125D1
Authority
DE
Germany
Prior art keywords
line
image acquisition
shaped image
acquisition sensor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69231125T
Other languages
English (en)
Other versions
DE69231125T2 (de
Inventor
Junji Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69231125D1 publication Critical patent/DE69231125D1/de
Publication of DE69231125T2 publication Critical patent/DE69231125T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation
DE69231125T 1992-06-18 1992-11-26 Zeilenförmiger Bildaufnahmesensor Expired - Fee Related DE69231125T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4186218A JP2975216B2 (ja) 1992-06-18 1992-06-18 リニアイメージセンサ及びその駆動方式

Publications (2)

Publication Number Publication Date
DE69231125D1 true DE69231125D1 (de) 2000-07-06
DE69231125T2 DE69231125T2 (de) 2001-02-15

Family

ID=16184440

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231125T Expired - Fee Related DE69231125T2 (de) 1992-06-18 1992-11-26 Zeilenförmiger Bildaufnahmesensor

Country Status (4)

Country Link
US (2) US5326997A (de)
EP (1) EP0574612B1 (de)
JP (1) JP2975216B2 (de)
DE (1) DE69231125T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874993A (en) * 1995-04-21 1999-02-23 Eastman Kodak Company Solid state image sensor with selectable resolution
KR0165338B1 (ko) * 1995-12-30 1998-12-15 김광호 Ccd형 고체촬영소자, 이를 제조하는 방법 및 이를 구동하는 방법
JP2910671B2 (ja) * 1996-05-15 1999-06-23 日本電気株式会社 固体撮像装置
US6462779B1 (en) * 1998-02-23 2002-10-08 Eastman Kodak Company Constant speed, variable resolution two-phase CCD
TW425563B (en) * 1998-06-03 2001-03-11 Nippon Electric Co Solid state image pickup device and driving method therefore
WO2001048826A1 (fr) * 1999-12-24 2001-07-05 Hamamatsu Photonics K.K. Capteur d'energie de semiconducteur
US7071983B2 (en) * 2002-06-19 2006-07-04 Hewlett-Packard Development Company, L.P. System and method for controlling photosensitive charge transfers
US8605187B2 (en) * 2009-06-01 2013-12-10 Truesense Imaging, Inc. CCD image sensors having multiple lateral overflow drain regions for a horizontal shift register
US8736924B2 (en) * 2011-09-28 2014-05-27 Truesense Imaging, Inc. Time-delay-and-integrate image sensors having variable integration times

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939518A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
JPS5679580A (en) * 1979-11-30 1981-06-30 Fujitsu Ltd Solidstate image sensor
US4513431A (en) * 1982-06-07 1985-04-23 International Business Machines Corporation Charge coupled device output circuit structure
JPS6088459A (ja) * 1983-10-21 1985-05-18 Matsushita Electronics Corp 半導体装置
JPS60120555A (ja) * 1983-12-02 1985-06-28 Hitachi Ltd 固体撮像装置
US4620231A (en) * 1984-06-18 1986-10-28 Rca Corporation CCD imager with photodetector bias introduced via the CCD register
JPS6117387A (ja) * 1984-07-02 1986-01-25 Hitachi Cable Ltd 複合金属条の製造方法
JPS6194466A (ja) * 1984-10-15 1986-05-13 Nec Corp 固体撮像素子
US4604652A (en) * 1984-12-24 1986-08-05 Rca Corporation CCD imagers with pixels at least thirty microns long in the direction of charge transfer
JPS61244062A (ja) * 1985-04-22 1986-10-30 Toshiba Corp 固体撮像装置
US4800435A (en) * 1985-11-20 1989-01-24 Nec Corporation Method of driving a two-dimensional CCD image sensor in a shutter mode
JPS62200761A (ja) * 1986-02-28 1987-09-04 Nec Corp 固体撮像素子
US4837628A (en) * 1986-07-14 1989-06-06 Kabushiki Kaisha Toshiba Electronic still camera for recording still picture on memory card with mode selecting shutter release
US4908709A (en) * 1987-12-11 1990-03-13 Fuji Photo Film Co., Ltd. Solid-state electronic imaging device with a photometry function responsive to discarded charge packets
US5055900A (en) * 1989-10-11 1991-10-08 The Trustees Of Columbia University In The City Of New York Trench-defined charge-coupled device
US5047862A (en) * 1989-10-12 1991-09-10 Eastman Kodak Company Solid-state imager
JPH04237271A (ja) * 1991-01-21 1992-08-25 Fuji Photo Film Co Ltd 撮像装置

Also Published As

Publication number Publication date
JP2975216B2 (ja) 1999-11-10
EP0574612A3 (en) 1994-05-11
DE69231125T2 (de) 2001-02-15
US5483282A (en) 1996-01-09
US5326997A (en) 1994-07-05
EP0574612B1 (de) 2000-05-31
EP0574612A2 (de) 1993-12-22
JPH066515A (ja) 1994-01-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee