DE69229083D1 - Sputteranlage und Ionenquelle - Google Patents

Sputteranlage und Ionenquelle

Info

Publication number
DE69229083D1
DE69229083D1 DE69229083T DE69229083T DE69229083D1 DE 69229083 D1 DE69229083 D1 DE 69229083D1 DE 69229083 T DE69229083 T DE 69229083T DE 69229083 T DE69229083 T DE 69229083T DE 69229083 D1 DE69229083 D1 DE 69229083D1
Authority
DE
Germany
Prior art keywords
ion source
sputtering system
sputtering
ion
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229083T
Other languages
English (en)
Other versions
DE69229083T2 (de
Inventor
Kenichi Yanagi
Mitsuo Kato
Kazuya Tsurusaki
Toshio Taguchi
Kenji Atarashiya
Tadashi Rokkaku
Ichiro Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3178114A external-priority patent/JPH0525621A/ja
Priority claimed from JP3178116A external-priority patent/JPH0525622A/ja
Priority claimed from JP3178115A external-priority patent/JPH0528941A/ja
Priority claimed from JP3205907A external-priority patent/JPH0547329A/ja
Priority claimed from JP3205906A external-priority patent/JPH0547328A/ja
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Publication of DE69229083D1 publication Critical patent/DE69229083D1/de
Application granted granted Critical
Publication of DE69229083T2 publication Critical patent/DE69229083T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0822—Multiple sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69229083T 1991-07-18 1992-07-16 Sputteranlage und Ionenquelle Expired - Fee Related DE69229083T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP3178114A JPH0525621A (ja) 1991-07-18 1991-07-18 スパツタリング装置
JP3178116A JPH0525622A (ja) 1991-07-18 1991-07-18 イオン源一体型スパツタリング装置
JP3178115A JPH0528941A (ja) 1991-07-18 1991-07-18 イオン源
JP3205907A JPH0547329A (ja) 1991-08-16 1991-08-16 イオン源
JP3205906A JPH0547328A (ja) 1991-08-16 1991-08-16 イオン源

Publications (2)

Publication Number Publication Date
DE69229083D1 true DE69229083D1 (de) 1999-06-10
DE69229083T2 DE69229083T2 (de) 1999-11-11

Family

ID=27528711

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229083T Expired - Fee Related DE69229083T2 (de) 1991-07-18 1992-07-16 Sputteranlage und Ionenquelle

Country Status (3)

Country Link
US (2) US5288386A (de)
EP (1) EP0523695B1 (de)
DE (1) DE69229083T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6402902B1 (en) * 1995-02-13 2002-06-11 Deposition Sciences, Inc. Apparatus and method for a reliable return current path for sputtering processes
US5863831A (en) * 1995-08-14 1999-01-26 Advanced Materials Engineering Research, Inc. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
US6153067A (en) * 1998-12-30 2000-11-28 Advanced Ion Technology, Inc. Method for combined treatment of an object with an ion beam and a magnetron plasma with a combined magnetron-plasma and ion-beam source
US7079370B2 (en) * 2003-04-28 2006-07-18 Air Products And Chemicals, Inc. Apparatus and method for removal of surface oxides via fluxless technique electron attachment and remote ion generation
US20070051622A1 (en) * 2005-09-02 2007-03-08 Applied Materials, Inc. Simultaneous ion milling and sputter deposition
US20080000768A1 (en) * 2006-06-30 2008-01-03 Stimson Bradley O Electrically Coupled Target Panels
EA030379B1 (ru) 2008-08-04 2018-07-31 Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. Способ нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы (варианты)
WO2010029269A1 (fr) * 2008-09-15 2010-03-18 Centre National De La Recherche Scientifique (C.N.R.S) Dispositif de génération d'un faisceau d'ions avec filtre magnétique
JP6508746B2 (ja) 2014-12-05 2019-05-08 エージーシー フラット グラス ノース アメリカ，インコーポレイテッドＡｇｃ Ｆｌａｔ Ｇｌａｓｓ Ｎｏｒｔｈ Ａｍｅｒｉｃａ，Ｉｎｃ． マクロ粒子低減コーティングを利用したプラズマ源ならびにマクロ粒子低減コーティングを用いたプラズマ源を薄膜コーティングおよび表面改質に使用する方法
EP3228160B1 (de) 2014-12-05 2021-07-21 AGC Glass Europe SA Hohlkathoden-plasmaquelle
US9721764B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Method of producing plasma by multiple-phase alternating or pulsed electrical current
US9721765B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
EP3587619B1 (de) * 2018-06-25 2022-06-22 Deutsches Elektronen-Synchrotron DESY Vorrichtung zur abscheidung eines materials auf der oberfläche eines substrats
RU2759425C1 (ru) * 2020-11-27 2021-11-12 федеральное государственное бюджетное образовательное учреждение высшего образования «Томский государственный университет систем управления и радиоэлектроники» Плазменный эмиттер импульсного форвакуумного источника электронов на основе дугового разряда

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD217082A1 (de) * 1983-08-11 1985-01-02 Karl Marx Stadt Tech Hochschul Einstrahl-ionenquelle
DE3521053A1 (de) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat
US4954751A (en) * 1986-03-12 1990-09-04 Kaufman Harold R Radio frequency hollow cathode
US4841197A (en) * 1986-05-28 1989-06-20 Nihon Shinku Gijutsu Kabushiki Kaisha Double-chamber ion source
DE3708716C2 (de) * 1987-03-18 1993-11-04 Hans Prof Dr Rer Nat Oechsner Hochfrequenz-ionenquelle
EP0339554A3 (de) * 1988-04-26 1989-12-20 Hauzer Holding B.V. Hochfrequenz-Ionenstrahlquelle
DE3844064A1 (de) * 1988-12-28 1990-07-05 Leybold Ag Katodenzerstaeubungsvorrichtung nach dem magnetron-prinzip mit einer hohlkatode und einem zylindrischen target
DE3920835C2 (de) * 1989-06-24 1997-12-18 Leybold Ag Einrichtung zum Beschichten von Substraten
US5154810A (en) * 1991-01-29 1992-10-13 Optical Coating Laboratory, Inc. Thin film coating and method

Also Published As

Publication number Publication date
US5288386A (en) 1994-02-22
EP0523695A1 (de) 1993-01-20
DE69229083T2 (de) 1999-11-11
EP0523695B1 (de) 1999-05-06
US5369337A (en) 1994-11-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee