DE69121306T2 - Hallanordnung - Google Patents
HallanordnungInfo
- Publication number
- DE69121306T2 DE69121306T2 DE69121306T DE69121306T DE69121306T2 DE 69121306 T2 DE69121306 T2 DE 69121306T2 DE 69121306 T DE69121306 T DE 69121306T DE 69121306 T DE69121306 T DE 69121306T DE 69121306 T2 DE69121306 T2 DE 69121306T2
- Authority
- DE
- Germany
- Prior art keywords
- hall arrangement
- hall
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2131590A JP2884707B2 (ja) | 1990-05-21 | 1990-05-21 | ホール素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69121306D1 DE69121306D1 (de) | 1996-09-19 |
DE69121306T2 true DE69121306T2 (de) | 1997-01-02 |
Family
ID=15061611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69121306T Expired - Fee Related DE69121306T2 (de) | 1990-05-21 | 1991-04-24 | Hallanordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5162886A (de) |
EP (1) | EP0458466B1 (de) |
JP (1) | JP2884707B2 (de) |
DE (1) | DE69121306T2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5639551A (en) * | 1993-02-10 | 1997-06-17 | California Institute Of Technology | Low pressure growth of cubic boron nitride films |
US5469424A (en) * | 1993-02-23 | 1995-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device utilizing a material capable of storing information which is readable by illumination |
JPH0794303A (ja) * | 1993-05-04 | 1995-04-07 | Kobe Steel Ltd | 高配向性ダイヤモンド薄膜サーミスタ |
JPH0786311A (ja) * | 1993-05-14 | 1995-03-31 | Kobe Steel Ltd | 高配向性ダイヤモンド薄膜電界効果トランジスタ |
JPH0794805A (ja) * | 1993-05-14 | 1995-04-07 | Kobe Steel Ltd | 高配向性ダイヤモンド薄膜磁気検出素子及び磁気検出装置 |
US5371383A (en) * | 1993-05-14 | 1994-12-06 | Kobe Steel Usa Inc. | Highly oriented diamond film field-effect transistor |
JP3549227B2 (ja) * | 1993-05-14 | 2004-08-04 | 株式会社神戸製鋼所 | 高配向性ダイヤモンド薄膜 |
US5442199A (en) * | 1993-05-14 | 1995-08-15 | Kobe Steel Usa, Inc. | Diamond hetero-junction rectifying element |
JP3755904B2 (ja) * | 1993-05-14 | 2006-03-15 | 株式会社神戸製鋼所 | ダイヤモンド整流素子 |
US5468688A (en) * | 1993-11-01 | 1995-11-21 | Georgia Tech Research Corporation | Process for the low temperature creation of nitride films on semiconductors |
US5399247A (en) * | 1993-12-22 | 1995-03-21 | Eastman Kodak Company | Method of electrolysis employing a doped diamond anode to oxidize solutes in wastewater |
US5536953A (en) * | 1994-03-08 | 1996-07-16 | Kobe Steel Usa | Wide bandgap semiconductor device including lightly doped active region |
US5670777A (en) * | 1994-04-14 | 1997-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Photosensitive device and two frequency driving method thereof |
US5446307A (en) * | 1994-11-04 | 1995-08-29 | The United States Of America As Represented By The Secretary Of The Army | Microelectronic 3D bipolar magnetotransistor magnetometer |
US5793051A (en) * | 1995-06-07 | 1998-08-11 | Robotic Vision Systems, Inc. | Method for obtaining three-dimensional data from semiconductor devices in a row/column array and control of manufacturing of same with data to eliminate manufacturing errors |
FR2813443B1 (fr) * | 2000-08-30 | 2003-01-03 | Centre Nat Rech Scient | Capteur a effet hall |
JP2006080338A (ja) * | 2004-09-10 | 2006-03-23 | Tokyo Institute Of Technology | 高温用磁気センサ |
DE102012024062A1 (de) * | 2012-12-10 | 2014-06-12 | Micronas Gmbh | Magnetfeldsensor |
CN103143911A (zh) * | 2013-03-07 | 2013-06-12 | 常州市墅乐厨具有限公司 | 齿轮自动装配机 |
CN108776251B (zh) * | 2018-03-30 | 2019-04-30 | 清华大学 | 感生电压测量方法及系统 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57121288A (en) * | 1981-01-20 | 1982-07-28 | Sanyo Electric Co Ltd | Hall element |
JPS60127293A (ja) * | 1983-12-15 | 1985-07-06 | Asahi Chem Ind Co Ltd | ダイヤモンドの製造方法 |
JPS6270295A (ja) * | 1985-09-24 | 1987-03-31 | Sumitomo Electric Ind Ltd | n型半導体ダイヤモンド膜の製造法 |
EP0221531A3 (de) * | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Isoliertes gut wärmeleitendes Substrat und sein Herstellungsverfahren |
US4900628A (en) * | 1986-07-23 | 1990-02-13 | Sumitomo Electric Industries, Ltd. | Gaseous phase synthesized diamond and method for synthesizing same |
US4863529A (en) * | 1987-03-12 | 1989-09-05 | Sumitomo Electric Industries, Ltd. | Thin film single crystal diamond substrate |
-
1990
- 1990-05-21 JP JP2131590A patent/JP2884707B2/ja not_active Expired - Fee Related
-
1991
- 1991-04-24 DE DE69121306T patent/DE69121306T2/de not_active Expired - Fee Related
- 1991-04-24 EP EP91303685A patent/EP0458466B1/de not_active Expired - Lifetime
- 1991-05-09 US US07/697,441 patent/US5162886A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0458466A2 (de) | 1991-11-27 |
US5162886A (en) | 1992-11-10 |
DE69121306D1 (de) | 1996-09-19 |
JP2884707B2 (ja) | 1999-04-19 |
JPH0426172A (ja) | 1992-01-29 |
EP0458466A3 (en) | 1992-02-26 |
EP0458466B1 (de) | 1996-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: WESER & KOLLEGEN, 81245 MUENCHEN |
|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |