DE69007358D1 - Ohmische Kontaktelektroden für P-Typ-Halbleiter-Diamanten. - Google Patents

Ohmische Kontaktelektroden für P-Typ-Halbleiter-Diamanten.

Info

Publication number
DE69007358D1
DE69007358D1 DE90112933T DE69007358T DE69007358D1 DE 69007358 D1 DE69007358 D1 DE 69007358D1 DE 90112933 T DE90112933 T DE 90112933T DE 69007358 T DE69007358 T DE 69007358T DE 69007358 D1 DE69007358 D1 DE 69007358D1
Authority
DE
Germany
Prior art keywords
type semiconductor
ohmic contact
contact electrodes
semiconductor diamonds
diamonds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90112933T
Other languages
English (en)
Other versions
DE69007358T2 (de
Inventor
Tunenobu Kimoto
Tadashi Tomikawa
Shoji Nakagama
Masayuki Ishii
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69007358D1 publication Critical patent/DE69007358D1/de
Publication of DE69007358T2 publication Critical patent/DE69007358T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/0425—Making electrodes
    • H01L21/043—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
DE1990607358 1989-07-06 1990-07-06 Ohmische Kontaktelektroden für P-Typ-Halbleiter-Diamanten. Expired - Fee Related DE69007358T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1174373A JP2765067B2 (ja) 1989-07-06 1989-07-06 Ｐ型半導体ダイヤモンドのオーミツク接続電極

Publications (2)

Publication Number Publication Date
DE69007358D1 true DE69007358D1 (de) 1994-04-21
DE69007358T2 DE69007358T2 (de) 1994-07-14

Family

ID=15977481

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990607358 Expired - Fee Related DE69007358T2 (de) 1989-07-06 1990-07-06 Ohmische Kontaktelektroden für P-Typ-Halbleiter-Diamanten.

Country Status (3)

Country Link
EP (1) EP0406882B1 (de)
JP (1) JP2765067B2 (de)
DE (1) DE69007358T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5382808A (en) * 1993-05-14 1995-01-17 Kobe Steel, Usa Inc. Metal boride ohmic contact on diamond and method for making same
JP3309887B2 (ja) * 1994-08-17 2002-07-29 住友電気工業株式会社 半導体装置
GB0819001D0 (en) 2008-10-16 2008-11-26 Diamond Detectors Ltd Contacts on diamond
GB201020326D0 (en) * 2010-12-01 2011-01-12 Diamond Microwave Devices Ltd A field effect transistor

Also Published As

Publication number Publication date
EP0406882A3 (en) 1991-02-27
EP0406882A2 (de) 1991-01-09
EP0406882B1 (de) 1994-03-16
DE69007358T2 (de) 1994-07-14
JPH0338877A (ja) 1991-02-19
JP2765067B2 (ja) 1998-06-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee