DE69007358D1 - Ohmische Kontaktelektroden für P-Typ-Halbleiter-Diamanten. - Google Patents
Ohmische Kontaktelektroden für P-Typ-Halbleiter-Diamanten.Info
- Publication number
- DE69007358D1 DE69007358D1 DE90112933T DE69007358T DE69007358D1 DE 69007358 D1 DE69007358 D1 DE 69007358D1 DE 90112933 T DE90112933 T DE 90112933T DE 69007358 T DE69007358 T DE 69007358T DE 69007358 D1 DE69007358 D1 DE 69007358D1
- Authority
- DE
- Germany
- Prior art keywords
- type semiconductor
- ohmic contact
- contact electrodes
- semiconductor diamonds
- diamonds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010432 diamond Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
- H01L21/043—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1174373A JP2765067B2 (ja) | 1989-07-06 | 1989-07-06 | P型半導体ダイヤモンドのオーミツク接続電極 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69007358D1 true DE69007358D1 (de) | 1994-04-21 |
DE69007358T2 DE69007358T2 (de) | 1994-07-14 |
Family
ID=15977481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1990607358 Expired - Fee Related DE69007358T2 (de) | 1989-07-06 | 1990-07-06 | Ohmische Kontaktelektroden für P-Typ-Halbleiter-Diamanten. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0406882B1 (de) |
JP (1) | JP2765067B2 (de) |
DE (1) | DE69007358T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5382808A (en) * | 1993-05-14 | 1995-01-17 | Kobe Steel, Usa Inc. | Metal boride ohmic contact on diamond and method for making same |
JP3309887B2 (ja) * | 1994-08-17 | 2002-07-29 | 住友電気工業株式会社 | 半導体装置 |
GB0819001D0 (en) * | 2008-10-16 | 2008-11-26 | Diamond Detectors Ltd | Contacts on diamond |
GB201020326D0 (en) * | 2010-12-01 | 2011-01-12 | Diamond Microwave Devices Ltd | A field effect transistor |
-
1989
- 1989-07-06 JP JP1174373A patent/JP2765067B2/ja not_active Expired - Fee Related
-
1990
- 1990-07-06 EP EP19900112933 patent/EP0406882B1/de not_active Expired - Lifetime
- 1990-07-06 DE DE1990607358 patent/DE69007358T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0338877A (ja) | 1991-02-19 |
EP0406882A2 (de) | 1991-01-09 |
JP2765067B2 (ja) | 1998-06-11 |
EP0406882B1 (de) | 1994-03-16 |
EP0406882A3 (en) | 1991-02-27 |
DE69007358T2 (de) | 1994-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |