DE69210497T2 - Infrarotdetektoren - Google Patents

Infrarotdetektoren

Info

Publication number
DE69210497T2
DE69210497T2 DE69210497T DE69210497T DE69210497T2 DE 69210497 T2 DE69210497 T2 DE 69210497T2 DE 69210497 T DE69210497 T DE 69210497T DE 69210497 T DE69210497 T DE 69210497T DE 69210497 T2 DE69210497 T2 DE 69210497T2
Authority
DE
Germany
Prior art keywords
infrared detectors
detectors
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69210497T
Other languages
English (en)
Other versions
DE69210497D1 (de
Inventor
Brian Edward Matthews
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE Systems Electronics Ltd
Original Assignee
GEC Marconi Ltd
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GEC Marconi Ltd, Marconi Co Ltd filed Critical GEC Marconi Ltd
Publication of DE69210497D1 publication Critical patent/DE69210497D1/de
Application granted granted Critical
Publication of DE69210497T2 publication Critical patent/DE69210497T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14649Infrared imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14627Microlenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02327Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281Shape of the body
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
DE69210497T 1991-07-29 1992-07-20 Infrarotdetektoren Expired - Fee Related DE69210497T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919116307A GB9116307D0 (en) 1991-07-29 1991-07-29 Infrared detectors

Publications (2)

Publication Number Publication Date
DE69210497D1 DE69210497D1 (de) 1996-06-13
DE69210497T2 true DE69210497T2 (de) 1996-09-05

Family

ID=10699140

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69210497T Expired - Fee Related DE69210497T2 (de) 1991-07-29 1992-07-20 Infrarotdetektoren

Country Status (4)

Country Link
US (1) US5306915A (de)
EP (1) EP0525876B1 (de)
DE (1) DE69210497T2 (de)
GB (1) GB9116307D0 (de)

