DE69132474T2 - Verfahren zur Verdrahtung eines Halbleiterbauelementes - Google Patents

Verfahren zur Verdrahtung eines Halbleiterbauelementes

Info

Publication number
DE69132474T2
DE69132474T2 DE69132474T DE69132474T DE69132474T2 DE 69132474 T2 DE69132474 T2 DE 69132474T2 DE 69132474 T DE69132474 T DE 69132474T DE 69132474 T DE69132474 T DE 69132474T DE 69132474 T2 DE69132474 T2 DE 69132474T2
Authority
DE
Germany
Prior art keywords
wiring
semiconductor device
insulating film
metallic substance
conductive metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132474T
Other languages
English (en)
Other versions
DE69132474D1 (de
Inventor
Shunsuke Inoue
Mitsutoshi Hasegawa
Nobuo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14373390A external-priority patent/JPH0437029A/ja
Priority claimed from JP14370190A external-priority patent/JPH0437133A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69132474D1 publication Critical patent/DE69132474D1/de
Publication of DE69132474T2 publication Critical patent/DE69132474T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69132474T 1990-05-31 1991-05-22 Verfahren zur Verdrahtung eines Halbleiterbauelementes Expired - Fee Related DE69132474T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14373390A JPH0437029A (ja) 1990-05-31 1990-05-31 半導体装置の配線形成方法
JP14370190A JPH0437133A (ja) 1990-06-01 1990-06-01 半導体装置の配線形成方法

Publications (2)

Publication Number Publication Date
DE69132474D1 DE69132474D1 (de) 2000-12-28
DE69132474T2 true DE69132474T2 (de) 2001-05-03

Family

ID=26475367

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132474T Expired - Fee Related DE69132474T2 (de) 1990-05-31 1991-05-22 Verfahren zur Verdrahtung eines Halbleiterbauelementes

Country Status (3)

Country Link
EP (1) EP0459700B1 (de)
AT (1) ATE197746T1 (de)
DE (1) DE69132474T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2406006C (en) 2000-05-04 2011-02-15 Btg International Limited Particle deposition apparatus and method for forming nanostructures
DE102004028031A1 (de) * 2004-06-09 2006-01-05 Infineon Technologies Ag Selektives Beschichtungsverfahren und Dünnschichtsystem

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3483982D1 (de) * 1983-06-29 1991-02-28 Siemens Ag Verfahren zur herstellung einer elektrisch leitfaehigen verbindung und vorrichtung zur durchfuehrung eines solchen verfahrens.
JPS61214539A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 配線形成方法
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
JPS62281349A (ja) * 1986-05-29 1987-12-07 Seiko Instr & Electronics Ltd 金属パタ−ン膜の形成方法及びその装置
JPH01217946A (ja) * 1988-02-26 1989-08-31 Hitachi Ltd 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
EP0459700A2 (de) 1991-12-04
ATE197746T1 (de) 2000-12-15
EP0459700B1 (de) 2000-11-22
EP0459700A3 (en) 1992-10-07
DE69132474D1 (de) 2000-12-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee