DE69119614D1 - Verfahren zum Herstellen eines Bornitridfilms - Google Patents

Verfahren zum Herstellen eines Bornitridfilms

Info

Publication number
DE69119614D1
DE69119614D1 DE69119614T DE69119614T DE69119614D1 DE 69119614 D1 DE69119614 D1 DE 69119614D1 DE 69119614 T DE69119614 T DE 69119614T DE 69119614 T DE69119614 T DE 69119614T DE 69119614 D1 DE69119614 D1 DE 69119614D1
Authority
DE
Germany
Prior art keywords
making
nitride film
boron nitride
boron
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69119614T
Other languages
English (en)
Inventor
Shoji Nakagama
Nobuhiko Fujita
Naohiro Toda
Akira Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1187990A external-priority patent/JPH03219066A/ja
Priority claimed from JP21021390A external-priority patent/JPH0499261A/ja
Priority claimed from JP22536390A external-priority patent/JPH04107258A/ja
Priority claimed from JP23898490A external-priority patent/JPH04119982A/ja
Priority claimed from JP31798690A external-priority patent/JPH04191358A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69119614D1 publication Critical patent/DE69119614D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0647—Boron nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
DE69119614T 1990-01-23 1991-01-23 Verfahren zum Herstellen eines Bornitridfilms Expired - Lifetime DE69119614D1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP1187990A JPH03219066A (ja) 1990-01-23 1990-01-23 窒化ホウ素薄膜の作成方法
JP21021390A JPH0499261A (ja) 1990-08-10 1990-08-10 窒化ホウ素膜の製造方法
JP22536390A JPH04107258A (ja) 1990-08-29 1990-08-29 窒化ホウ素薄膜の作成方法
JP23898490A JPH04119982A (ja) 1990-09-11 1990-09-11 窒化ホウ素膜の製造方法
JP31798690A JPH04191358A (ja) 1990-11-26 1990-11-26 窒化ホウ素膜の製造方法

Publications (1)

Publication Number Publication Date
DE69119614D1 true DE69119614D1 (de) 1996-06-27

Family

ID=27519344

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119614T Expired - Lifetime DE69119614D1 (de) 1990-01-23 1991-01-23 Verfahren zum Herstellen eines Bornitridfilms

Country Status (3)

Country Link
US (1) US5096740A (de)
EP (1) EP0439135B1 (de)
DE (1) DE69119614D1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5330611A (en) * 1989-12-06 1994-07-19 General Motors Corporation Cubic boron nitride carbide films
US5264296A (en) * 1989-12-06 1993-11-23 General Motors Corporation Laser depositon of crystalline boron nitride films
DE59007568D1 (de) * 1990-04-06 1994-12-01 Siemens Ag Verfahren zur Herstellung von mikrokristallin kubischen Bornitridschichten.
JPH04228572A (ja) * 1990-08-10 1992-08-18 Sumitomo Electric Ind Ltd 硬質窒化ホウ素合成法
US5227204A (en) * 1991-08-27 1993-07-13 Northeastern University Fabrication of ferrite films using laser deposition
FR2689315A1 (fr) * 1992-03-27 1993-10-01 Alsthom Cge Alcatel Procédé de fabrication d'un substrat pour l'électronique de puissance et substrat obtenu par ce procédé.
JPH05330806A (ja) * 1992-05-26 1993-12-14 Sumitomo Electric Ind Ltd 立方晶窒化ホウ素の加工方法
US5236545A (en) * 1992-10-05 1993-08-17 The Board Of Governors Of Wayne State University Method for heteroepitaxial diamond film development
US5733609A (en) * 1993-06-01 1998-03-31 Wang; Liang Ceramic coatings synthesized by chemical reactions energized by laser plasmas
AU8070294A (en) * 1993-07-15 1995-02-13 President And Fellows Of Harvard College Extended nitride material comprising beta -c3n4
US5483920A (en) * 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
US5731046A (en) * 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
US5554415A (en) * 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
US5620754A (en) * 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
DE4407274C1 (de) * 1994-03-04 1995-03-30 Fraunhofer Ges Forschung Verfahren zur Herstellung von verschleißfesten Schichten aus kubischem Bornitrid und ihre Anwendung
US5535905A (en) * 1994-07-29 1996-07-16 General Motors Corporation Etching technique for producing cubic boron nitride films
US5976716A (en) * 1996-04-04 1999-11-02 Kennametal Inc. Substrate with a superhard coating containing boron and nitrogen and method of making the same
US5948541A (en) * 1996-04-04 1999-09-07 Kennametal Inc. Boron and nitrogen containing coating and method for making
US5885666A (en) * 1997-05-06 1999-03-23 General Motors Corporation Conversion of hexagonal-like BN to cubic-like BN by ion implantation
FR2775005B1 (fr) * 1998-02-17 2000-05-26 Univ Lille Sciences Tech Revetement a base de nitrure de carbone ultra-dur et souple et son procede de preparation
US6153061A (en) * 1998-03-02 2000-11-28 Auburn University Method of synthesizing cubic boron nitride films
JP3704258B2 (ja) * 1998-09-10 2005-10-12 松下電器産業株式会社 薄膜形成方法
US6626949B1 (en) 1999-07-14 2003-09-30 Biopro, Inc. Diamond coated joint implant
US6593015B1 (en) 1999-11-18 2003-07-15 Kennametal Pc Inc. Tool with a hard coating containing an aluminum-nitrogen compound and a boron-nitrogen compound and method of making the same
US6680229B2 (en) 2001-01-26 2004-01-20 Micron Technology, Inc. Method for enhancing vertical growth during the selective formation of silicon, and structures formed using same
KR101412774B1 (ko) * 2012-07-27 2014-07-02 서울대학교산학협력단 다공성 질화붕소 및 이의 제조방법
JP6170754B2 (ja) * 2013-06-18 2017-07-26 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
CN105568220B (zh) * 2016-01-15 2018-01-02 吉林大学 一种磁控溅射制备立方氮化硼厚膜的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683043A (en) * 1986-01-21 1987-07-28 Battelle Development Corporation Cubic boron nitride preparation
JPS62216225A (ja) * 1986-03-17 1987-09-22 Nec Corp 半導体製造装置
JPS6372875A (ja) * 1986-09-17 1988-04-02 Hitachi Ltd スパツタリング装置
JPS63262457A (ja) * 1987-04-20 1988-10-28 Nissin Electric Co Ltd 窒化ホウ素膜の作製方法
US4957773A (en) * 1989-02-13 1990-09-18 Syracuse University Deposition of boron-containing films from decaborane
DE69018396T2 (de) * 1989-12-06 1995-08-17 Gen Motors Corp Laserablagerung von kristallinischen Boronnitridschichten.

Also Published As

Publication number Publication date
EP0439135B1 (de) 1996-05-22
US5096740A (en) 1992-03-17
EP0439135A1 (de) 1991-07-31

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Legal Events

Date Code Title Description
8332 No legal effect for de