DE69204925D1 - Verfahren und Vorrichtung zur Synthese von Diamanten aus der Dampfphase. - Google Patents

Verfahren und Vorrichtung zur Synthese von Diamanten aus der Dampfphase.

Info

Publication number
DE69204925D1
DE69204925D1 DE69204925T DE69204925T DE69204925D1 DE 69204925 D1 DE69204925 D1 DE 69204925D1 DE 69204925 T DE69204925 T DE 69204925T DE 69204925 T DE69204925 T DE 69204925T DE 69204925 D1 DE69204925 D1 DE 69204925D1
Authority
DE
Germany
Prior art keywords
diamonds
synthesis
vapor phase
vapor
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69204925T
Other languages
English (en)
Other versions
DE69204925T2 (de
Inventor
Akihiko Ikegawa
Naoji Fujimori
Masanori Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69204925D1 publication Critical patent/DE69204925D1/de
Application granted granted Critical
Publication of DE69204925T2 publication Critical patent/DE69204925T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/276—Diamond only using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/44—Plasma torches using an arc using more than one torch

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Combustion & Propulsion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Coating By Spraying Or Casting (AREA)
DE69204925T 1991-07-10 1992-07-08 Verfahren und Vorrichtung zur Synthese von Diamanten aus der Dampfphase. Expired - Lifetime DE69204925T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19710991 1991-07-10
JP22510091A JP3166226B2 (ja) 1991-07-10 1991-08-09 ダイヤモンドの製造法及び製造装置

Publications (2)

Publication Number Publication Date
DE69204925D1 true DE69204925D1 (de) 1995-10-26
DE69204925T2 DE69204925T2 (de) 1996-04-11

Family

ID=26510173

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69204925T Expired - Lifetime DE69204925T2 (de) 1991-07-10 1992-07-08 Verfahren und Vorrichtung zur Synthese von Diamanten aus der Dampfphase.

Country Status (3)

Country Link
EP (1) EP0522842B1 (de)
JP (1) JP3166226B2 (de)
DE (1) DE69204925T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2282390B (en) * 1993-09-23 1997-04-30 Opa Method for obtaining diamond and diamond-like films
WO1997018692A1 (fr) * 1995-11-13 1997-05-22 Ist Instant Surface Technology S.A. Generateur de plasma a quatre buses pour la formation d'un jet active
JP2002110399A (ja) * 2000-09-29 2002-04-12 Koike Sanso Kogyo Co Ltd トーチ間移行プラズマ装置
DE202007019184U1 (de) * 2007-09-11 2010-12-30 Maschinenfabrik Reinhausen Gmbh Vorrichtung zur Behandlung oder Beschichtung von Oberflächen
JP5091801B2 (ja) * 2008-08-18 2012-12-05 株式会社日本セラテック 複合トーチ型プラズマ発生装置
DE102009010497A1 (de) * 2008-12-19 2010-08-05 J-Fiber Gmbh Mehrdüsiger rohrförmiger Plasma-Abscheidebrenner zur Herstellung von Vorformen als Halbzeuge für optische Fasern
JP5396565B2 (ja) * 2011-07-12 2014-01-22 シンワ工業株式会社 アキシャルフィード型プラズマ溶射装置
JP2013101787A (ja) * 2011-11-07 2013-05-23 Pset Co Ltd プラズマ発生装置
WO2013152805A1 (en) * 2012-04-13 2013-10-17 European Space Agency Method and system for production and additive manufacturing of metals and alloys
RU2521581C2 (ru) * 2012-08-03 2014-06-27 Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) Способ получения наноалмазов при пиролизе метана в электрическом поле
CN107991272B (zh) * 2017-11-24 2020-05-01 中国地质大学（武汉） 一种便携式常压辉光放电微等离子体光谱仪及其实施方法

Also Published As

Publication number Publication date
JPH0687689A (ja) 1994-03-29
EP0522842A1 (de) 1993-01-13
EP0522842B1 (de) 1995-09-20
JP3166226B2 (ja) 2001-05-14
DE69204925T2 (de) 1996-04-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: WESER & KOLLEGEN, 81245 MUENCHEN

8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN