DE69125577T2 - Ablenksystem für einen Strahl geladener Teilchen - Google Patents

Ablenksystem für einen Strahl geladener Teilchen

Info

Publication number
DE69125577T2
DE69125577T2 DE69125577T DE69125577T DE69125577T2 DE 69125577 T2 DE69125577 T2 DE 69125577T2 DE 69125577 T DE69125577 T DE 69125577T DE 69125577 T DE69125577 T DE 69125577T DE 69125577 T2 DE69125577 T2 DE 69125577T2
Authority
DE
Germany
Prior art keywords
charged particles
deflection system
deflection
charged
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125577T
Other languages
English (en)
Other versions
DE69125577D1 (de
Inventor
Keiichi Betsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69125577D1 publication Critical patent/DE69125577D1/de
Publication of DE69125577T2 publication Critical patent/DE69125577T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
DE69125577T 1990-11-28 1991-11-28 Ablenksystem für einen Strahl geladener Teilchen Expired - Fee Related DE69125577T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2327499A JP2555775B2 (ja) 1990-11-28 1990-11-28 荷電粒子ビーム偏向装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69125577D1 DE69125577D1 (de) 1997-05-15
DE69125577T2 true DE69125577T2 (de) 1997-07-17

Family

ID=18199829

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125577T Expired - Fee Related DE69125577T2 (de) 1990-11-28 1991-11-28 Ablenksystem für einen Strahl geladener Teilchen

Country Status (4)

Country Link
US (1) US5214289A (de)
EP (1) EP0488707B1 (de)
JP (1) JP2555775B2 (de)
DE (1) DE69125577T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528048A (en) * 1994-03-15 1996-06-18 Fujitsu Limited Charged particle beam exposure system and method
US5486697A (en) * 1994-11-14 1996-01-23 California Institute Of Technology Array of micro-machined mass energy micro-filters for charged particles
US5565681A (en) * 1995-03-23 1996-10-15 Applied Materials, Inc. Ion energy analyzer with an electrically controlled geometric filter
US5986258A (en) * 1995-10-25 1999-11-16 Bruker Daltonics, Inc. Extended Bradbury-Nielson gate
FR2762713A1 (fr) * 1997-04-25 1998-10-30 Commissariat Energie Atomique Microdispositif pour generer un champ multipolaire, en particulier pour filtrer ou devier ou focaliser des particules chargees
US6052653A (en) * 1997-07-11 2000-04-18 Solid State Measurements, Inc. Spreading resistance profiling system
US6504393B1 (en) 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
KR20000005870A (ko) * 1998-06-11 2000-01-25 히로시 오우라 전자빔노출장치를위한편향개구어레이를제작하는방법,상기개구어레이를제작하기위한습식에칭방법및장치,및상기개구어레이를갖는전자빔노출장치
US6252412B1 (en) 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6818911B2 (en) * 2002-04-10 2004-11-16 Canon Kabushiki Kaisha Array structure and method of manufacturing the same, charged particle beam exposure apparatus, and device manufacturing method
US6924653B2 (en) * 2002-08-26 2005-08-02 Micron Technology, Inc. Selectively configurable microelectronic probes
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
US6953938B2 (en) * 2002-10-03 2005-10-11 Canon Kabushiki Kaisha Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus
JP4805686B2 (ja) * 2006-02-09 2011-11-02 株式会社ニューフレアテクノロジー 電子線描画装置用偏向器及び電子線描画装置
JP5048283B2 (ja) * 2006-07-20 2012-10-17 キヤノン株式会社 偏向器アレイ、描画装置およびデバイス製造方法
NL1036912C2 (en) * 2009-04-29 2010-11-01 Mapper Lithography Ip Bv Charged particle optical system comprising an electrostatic deflector.
TWI497557B (zh) 2009-04-29 2015-08-21 Mapper Lithography Ip Bv 包含靜電偏轉器的帶電粒子光學系統
JP6103497B2 (ja) * 2012-05-25 2017-03-29 株式会社Ｐａｒａｍ 電子ビーム描画装置
US9330881B2 (en) * 2014-09-01 2016-05-03 Nuflare Technology, Inc. Blanking device for multi charged particle beams, and multi charged particle beam writing apparatus
JP6553973B2 (ja) * 2014-09-01 2019-07-31 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム用のブランキング装置及びマルチ荷電粒子ビーム描画装置
JP5816739B1 (ja) * 2014-12-02 2015-11-18 株式会社ニューフレアテクノロジー マルチビームのブランキングアパーチャアレイ装置、及びマルチビームのブランキングアパーチャアレイ装置の製造方法
JP6709109B2 (ja) * 2016-05-31 2020-06-10 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム照射装置
JP6720861B2 (ja) * 2016-12-28 2020-07-08 株式会社ニューフレアテクノロジー マルチビーム用アパーチャセット及びマルチ荷電粒子ビーム描画装置
CN111108582A (zh) 2017-08-08 2020-05-05 Asml荷兰有限公司 带电粒子阻挡元件、包括这样的元件的曝光装置以及使用这样的曝光装置的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844717A (ja) * 1981-09-11 1983-03-15 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
DE3504705A1 (de) * 1985-02-12 1986-08-14 Siemens AG, 1000 Berlin und 8000 München Aperturblende mit zellenfoermiger mehrlochstruktur und austastelektroden zur erzeugung einer mehrzahl von individuell austastbaren korpuskularstrahlsonden fuer ein lithografiegeraet
EP0289885A1 (de) * 1987-05-08 1988-11-09 Siemens Aktiengesellschaft Blendensystem zur Erzeugung mehrerer Teilchensonden mit veränderbarem Querschnitt
US4980567A (en) * 1988-03-30 1990-12-25 Fujitsu Limited Charged particle beam exposure system using line beams
JP2901246B2 (ja) * 1988-03-30 1999-06-07 富士通株式会社 荷電粒子ビーム露光装置
US4994336A (en) * 1988-05-31 1991-02-19 Siemens Aktiengesellschaft Method for manufacturing a control plate for a lithographic device
JP2600805B2 (ja) * 1988-06-03 1997-04-16 富士通株式会社 電子ビーム露光装置及び方法
JP2523931B2 (ja) * 1990-04-16 1996-08-14 富士通株式会社 ブランキングアパ―チャアレ―の製造方法

Also Published As

Publication number Publication date
EP0488707A3 (en) 1992-07-29
EP0488707A2 (de) 1992-06-03
JPH04196409A (ja) 1992-07-16
US5214289A (en) 1993-05-25
DE69125577D1 (de) 1997-05-15
JP2555775B2 (ja) 1996-11-20
EP0488707B1 (de) 1997-04-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee