EP0470784A3 - Method for selectively depositing a thin film - Google Patents

Method for selectively depositing a thin film Download PDF

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Publication number
EP0470784A3
EP0470784A3 EP19910307148 EP91307148A EP0470784A3 EP 0470784 A3 EP0470784 A3 EP 0470784A3 EP 19910307148 EP19910307148 EP 19910307148 EP 91307148 A EP91307148 A EP 91307148A EP 0470784 A3 EP0470784 A3 EP 0470784A3
Authority
EP
European Patent Office
Prior art keywords
thin film
selectively depositing
depositing
selectively
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19910307148
Other versions
EP0470784A2 (en
Inventor
Edward M. Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of EP0470784A2 publication Critical patent/EP0470784A2/en
Publication of EP0470784A3 publication Critical patent/EP0470784A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
EP19910307148 1990-08-10 1991-08-02 Method for selectively depositing a thin film Withdrawn EP0470784A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56509690A 1990-08-10 1990-08-10
US565096 1990-08-10

Publications (2)

Publication Number Publication Date
EP0470784A2 EP0470784A2 (en) 1992-02-12
EP0470784A3 true EP0470784A3 (en) 1993-03-03

Family

ID=24257199

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19910307148 Withdrawn EP0470784A3 (en) 1990-08-10 1991-08-02 Method for selectively depositing a thin film

Country Status (3)

Country Link
EP (1) EP0470784A3 (en)
JP (1) JPH04233727A (en)
KR (1) KR920005253A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69227137T2 (en) 1991-02-28 1999-04-22 Texas Instruments Inc Process for making a mark
US5460693A (en) * 1994-05-31 1995-10-24 Texas Instruments Incorporated Dry microlithography process

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3378401A (en) * 1964-02-11 1968-04-16 Minnesota Mining & Mfg Process for the formation of visible images on a substrate
WO1983004269A1 (en) * 1982-06-01 1983-12-08 Massachusetts Institute Of Technology Maskless growth of patterned films
EP0241873A2 (en) * 1986-04-18 1987-10-21 AT&T Corp. Fabrication of semiconductor devices utilizing patterned metal layers
JPH1172574A (en) * 1997-08-29 1999-03-16 Rhythm Watch Co Ltd Timepiece

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3378401A (en) * 1964-02-11 1968-04-16 Minnesota Mining & Mfg Process for the formation of visible images on a substrate
WO1983004269A1 (en) * 1982-06-01 1983-12-08 Massachusetts Institute Of Technology Maskless growth of patterned films
EP0241873A2 (en) * 1986-04-18 1987-10-21 AT&T Corp. Fabrication of semiconductor devices utilizing patterned metal layers
JPH1172574A (en) * 1997-08-29 1999-03-16 Rhythm Watch Co Ltd Timepiece

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 13, no. 451 (C-643)(3799) 11 October 1989 & JP-A-11 72 574 ( HITACHI LTD ) 7 July 1989 *
PATENT ABSTRACTS OF JAPAN vol. 14, no. 197 (C-712)(4140) 23 April 1990 & JP-A-20 38 568 ( TOSHIBA CORP ) 7 February 1990 *

Also Published As

Publication number Publication date
KR920005253A (en) 1992-03-28
EP0470784A2 (en) 1992-02-12
JPH04233727A (en) 1992-08-21

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