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US5593902A (en) * 1994-05-23 1997-01-14 Texas Instruments Incorporated Method of making photodiodes for low dark current operation having geometric enhancement
US5828068A (en) * 1996-04-04 1998-10-27 Raytheon Ti Systems, Inc. Uncooled mercury cadmium telluride infrared devices with integral optical elements
DE19627543B9 (de) * 1996-05-18 2004-10-14 Thomas Hofmann Multi-Layer-Substrat sowie Verfahren zu seiner Herstellung
DE19641272C2 (de) * 1996-10-07 2003-03-27 Franz Heinz Guenther Verfahren zum Herstellen von opto-elektronischen Hybrid-Bauteilen mit Blenden
DE19816309B4 (de) * 1997-04-14 2008-04-03 CiS Institut für Mikrosensorik gGmbH Verfahren zur Direktmontage von Silizium-Sensoren und danach hergestellte Sensoren
IL128450A (en) * 1999-02-09 2002-05-23 Elop Electrooptics Ind Ltd Method of bonding an optical element within an enclosure
US7049761B2 (en) 2000-02-11 2006-05-23 Altair Engineering, Inc. Light tube and power supply circuit
DE10222960A1 (de) * 2002-05-23 2003-12-11 Schott Glas Verfahren zur Herstellung von elektronischen Bauelementen
US7485799B2 (en) * 2002-05-07 2009-02-03 John Michael Guerra Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US20080283121A1 (en) * 2002-05-07 2008-11-20 Nanoptek Corporation Bandgap-shifted semiconductor surface and method for making same, and apparatus for using same
US7995871B2 (en) * 2002-05-07 2011-08-09 Nanoptek Corporation Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
US8673399B2 (en) * 2002-05-07 2014-03-18 Nanoptek Corporation Bandgap-shifted semiconductor surface and method for making same, and apparatus for using same
JP2003344548A (ja) * 2002-05-24 2003-12-03 Seiko Instruments Inc 放射線検出器
CN100550430C (zh) * 2002-09-09 2009-10-14 皇家飞利浦电子股份有限公司 半导体器件及其制造方法
FR2869462B1 (fr) * 2004-04-21 2006-06-02 Fr De Detecteurs Infrarouges S Procede pour la realisation d'un detecteur de rayonnement electromagnetique, et notamment infrarouge
US8118447B2 (en) 2007-12-20 2012-02-21 Altair Engineering, Inc. LED lighting apparatus with swivel connection
US7712918B2 (en) 2007-12-21 2010-05-11 Altair Engineering , Inc. Light distribution using a light emitting diode assembly
US8360599B2 (en) 2008-05-23 2013-01-29 Ilumisys, Inc. Electric shock resistant L.E.D. based light
US7976196B2 (en) 2008-07-09 2011-07-12 Altair Engineering, Inc. Method of forming LED-based light and resulting LED-based light
US7946729B2 (en) 2008-07-31 2011-05-24 Altair Engineering, Inc. Fluorescent tube replacement having longitudinally oriented LEDs
US8674626B2 (en) 2008-09-02 2014-03-18 Ilumisys, Inc. LED lamp failure alerting system
US8256924B2 (en) 2008-09-15 2012-09-04 Ilumisys, Inc. LED-based light having rapidly oscillating LEDs
US8444292B2 (en) 2008-10-24 2013-05-21 Ilumisys, Inc. End cap substitute for LED-based tube replacement light
US8214084B2 (en) 2008-10-24 2012-07-03 Ilumisys, Inc. Integration of LED lighting with building controls
US8653984B2 (en) 2008-10-24 2014-02-18 Ilumisys, Inc. Integration of LED lighting control with emergency notification systems
US8901823B2 (en) 2008-10-24 2014-12-02 Ilumisys, Inc. Light and light sensor
US7938562B2 (en) 2008-10-24 2011-05-10 Altair Engineering, Inc. Lighting including integral communication apparatus
US8324817B2 (en) 2008-10-24 2012-12-04 Ilumisys, Inc. Light and light sensor
US8556452B2 (en) 2009-01-15 2013-10-15 Ilumisys, Inc. LED lens
US8362710B2 (en) 2009-01-21 2013-01-29 Ilumisys, Inc. Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays
US8664880B2 (en) 2009-01-21 2014-03-04 Ilumisys, Inc. Ballast/line detection circuit for fluorescent replacement lamps
US8330381B2 (en) 2009-05-14 2012-12-11 Ilumisys, Inc. Electronic circuit for DC conversion of fluorescent lighting ballast
US8299695B2 (en) 2009-06-02 2012-10-30 Ilumisys, Inc. Screw-in LED bulb comprising a base having outwardly projecting nodes
US8421366B2 (en) 2009-06-23 2013-04-16 Ilumisys, Inc. Illumination device including LEDs and a switching power control system
WO2011119921A2 (en) 2010-03-26 2011-09-29 Altair Engineering, Inc. Led light with thermoelectric generator
CA2794512A1 (en) 2010-03-26 2011-09-29 David L. Simon Led light tube with dual sided light distribution
WO2011119958A1 (en) 2010-03-26 2011-09-29 Altair Engineering, Inc. Inside-out led bulb
US8454193B2 (en) 2010-07-08 2013-06-04 Ilumisys, Inc. Independent modules for LED fluorescent light tube replacement
EP2593714A2 (de) 2010-07-12 2013-05-22 iLumisys, Inc. Leiterplattenhalterung für eine led-lichtröhre
US8523394B2 (en) 2010-10-29 2013-09-03 Ilumisys, Inc. Mechanisms for reducing risk of shock during installation of light tube
US8870415B2 (en) 2010-12-09 2014-10-28 Ilumisys, Inc. LED fluorescent tube replacement light with reduced shock hazard
WO2013028965A2 (en) 2011-08-24 2013-02-28 Ilumisys, Inc. Circuit board mount for led light
WO2013131002A1 (en) 2012-03-02 2013-09-06 Ilumisys, Inc. Electrical connector header for an led-based light
US9163794B2 (en) 2012-07-06 2015-10-20 Ilumisys, Inc. Power supply assembly for LED-based light tube
US9271367B2 (en) 2012-07-09 2016-02-23 Ilumisys, Inc. System and method for controlling operation of an LED-based light
US9285084B2 (en) 2013-03-14 2016-03-15 Ilumisys, Inc. Diffusers for LED-based lights
US9267650B2 (en) 2013-10-09 2016-02-23 Ilumisys, Inc. Lens for an LED-based light
CN106063381A (zh) 2014-01-22 2016-10-26 伊卢米斯公司 具有被寻址led的基于led的灯
US9510400B2 (en) 2014-05-13 2016-11-29 Ilumisys, Inc. User input systems for an LED-based light
US10161568B2 (en) 2015-06-01 2018-12-25 Ilumisys, Inc. LED-based light with canted outer walls
KR20200141817A (ko) * 2019-06-11 2020-12-21 엘지디스플레이 주식회사 전자장치

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GB1525562A (en) * 1975-08-19 1978-09-20 Hawker Siddeley Aviation Ltd Multi-element targets sensitive to incident radiation
US4352948A (en) * 1979-09-07 1982-10-05 Massachusetts Institute Of Technology High-intensity solid-state solar-cell device
US4559695A (en) * 1981-03-27 1985-12-24 U.S. Philips Corporation Method of manufacturing an infrared radiation imaging device
GB2095905B (en) * 1981-03-27 1985-01-16 Philips Electronic Associated Infra-red radiation imaging devices and methods for their manufacture
US4629892A (en) * 1982-12-22 1986-12-16 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Optically immersed detector assembly
FR2544132B1 (fr) * 1983-04-08 1986-11-21 Telecommunications Sa Detecteur photoconducteur en immersion optique
JPS61182531A (ja) * 1985-02-08 1986-08-15 Matsushita Electric Ind Co Ltd 二次元アレイ赤外検出器
GB2241605B (en) * 1985-09-11 1992-01-29 Philips Electronic Associated Infrared photodiodes,arrays and their manufacture
GB2240444B (en) * 1985-12-20 1991-10-30 Philips Electronic Associated Imaging array devices and staring array imaging systems
JPH01320438A (ja) * 1988-06-22 1989-12-26 Fujitsu Ltd 赤外線検知装置
GB2248964A (en) * 1990-10-17 1992-04-22 Philips Electronic Associated Plural-wavelength infrared detector devices

Also Published As

Publication number Publication date
DE69210497D1 (de) 1996-06-13
EP0525876A1 (de) 1993-02-03
GB9116307D0 (en) 1991-11-06
EP0525876B1 (de) 1996-05-08
US5306915A (en) 1994-04-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee