DE69227137D1 - Verfahren zur Herstellung einer Markierung - Google Patents

Verfahren zur Herstellung einer Markierung

Info

Publication number
DE69227137D1
DE69227137D1 DE69227137T DE69227137T DE69227137D1 DE 69227137 D1 DE69227137 D1 DE 69227137D1 DE 69227137 T DE69227137 T DE 69227137T DE 69227137 T DE69227137 T DE 69227137T DE 69227137 D1 DE69227137 D1 DE 69227137D1
Authority
DE
Germany
Prior art keywords
mark
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69227137T
Other languages
English (en)
Other versions
DE69227137T2 (de
Inventor
Monte A Douglas
Richard A Stoltz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69227137D1 publication Critical patent/DE69227137D1/de
Publication of DE69227137T2 publication Critical patent/DE69227137T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G03C5/58—Processes for obtaining metallic images by vapour deposition or physical development
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Organic Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69227137T 1991-02-28 1992-02-18 Verfahren zur Herstellung einer Markierung Expired - Fee Related DE69227137T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66253891A 1991-02-28 1991-02-28

Publications (2)

Publication Number Publication Date
DE69227137D1 true DE69227137D1 (de) 1998-11-05
DE69227137T2 DE69227137T2 (de) 1999-04-22

Family

ID=24658124

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69227137T Expired - Fee Related DE69227137T2 (de) 1991-02-28 1992-02-18 Verfahren zur Herstellung einer Markierung

Country Status (4)

Country Link
US (1) US6432317B1 (de)
EP (1) EP0501278B1 (de)
JP (1) JPH0572719A (de)
DE (1) DE69227137T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878417B2 (en) * 1997-11-12 2005-04-12 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
JP5771339B2 (ja) * 2012-02-21 2015-08-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 原子層堆積リソグラフィ
CN110799427B (zh) 2017-05-11 2020-07-28 创新水护理有限责任公司 利用锁定装置的漂浮池消毒器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7608152A (nl) * 1975-07-28 1977-02-01 Hitachi Ltd Werkwijze voor de vorming van patronen.
US4282647A (en) * 1978-04-04 1981-08-11 Standard Microsystems Corporation Method of fabricating high density refractory metal gate MOS integrated circuits utilizing the gate as a selective diffusion and oxidation mask
US4560421A (en) * 1980-10-02 1985-12-24 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
DE3377597D1 (en) * 1982-04-12 1988-09-08 Nippon Telegraph & Telephone Method for forming micropattern
US4615904A (en) * 1982-06-01 1986-10-07 Massachusetts Institute Of Technology Maskless growth of patterned films
EP0110882A1 (de) * 1982-06-01 1984-06-20 Massachusetts Institute Of Technology Maskenlose erzeugung gemusterter schichten
US4543270A (en) * 1984-06-20 1985-09-24 Gould Inc. Method for depositing a micron-size metallic film on a transparent substrate utilizing a visible laser
JPS6141762A (ja) * 1984-08-06 1986-02-28 Res Dev Corp Of Japan 超微細パタ−ンの形成法
US4566937A (en) * 1984-10-10 1986-01-28 The United States Of America As Represented By The United States Department Of Energy Electron beam enhanced surface modification for making highly resolved structures
US4626315A (en) * 1984-11-09 1986-12-02 Fuji Photo Film Co., Ltd. Process of forming ultrafine pattern
JPH0642456B2 (ja) * 1984-11-21 1994-06-01 株式会社日立製作所 表面光処理方法
US4612085A (en) * 1985-04-10 1986-09-16 Texas Instruments Incorporated Photochemical patterning
US4677736A (en) * 1986-04-17 1987-07-07 General Electric Company Self-aligned inlay transistor with or without source and drain self-aligned metallization extensions
US4745089A (en) * 1987-06-11 1988-05-17 General Electric Company Self-aligned barrier metal and oxidation mask method
JPH01173650A (ja) * 1987-12-26 1989-07-10 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
US4908226A (en) * 1988-05-23 1990-03-13 Hughes Aircraft Company Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams
US4897150A (en) * 1988-06-29 1990-01-30 Lasa Industries, Inc. Method of direct write desposition of a conductor on a semiconductor
US4981770A (en) * 1989-07-28 1991-01-01 At&T Bell Laboratories Process for fabrication of device
DE3942472A1 (de) * 1989-12-22 1991-06-27 Asea Brown Boveri Beschichtungsverfahren
EP0470784A3 (en) * 1990-08-10 1993-03-03 Motorola Inc. Method for selectively depositing a thin film
US5110760A (en) * 1990-09-28 1992-05-05 The United States Of America As Represented By The Secretary Of The Navy Method of nanometer lithography

Also Published As

Publication number Publication date
EP0501278B1 (de) 1998-09-30
JPH0572719A (ja) 1993-03-26
DE69227137T2 (de) 1999-04-22
EP0501278A1 (de) 1992-09-02
US6432317B1 (en) 2002-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee