DE69122171D1 - Ohmische Kontaktelektroden für N-Typ halbleitendes kubisches Bor-Nitrat - Google Patents

Ohmische Kontaktelektroden für N-Typ halbleitendes kubisches Bor-Nitrat

Info

Publication number
DE69122171D1
DE69122171D1 DE69122171T DE69122171T DE69122171D1 DE 69122171 D1 DE69122171 D1 DE 69122171D1 DE 69122171 T DE69122171 T DE 69122171T DE 69122171 T DE69122171 T DE 69122171T DE 69122171 D1 DE69122171 D1 DE 69122171D1
Authority
DE
Germany
Prior art keywords
ohmic contact
cubic boron
contact electrodes
type semiconducting
boron nitrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69122171T
Other languages
English (en)
Other versions
DE69122171T2 (de
Inventor
Tadashi Tomikawa
Tunenobu Kimoto
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2134722A external-priority patent/JPH0429377A/ja
Priority claimed from JP13472090A external-priority patent/JP2841717B2/ja
Priority claimed from JP13472390A external-priority patent/JP2841718B2/ja
Priority claimed from JP2134721A external-priority patent/JPH0429376A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69122171D1 publication Critical patent/DE69122171D1/de
Application granted granted Critical
Publication of DE69122171T2 publication Critical patent/DE69122171T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/932—Boron nitride semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69122171T 1990-05-24 1991-05-24 Ohmische Kontaktelektroden für N-Typ halbleitendes kubisches Bor-Nitrat Expired - Fee Related DE69122171T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2134722A JPH0429377A (ja) 1990-05-24 1990-05-24 ｎ型半導体立方晶窒化ホウ素のオーミツク電極
JP13472090A JP2841717B2 (ja) 1990-05-24 1990-05-24 ｎ型半導体立方晶窒化ホウ素のオーミツク電極
JP13472390A JP2841718B2 (ja) 1990-05-24 1990-05-24 ｎ型半導体立方晶窒化ホウ素のオーミツク電極
JP2134721A JPH0429376A (ja) 1990-05-24 1990-05-24 ｎ型半導体立方晶窒化ホウ素のオーミツク電極

Publications (2)

Publication Number Publication Date
DE69122171D1 true DE69122171D1 (de) 1996-10-24
DE69122171T2 DE69122171T2 (de) 1997-01-30

Family

ID=27471855

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69122171T Expired - Fee Related DE69122171T2 (de) 1990-05-24 1991-05-24 Ohmische Kontaktelektroden für N-Typ halbleitendes kubisches Bor-Nitrat

Country Status (3)

Country Link
US (3) US5285109A (de)
EP (1) EP0458353B1 (de)
DE (1) DE69122171T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0458353B1 (de) * 1990-05-24 1996-09-18 Sumitomo Electric Industries, Ltd. Ohmische Kontaktelektroden für N-Typ halbleitendes kubisches Bor-Nitrat
JPH0697690B2 (ja) * 1992-09-28 1994-11-30 科学技術庁無機材質研究所長 オーム性電極を備えたｃＢＮ半導体装置とその製造方法
JP2942452B2 (ja) * 1993-10-21 1999-08-30 財団法人地球環境産業技術研究機構 ｎ型半導体立方晶窒化ホウ素のオ−ミック電極およびその形成方法
JPH0832115A (ja) 1994-07-19 1996-02-02 Sharp Corp 電極構造およびその製造方法
US5834374A (en) * 1994-09-30 1998-11-10 International Business Machines Corporation Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates
SE9600199D0 (sv) * 1996-01-19 1996-01-19 Abb Research Ltd A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer
JP3191752B2 (ja) * 1996-12-26 2001-07-23 松下電器産業株式会社 ニッケル−水素二次電池およびその電極の製造方法
US5977636A (en) * 1997-01-17 1999-11-02 Micron Technology, Inc. Method of forming an electrically conductive contact plug, method of forming a reactive or diffusion barrier layer over a substrate, integrated circuitry, and method of forming a layer of titanium boride
KR100366372B1 (ko) * 2000-05-08 2002-12-31 한국과학기술연구원 산화아연 산화물 반도체의 발광 다이오드와 레이저 다이오드용 오믹 접촉 금속 박막의 제조 방법
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7238970B2 (en) * 2003-10-30 2007-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US7452740B2 (en) * 2003-12-10 2008-11-18 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof
US7964490B2 (en) * 2008-12-31 2011-06-21 Intel Corporation Methods of forming nickel sulfide film on a semiconductor device
GB2526951B (en) 2011-11-23 2016-04-20 Acorn Tech Inc Improving metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
KR102188719B1 (ko) * 2014-05-27 2020-12-08 삼성전자주식회사 도전성 소재 및 전자 소자
CN105609412A (zh) * 2016-03-23 2016-05-25 云南大学 一种快速退火制备Al-Si+欧姆接触的方法
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
DE112017005855T5 (de) 2016-11-18 2019-08-01 Acorn Technologies, Inc. Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe
JP7138714B2 (ja) * 2017-10-16 2022-09-16 キング・アブドゥッラー・ユニバーシティ・オブ・サイエンス・アンド・テクノロジー 窒化ホウ素合金接触層を有するｉｉｉ族窒化物半導体デバイス及び製造方法
CN109273357B (zh) * 2018-09-28 2021-03-23 中科芯电半导体科技（北京）有限公司 改善低掺杂浓度材料表面欧姆接触的方法及材料
CN115312646A (zh) * 2019-01-17 2022-11-08 泉州三安半导体科技有限公司 一种半导体发光元件

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271271A (ja) * 1985-09-24 1987-04-01 Sharp Corp 炭化珪素半導体の電極構造
US5006914A (en) * 1988-12-02 1991-04-09 Advanced Technology Materials, Inc. Single crystal semiconductor substrate articles and semiconductor devices comprising same
US5030583A (en) * 1988-12-02 1991-07-09 Advanced Technolgy Materials, Inc. Method of making single crystal semiconductor substrate articles and semiconductor device
JPH03137081A (ja) * 1989-10-23 1991-06-11 Sumitomo Electric Ind Ltd ｐ型ｃＢＮのオーム性電極形成方法
JPH03167877A (ja) * 1989-11-28 1991-07-19 Sumitomo Electric Ind Ltd ｎ型立方晶窒化硼素のオーム性電極及びその形成方法
US5091208A (en) * 1990-03-05 1992-02-25 Wayne State University Novel susceptor for use in chemical vapor deposition apparatus and its method of use
EP0458353B1 (de) * 1990-05-24 1996-09-18 Sumitomo Electric Industries, Ltd. Ohmische Kontaktelektroden für N-Typ halbleitendes kubisches Bor-Nitrat

Also Published As

Publication number Publication date
EP0458353A3 (en) 1992-04-08
US5298461A (en) 1994-03-29
US5285109A (en) 1994-02-08
EP0458353A2 (de) 1991-11-27
EP0458353B1 (de) 1996-09-18
US5422500A (en) 1995-06-06
DE69122171T2 (de) 1997-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee