DE69122526T2 - Ionenstrahl-Steuersystem - Google Patents

Ionenstrahl-Steuersystem

Info

Publication number
DE69122526T2
DE69122526T2 DE69122526T DE69122526T DE69122526T2 DE 69122526 T2 DE69122526 T2 DE 69122526T2 DE 69122526 T DE69122526 T DE 69122526T DE 69122526 T DE69122526 T DE 69122526T DE 69122526 T2 DE69122526 T2 DE 69122526T2
Authority
DE
Germany
Prior art keywords
control system
ion beam
beam control
ion
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69122526T
Other languages
English (en)
Other versions
DE69122526D1 (de
Inventor
Victor Maurice Benveniste
Edward Kirby Mcintyre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Publication of DE69122526D1 publication Critical patent/DE69122526D1/de
Application granted granted Critical
Publication of DE69122526T2 publication Critical patent/DE69122526T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69122526T 1990-03-01 1991-02-28 Ionenstrahl-Steuersystem Expired - Fee Related DE69122526T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/487,158 US5023458A (en) 1989-01-04 1990-03-01 Ion beam control system

Publications (2)

Publication Number Publication Date
DE69122526D1 DE69122526D1 (de) 1996-11-14
DE69122526T2 true DE69122526T2 (de) 1997-05-15

Family

ID=23934651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69122526T Expired - Fee Related DE69122526T2 (de) 1990-03-01 1991-02-28 Ionenstrahl-Steuersystem

Country Status (5)

Country Link
US (1) US5023458A (de)
EP (1) EP0444935B1 (de)
JP (1) JP2946433B2 (de)
KR (1) KR960014524B1 (de)
DE (1) DE69122526T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218210A (en) * 1992-02-18 1993-06-08 Eaton Corporation Broad beam flux density control
US5661308A (en) * 1996-05-30 1997-08-26 Eaton Corporation Method and apparatus for ion formation in an ion implanter
US20040051053A1 (en) * 2002-05-22 2004-03-18 Barletta William A. Universal pattern generator with multiplex addressing
JP4443816B2 (ja) * 2002-09-06 2010-03-31 シャープ株式会社 イオンドーピング装置及びイオンドーピング装置用多孔電極
KR100653999B1 (ko) 2005-06-29 2006-12-06 주식회사 하이닉스반도체 와이드빔을 이용한 불균일 이온주입장치 및 이온주입방법
US7446326B2 (en) * 2005-08-31 2008-11-04 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implanter productivity
US7897945B2 (en) * 2008-09-25 2011-03-01 Twin Creeks Technologies, Inc. Hydrogen ion implanter using a broad beam source

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076567A5 (de) * 1970-01-20 1971-10-15 Commissariat Energie Atomique
US3795833A (en) * 1972-05-25 1974-03-05 Hughes Aircraft Co Ion beam deflection system
US3999097A (en) * 1975-06-30 1976-12-21 International Business Machines Corporation Ion implantation apparatus utilizing multiple aperture source plate and single aperture accel-decel system
DE3376921D1 (en) * 1982-09-10 1988-07-07 Nippon Telegraph & Telephone Ion shower apparatus
US4578589A (en) * 1983-08-15 1986-03-25 Applied Materials, Inc. Apparatus and methods for ion implantation
US4522657A (en) * 1983-10-20 1985-06-11 Westinghouse Electric Corp. Low temperature process for annealing shallow implanted N+/P junctions
US4523971A (en) * 1984-06-28 1985-06-18 International Business Machines Corporation Programmable ion beam patterning system
DE3504714A1 (de) * 1985-02-12 1986-08-14 Siemens AG, 1000 Berlin und 8000 München Lithografiegeraet zur erzeugung von mikrostrukturen
DE3601632A1 (de) * 1986-01-21 1987-07-23 Leybold Heraeus Gmbh & Co Kg Verfahren zum herstellen von extraktionsgittern fuer ionenquellen und durch das verfahren hergestellte extraktionsgitter
JPS6438959A (en) * 1987-08-04 1989-02-09 Mitsubishi Electric Corp Ion beam neutralization device

Also Published As

Publication number Publication date
JPH04230942A (ja) 1992-08-19
JP2946433B2 (ja) 1999-09-06
US5023458A (en) 1991-06-11
EP0444935B1 (de) 1996-10-09
EP0444935A3 (en) 1992-02-19
DE69122526D1 (de) 1996-11-14
EP0444935A2 (de) 1991-09-04
KR960014524B1 (ko) 1996-10-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AXCELIS TECHNOLOGIES, INC., BEVERLY, MASS., US

8339 Ceased/non-payment of the annual fee