DE69129311D1 - Photodetektor - Google Patents

Photodetektor

Info

Publication number
DE69129311D1
DE69129311D1 DE69129311T DE69129311T DE69129311D1 DE 69129311 D1 DE69129311 D1 DE 69129311D1 DE 69129311 T DE69129311 T DE 69129311T DE 69129311 T DE69129311 T DE 69129311T DE 69129311 D1 DE69129311 D1 DE 69129311D1
Authority
DE
Germany
Prior art keywords
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69129311T
Other languages
English (en)
Other versions
DE69129311T2 (de
Inventor
Akira Shimizu
Kazuhito Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2045086A external-priority patent/JP2873851B2/ja
Priority claimed from JP3004767A external-priority patent/JPH04236467A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69129311D1 publication Critical patent/DE69129311D1/de
Publication of DE69129311T2 publication Critical patent/DE69129311T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
DE69129311T 1990-02-26 1991-02-25 Photodetektor Expired - Fee Related DE69129311T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2045086A JP2873851B2 (ja) 1990-02-26 1990-02-26 光検出器
JP3004767A JPH04236467A (ja) 1991-01-19 1991-01-19 半導体積層構造及び光検出器

Publications (2)

Publication Number Publication Date
DE69129311D1 true DE69129311D1 (de) 1998-06-04
DE69129311T2 DE69129311T2 (de) 1998-10-08

Family

ID=26338602

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69129311T Expired - Fee Related DE69129311T2 (de) 1990-02-26 1991-02-25 Photodetektor

Country Status (3)

Country Link
US (1) US5321275A (de)
EP (1) EP0444581B1 (de)
DE (1) DE69129311T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3125332B2 (ja) * 1991-06-21 2001-01-15 ソニー株式会社 量子ドットトンネル素子とそれを用いた情報処理装置及び情報処理方法
US5459332A (en) * 1994-03-31 1995-10-17 The United States Of America As Represented By The Secretary Of The Navy Semiconductor photodetector device
FR2732844B1 (fr) * 1995-04-05 1997-06-20 France Telecom Composant optique de demultiplexage temporel
JPH10144950A (ja) * 1996-11-15 1998-05-29 Furukawa Electric Co Ltd:The 半導体受光デバイス
US6020226A (en) * 1998-04-14 2000-02-01 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal process for enhancement mode field-effect transistor
US6064782A (en) * 1998-05-22 2000-05-16 Lucent Technologies Inc. Edge receptive photodetector devices
US6260168B1 (en) * 1998-09-23 2001-07-10 Glenayre Electronics, Inc. Paging system having optional forward error correcting code transmission at the data link layer
US6731585B2 (en) * 2000-03-03 2004-05-04 Matsushita Electric Industrial Co., Ltd. Optical pick-up head with semiconductor laser
US20110204483A1 (en) * 2004-06-25 2011-08-25 Mcnally Patrick Electroluminescent device for the production of ultra-violet light
FR2973945B1 (fr) * 2011-04-11 2013-05-10 Centre Nat Rech Scient Heterostructure semi-conductrice et cellule photovoltaïque comprenant une telle heterostructure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745452A (en) * 1984-09-24 1988-05-17 Massachusetts Institute Of Technology Tunneling transfer devices
JPH0821708B2 (ja) * 1985-11-14 1996-03-04 株式会社豊田中央研究所 半導体素子
US4761620A (en) * 1986-12-03 1988-08-02 American Telephone And Telegraph Company, At&T Bell Laboratories Optical reading of quantum well device
US4749850A (en) * 1987-04-27 1988-06-07 American Telephone And Telegraph Company High speed quantum well optical detector
US4873555A (en) * 1987-06-08 1989-10-10 University Of Pittsburgh Of The Commonwealth System Of Higher Education Intraband quantum well photodetector and associated method
US4961198A (en) * 1988-01-14 1990-10-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP2928532B2 (ja) * 1988-05-06 1999-08-03 株式会社日立製作所 量子干渉光素子
US5063419A (en) * 1988-11-15 1991-11-05 The United States Of America As Represented By The Secretary Of The Navy Heterostructure device useable as a far infrared photodetector
EP1429585A4 (de) * 2001-07-16 2005-07-27 Harison Toshiba Lighting Corp Betriebseinrichtung für eine entladungslampe mit dielektrischer barriere

Also Published As

Publication number Publication date
DE69129311T2 (de) 1998-10-08
EP0444581A1 (de) 1991-09-04
US5321275A (en) 1994-06-14
EP0444581B1 (de) 1998-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee