DE69210497T2 - Infrarotdetektoren - Google Patents
InfrarotdetektorenInfo
- Publication number
- DE69210497T2 DE69210497T2 DE69210497T DE69210497T DE69210497T2 DE 69210497 T2 DE69210497 T2 DE 69210497T2 DE 69210497 T DE69210497 T DE 69210497T DE 69210497 T DE69210497 T DE 69210497T DE 69210497 T2 DE69210497 T2 DE 69210497T2
- Authority
- DE
- Germany
- Prior art keywords
- infrared detectors
- detectors
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB919116307A GB9116307D0 (en) | 1991-07-29 | 1991-07-29 | Infrared detectors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69210497D1 DE69210497D1 (de) | 1996-06-13 |
DE69210497T2 true DE69210497T2 (de) | 1996-09-05 |
Family
ID=10699140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69210497T Expired - Fee Related DE69210497T2 (de) | 1991-07-29 | 1992-07-20 | Infrarotdetektoren |
Country Status (4)
Country | Link |
---|---|
US (1) | US5306915A (de) |
EP (1) | EP0525876B1 (de) |
DE (1) | DE69210497T2 (de) |
GB (1) | GB9116307D0 (de) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2833450B2 (ja) * | 1993-11-24 | 1998-12-09 | 日本電気株式会社 | 赤外線撮像素子 |
US5593902A (en) * | 1994-05-23 | 1997-01-14 | Texas Instruments Incorporated | Method of making photodiodes for low dark current operation having geometric enhancement |
US5828068A (en) * | 1996-04-04 | 1998-10-27 | Raytheon Ti Systems, Inc. | Uncooled mercury cadmium telluride infrared devices with integral optical elements |
DE19627543B9 (de) * | 1996-05-18 | 2004-10-14 | Thomas Hofmann | Multi-Layer-Substrat sowie Verfahren zu seiner Herstellung |
DE19641272C2 (de) * | 1996-10-07 | 2003-03-27 | Franz Heinz Guenther | Verfahren zum Herstellen von opto-elektronischen Hybrid-Bauteilen mit Blenden |
DE19816309B4 (de) * | 1997-04-14 | 2008-04-03 | CiS Institut für Mikrosensorik gGmbH | Verfahren zur Direktmontage von Silizium-Sensoren und danach hergestellte Sensoren |
IL128450A (en) * | 1999-02-09 | 2002-05-23 | Elop Electrooptics Ind Ltd | Method of bonding an optical element within an enclosure |
US7049761B2 (en) | 2000-02-11 | 2006-05-23 | Altair Engineering, Inc. | Light tube and power supply circuit |
DE10222960A1 (de) * | 2002-05-23 | 2003-12-11 | Schott Glas | Verfahren zur Herstellung von elektronischen Bauelementen |
US7485799B2 (en) * | 2002-05-07 | 2009-02-03 | John Michael Guerra | Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same |
US20080283121A1 (en) * | 2002-05-07 | 2008-11-20 | Nanoptek Corporation | Bandgap-shifted semiconductor surface and method for making same, and apparatus for using same |
US7995871B2 (en) * | 2002-05-07 | 2011-08-09 | Nanoptek Corporation | Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same |
US8673399B2 (en) * | 2002-05-07 | 2014-03-18 | Nanoptek Corporation | Bandgap-shifted semiconductor surface and method for making same, and apparatus for using same |
JP2003344548A (ja) * | 2002-05-24 | 2003-12-03 | Seiko Instruments Inc | 放射線検出器 |
CN100550430C (zh) * | 2002-09-09 | 2009-10-14 | 皇家飞利浦电子股份有限公司 | 半导体器件及其制造方法 |
FR2869462B1 (fr) * | 2004-04-21 | 2006-06-02 | Fr De Detecteurs Infrarouges S | Procede pour la realisation d'un detecteur de rayonnement electromagnetique, et notamment infrarouge |
US8118447B2 (en) | 2007-12-20 | 2012-02-21 | Altair Engineering, Inc. | LED lighting apparatus with swivel connection |
US7712918B2 (en) | 2007-12-21 | 2010-05-11 | Altair Engineering , Inc. | Light distribution using a light emitting diode assembly |
US8360599B2 (en) | 2008-05-23 | 2013-01-29 | Ilumisys, Inc. | Electric shock resistant L.E.D. based light |
US7976196B2 (en) | 2008-07-09 | 2011-07-12 | Altair Engineering, Inc. | Method of forming LED-based light and resulting LED-based light |
US7946729B2 (en) | 2008-07-31 | 2011-05-24 | Altair Engineering, Inc. | Fluorescent tube replacement having longitudinally oriented LEDs |
US8674626B2 (en) | 2008-09-02 | 2014-03-18 | Ilumisys, Inc. | LED lamp failure alerting system |
US8256924B2 (en) | 2008-09-15 | 2012-09-04 | Ilumisys, Inc. | LED-based light having rapidly oscillating LEDs |
US8444292B2 (en) | 2008-10-24 | 2013-05-21 | Ilumisys, Inc. | End cap substitute for LED-based tube replacement light |
US8214084B2 (en) | 2008-10-24 | 2012-07-03 | Ilumisys, Inc. | Integration of LED lighting with building controls |
US8653984B2 (en) | 2008-10-24 | 2014-02-18 | Ilumisys, Inc. | Integration of LED lighting control with emergency notification systems |
US8901823B2 (en) | 2008-10-24 | 2014-12-02 | Ilumisys, Inc. | Light and light sensor |
US7938562B2 (en) | 2008-10-24 | 2011-05-10 | Altair Engineering, Inc. | Lighting including integral communication apparatus |
US8324817B2 (en) | 2008-10-24 | 2012-12-04 | Ilumisys, Inc. | Light and light sensor |
US8556452B2 (en) | 2009-01-15 | 2013-10-15 | Ilumisys, Inc. | LED lens |
US8362710B2 (en) | 2009-01-21 | 2013-01-29 | Ilumisys, Inc. | Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays |
US8664880B2 (en) | 2009-01-21 | 2014-03-04 | Ilumisys, Inc. | Ballast/line detection circuit for fluorescent replacement lamps |
US8330381B2 (en) | 2009-05-14 | 2012-12-11 | Ilumisys, Inc. | Electronic circuit for DC conversion of fluorescent lighting ballast |
US8299695B2 (en) | 2009-06-02 | 2012-10-30 | Ilumisys, Inc. | Screw-in LED bulb comprising a base having outwardly projecting nodes |
US8421366B2 (en) | 2009-06-23 | 2013-04-16 | Ilumisys, Inc. | Illumination device including LEDs and a switching power control system |
WO2011119921A2 (en) | 2010-03-26 | 2011-09-29 | Altair Engineering, Inc. | Led light with thermoelectric generator |
CA2794512A1 (en) | 2010-03-26 | 2011-09-29 | David L. Simon | Led light tube with dual sided light distribution |
WO2011119958A1 (en) | 2010-03-26 | 2011-09-29 | Altair Engineering, Inc. | Inside-out led bulb |
US8454193B2 (en) | 2010-07-08 | 2013-06-04 | Ilumisys, Inc. | Independent modules for LED fluorescent light tube replacement |
EP2593714A2 (de) | 2010-07-12 | 2013-05-22 | iLumisys, Inc. | Leiterplattenhalterung für eine led-lichtröhre |
US8523394B2 (en) | 2010-10-29 | 2013-09-03 | Ilumisys, Inc. | Mechanisms for reducing risk of shock during installation of light tube |
US8870415B2 (en) | 2010-12-09 | 2014-10-28 | Ilumisys, Inc. | LED fluorescent tube replacement light with reduced shock hazard |
WO2013028965A2 (en) | 2011-08-24 | 2013-02-28 | Ilumisys, Inc. | Circuit board mount for led light |
WO2013131002A1 (en) | 2012-03-02 | 2013-09-06 | Ilumisys, Inc. | Electrical connector header for an led-based light |
US9163794B2 (en) | 2012-07-06 | 2015-10-20 | Ilumisys, Inc. | Power supply assembly for LED-based light tube |
US9271367B2 (en) | 2012-07-09 | 2016-02-23 | Ilumisys, Inc. | System and method for controlling operation of an LED-based light |
US9285084B2 (en) | 2013-03-14 | 2016-03-15 | Ilumisys, Inc. | Diffusers for LED-based lights |
US9267650B2 (en) | 2013-10-09 | 2016-02-23 | Ilumisys, Inc. | Lens for an LED-based light |
CN106063381A (zh) | 2014-01-22 | 2016-10-26 | 伊卢米斯公司 | 具有被寻址led的基于led的灯 |
US9510400B2 (en) | 2014-05-13 | 2016-11-29 | Ilumisys, Inc. | User input systems for an LED-based light |
US10161568B2 (en) | 2015-06-01 | 2018-12-25 | Ilumisys, Inc. | LED-based light with canted outer walls |
KR20200141817A (ko) * | 2019-06-11 | 2020-12-21 | 엘지디스플레이 주식회사 | 전자장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1525562A (en) * | 1975-08-19 | 1978-09-20 | Hawker Siddeley Aviation Ltd | Multi-element targets sensitive to incident radiation |
US4352948A (en) * | 1979-09-07 | 1982-10-05 | Massachusetts Institute Of Technology | High-intensity solid-state solar-cell device |
US4559695A (en) * | 1981-03-27 | 1985-12-24 | U.S. Philips Corporation | Method of manufacturing an infrared radiation imaging device |
GB2095905B (en) * | 1981-03-27 | 1985-01-16 | Philips Electronic Associated | Infra-red radiation imaging devices and methods for their manufacture |
US4629892A (en) * | 1982-12-22 | 1986-12-16 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Optically immersed detector assembly |
FR2544132B1 (fr) * | 1983-04-08 | 1986-11-21 | Telecommunications Sa | Detecteur photoconducteur en immersion optique |
JPS61182531A (ja) * | 1985-02-08 | 1986-08-15 | Matsushita Electric Ind Co Ltd | 二次元アレイ赤外検出器 |
GB2241605B (en) * | 1985-09-11 | 1992-01-29 | Philips Electronic Associated | Infrared photodiodes,arrays and their manufacture |
GB2240444B (en) * | 1985-12-20 | 1991-10-30 | Philips Electronic Associated | Imaging array devices and staring array imaging systems |
JPH01320438A (ja) * | 1988-06-22 | 1989-12-26 | Fujitsu Ltd | 赤外線検知装置 |
GB2248964A (en) * | 1990-10-17 | 1992-04-22 | Philips Electronic Associated | Plural-wavelength infrared detector devices |
-
1991
- 1991-07-29 GB GB919116307A patent/GB9116307D0/en active Pending
-
1992
- 1992-07-20 EP EP92202222A patent/EP0525876B1/de not_active Expired - Lifetime
- 1992-07-20 DE DE69210497T patent/DE69210497T2/de not_active Expired - Fee Related
- 1992-07-28 US US07/922,117 patent/US5306915A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69210497D1 (de) | 1996-06-13 |
EP0525876A1 (de) | 1993-02-03 |
GB9116307D0 (en) | 1991-11-06 |
EP0525876B1 (de) | 1996-05-08 |
US5306915A (en) | 1994-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |