DE69215990T2 - Temperaturfühlvorrichtung und Temperaturfühlschaltung, die solche Vorrichtung benutzt - Google Patents

Temperaturfühlvorrichtung und Temperaturfühlschaltung, die solche Vorrichtung benutzt

Info

Publication number
DE69215990T2
DE69215990T2 DE1992615990 DE69215990T DE69215990T2 DE 69215990 T2 DE69215990 T2 DE 69215990T2 DE 1992615990 DE1992615990 DE 1992615990 DE 69215990 T DE69215990 T DE 69215990T DE 69215990 T2 DE69215990 T2 DE 69215990T2
Authority
DE
Germany
Prior art keywords
temperature sensing
sensing circuit
circuit
sensing device
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1992615990
Other languages
English (en)
Other versions
DE69215990D1 (de
Inventor
Brendan Patrick Kelly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69215990D1 publication Critical patent/DE69215990D1/de
Publication of DE69215990T2 publication Critical patent/DE69215990T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K3/00—Thermometers giving results other than momentary value of temperature
    • G01K3/08—Thermometers giving results other than momentary value of temperature giving differences of values; giving differentiated values
    • G01K3/14—Thermometers giving results other than momentary value of temperature giving differences of values; giving differentiated values in respect of space
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • G01K7/223—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor characterised by the shape of the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
DE1992615990 1991-07-19 1992-07-10 Temperaturfühlvorrichtung und Temperaturfühlschaltung, die solche Vorrichtung benutzt Expired - Fee Related DE69215990T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919115694A GB9115694D0 (en) 1991-07-19 1991-07-19 A temperature sensing device and a temperature sensing circuit using such a device

Publications (2)

Publication Number Publication Date
DE69215990D1 DE69215990D1 (de) 1997-01-30
DE69215990T2 true DE69215990T2 (de) 1997-05-28

Family

ID=10698687

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992615990 Expired - Fee Related DE69215990T2 (de) 1991-07-19 1992-07-10 Temperaturfühlvorrichtung und Temperaturfühlschaltung, die solche Vorrichtung benutzt

Country Status (4)

Country Link
EP (1) EP0523798B1 (de)
JP (1) JPH05198846A (de)
DE (1) DE69215990T2 (de)
GB (1) GB9115694D0 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994028474A1 (en) * 1993-05-24 1994-12-08 Harris Corporation Thermal protection circuit for a high voltage linear regulator
GB9513420D0 (en) * 1995-06-30 1995-09-06 Philips Electronics Uk Ltd Power semiconductor devices
DE19835453B4 (de) * 1998-08-05 2005-08-18 Infineon Technologies Ag Verfahren zum Messen der Temperatur eines Leistungshalbleiters und Bauelement
US6991367B2 (en) 2003-11-04 2006-01-31 Raytheon Company Integrated thermal sensor for microwave transistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092662A (en) * 1976-09-29 1978-05-30 Honeywell Inc. Sensistor apparatus
DE3431811A1 (de) * 1984-08-30 1986-03-13 Philips Patentverwaltung Gmbh, 2000 Hamburg Halbleiter-temperatursensor
GB2224846A (en) * 1988-11-14 1990-05-16 Philips Electronic Associated Temperature sensing circuit
US5051615A (en) * 1989-07-20 1991-09-24 Teledyne Industries Monolithic resistor comparator circuit

Also Published As

Publication number Publication date
JPH05198846A (ja) 1993-08-06
GB9115694D0 (en) 1991-09-04
DE69215990D1 (de) 1997-01-30
EP0523798A1 (de) 1993-01-20
EP0523798B1 (de) 1996-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee