DE69123709D1 - Optoelektronische integrierte Schaltung mit einem Langwellensender - Google Patents

Optoelektronische integrierte Schaltung mit einem Langwellensender

Info

Publication number
DE69123709D1
DE69123709D1 DE69123709T DE69123709T DE69123709D1 DE 69123709 D1 DE69123709 D1 DE 69123709D1 DE 69123709 T DE69123709 T DE 69123709T DE 69123709 T DE69123709 T DE 69123709T DE 69123709 D1 DE69123709 D1 DE 69123709D1
Authority
DE
Germany
Prior art keywords
long
integrated circuit
wave transmitter
optoelectronic integrated
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123709T
Other languages
English (en)
Other versions
DE69123709T2 (de
Inventor
Yutaka Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69123709D1 publication Critical patent/DE69123709D1/de
Publication of DE69123709T2 publication Critical patent/DE69123709T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)
DE69123709T 1990-11-19 1991-09-04 Optoelektronische integrierte Schaltung mit einem Langwellensender Expired - Fee Related DE69123709T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2316334A JPH04184973A (ja) 1990-11-19 1990-11-19 長波長光送信ｏｅｉｃ

Publications (2)

Publication Number Publication Date
DE69123709D1 true DE69123709D1 (de) 1997-01-30
DE69123709T2 DE69123709T2 (de) 1997-04-17

Family

ID=18075968

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123709T Expired - Fee Related DE69123709T2 (de) 1990-11-19 1991-09-04 Optoelektronische integrierte Schaltung mit einem Langwellensender

Country Status (5)

Country Link
US (1) US5311046A (de)
EP (1) EP0487192B1 (de)
JP (1) JPH04184973A (de)
CA (1) CA2051453C (de)
DE (1) DE69123709T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818078A (en) * 1994-08-29 1998-10-06 Fujitsu Limited Semiconductor device having a regrowth crystal region
JP3501676B2 (ja) * 1999-05-07 2004-03-02 松下電器産業株式会社 半導体レーザ装置の製造方法
US6545335B1 (en) * 1999-12-27 2003-04-08 Xerox Corporation Structure and method for electrical isolation of optoelectronic integrated circuits
JP2008515201A (ja) * 2004-09-23 2008-05-08 セミネックス・コーポレーション 高エネルギー赤外半導体ダイオード発光デバイス
WO2010022038A2 (en) * 2008-08-19 2010-02-25 University Of Florida Research Foundation, Inc. Pressure sensing
CN104377547B (zh) * 2014-11-19 2017-07-21 北京工业大学 一种GaN基HEMT和LD单片集成的直接调制半导体激光器结构及其生长过程
GB2558308B (en) 2016-12-30 2022-01-19 Lumentum Tech Uk Limited Electrical isolation in photonic integrated circuits
DE102017126446A1 (de) 2017-11-10 2019-05-16 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
GB2592208B (en) * 2020-02-19 2022-04-06 Plessey Semiconductors Ltd High resolution monolithic RGB arrays

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670681A (en) * 1979-11-14 1981-06-12 Hitachi Ltd Semiconductor luminous element
JPS6132588A (ja) * 1984-07-25 1986-02-15 Matsushita Electric Ind Co Ltd 半導体装置
EP0228624B1 (de) * 1985-12-19 1993-04-21 Sumitomo Electric Industries, Ltd. Feldeffekttransistor
FR2592739B1 (fr) * 1986-01-06 1988-03-18 Brillouet Francois Structure semi-conductrice monolithique d'un laser et d'un transistor a effet de champ et son procede de fabrication
JPS62244167A (ja) * 1986-04-17 1987-10-24 Fujitsu Ltd 光，電子半導体集積回路
JPS63150982A (ja) * 1986-12-12 1988-06-23 Fujitsu Ltd 半導体発光装置
DE3709302C2 (de) * 1987-03-20 1998-07-02 Daimler Benz Ag Monolithisch integrierte Senderanordnung sowie Verfahren zu ihrer Herstellung
JPS649684A (en) * 1987-07-02 1989-01-12 Matsushita Electric Ind Co Ltd Semiconductor device
US4774555A (en) * 1987-08-07 1988-09-27 Siemens Corporate Research And Support, Inc. Power hemt structure
US4996163A (en) * 1988-02-29 1991-02-26 Sumitomo Electric Industries, Ltd. Method for producing an opto-electronic integrated circuit
DE69030831T2 (de) * 1989-03-10 1998-01-15 Canon Kk Photodetektor mit wellenlängenselektivem optischem Koppler
US5003359A (en) * 1989-12-29 1991-03-26 David Sarnoff Research Center, Inc. Optoelectronic integrated circuit

Also Published As

Publication number Publication date
EP0487192A3 (en) 1992-12-02
JPH04184973A (ja) 1992-07-01
EP0487192B1 (de) 1996-12-18
US5311046A (en) 1994-05-10
DE69123709T2 (de) 1997-04-17
CA2051453C (en) 1996-03-05
CA2051453A1 (en) 1992-05-20
EP0487192A2 (de) 1992-05-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee