DE69110619D1 - Abscheidungsvorrichtung für das Aufwachsen von einem Material unter reduzierter Gefahr. - Google Patents

Abscheidungsvorrichtung für das Aufwachsen von einem Material unter reduzierter Gefahr.

Info

Publication number
DE69110619D1
DE69110619D1 DE69110619T DE69110619T DE69110619D1 DE 69110619 D1 DE69110619 D1 DE 69110619D1 DE 69110619 T DE69110619 T DE 69110619T DE 69110619 T DE69110619 T DE 69110619T DE 69110619 D1 DE69110619 D1 DE 69110619D1
Authority
DE
Germany
Prior art keywords
growth
separation device
reduced risk
risk
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69110619T
Other languages
English (en)
Other versions
DE69110619T2 (de
Inventor
Hiromi Ito
Kazushige Shiina
Tatsuya Ohori
Hitoshi Tanaka
Nobuaki Tomesakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69110619D1 publication Critical patent/DE69110619D1/de
Publication of DE69110619T2 publication Critical patent/DE69110619T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H01L21/205—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69110619T 1990-11-09 1991-11-08 Abscheidungsvorrichtung für das Aufwachsen von einem Material unter reduzierter Gefahr. Expired - Fee Related DE69110619T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2302631A JPH04175294A (ja) 1990-11-09 1990-11-09 気相成長装置

Publications (2)

Publication Number Publication Date
DE69110619D1 true DE69110619D1 (de) 1995-07-27
DE69110619T2 DE69110619T2 (de) 1995-12-14

Family

ID=17911310

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69110619T Expired - Fee Related DE69110619T2 (de) 1990-11-09 1991-11-08 Abscheidungsvorrichtung für das Aufwachsen von einem Material unter reduzierter Gefahr.

Country Status (5)

Country Link
US (1) US5833754A (de)
EP (1) EP0485301B1 (de)
JP (1) JPH04175294A (de)
KR (1) KR950003432B1 (de)
DE (1) DE69110619T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100105A (en) * 1996-05-10 2000-08-08 Sumitomo Chemical Company, Ltd. Fabrication of InGaAlN based compound semiconductor device
US5814561A (en) * 1997-02-14 1998-09-29 Jackson; Paul D. Substrate carrier having a streamlined shape and method for thin film formation
JP2000012463A (ja) * 1998-06-17 2000-01-14 Mitsubishi Electric Corp 成膜装置
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
KR100345053B1 (ko) * 1999-10-01 2002-07-19 삼성전자 주식회사 Ｈｓｇ-ｓｉ 제조 방법 및 상기 방법을 수행하는 장치
US6566630B2 (en) * 2000-04-21 2003-05-20 Tokyo Electron Limited Thermal processing apparatus for introducing gas between a target object and a cooling unit for cooling the target object
KR100427423B1 (ko) * 2000-05-25 2004-04-13 가부시키가이샤 고베 세이코쇼 Ｃｖｄ용 인너튜브
DE10057134A1 (de) * 2000-11-17 2002-05-23 Aixtron Ag Verfahren zum Abscheiden von insbesondere kristallinen Schichten sowie Vorrichtung zur Durchführung des Verfahrens
US20040033361A1 (en) * 2002-08-06 2004-02-19 Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) Component of glass-like carbon for CVD apparatus and process for production thereof
JP4945185B2 (ja) * 2006-07-24 2012-06-06 株式会社東芝 結晶成長方法
EP2215282B1 (de) 2007-10-11 2016-11-30 Valence Process Equipment, Inc. Cvd-reaktor
JP5209395B2 (ja) * 2008-07-25 2013-06-12 大陽日酸株式会社 気相成長装置
JP4683100B2 (ja) * 2008-09-17 2011-05-11 パナソニック株式会社 ボンディング装置およびボンディングツール
KR100966525B1 (ko) * 2009-06-16 2010-06-29 퀄리플로나라테크 주식회사 단결정 실리콘 잉곳 성장장치의 프로세스 용기 보호 시스템
US20140097752A1 (en) * 2012-10-09 2014-04-10 Varian Semiconductor Equipment Associates, Inc. Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield
CN103540914B (zh) * 2013-09-24 2016-06-15 中国科学院苏州纳米技术与纳米仿生研究所 一种使用射频加热的桶式cvd设备反应室
DE102013114203A1 (de) * 2013-12-17 2015-06-18 Osram Opto Semiconductors Gmbh Waferträger, Reaktor und Verfahren zur Temperaturmessung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237086B2 (ja) * 1981-01-31 1990-08-22 Toshiba Machine Co Ltd Handotaikisoseichosochi
IT1147832B (it) * 1982-03-29 1986-11-26 Dynamit Nobel Ag Apparecchio e procedimento per la produzione di materiali semiconduttori iperpuri
DE3485898D1 (de) * 1983-12-09 1992-10-01 Applied Materials Inc Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.
US4556584A (en) * 1984-05-03 1985-12-03 Btu Engineering Corporation Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates
KR900001666B1 (ko) * 1985-07-19 1990-03-17 후지쓰가부시끼가이샤 화합물 반도체의 에피택셜층 성장용의 화학적 유기 금속 기상 성장장치
JPS62239522A (ja) * 1986-04-10 1987-10-20 Mitsubishi Electric Corp 半導体結晶製造装置
JPS62280372A (ja) * 1986-05-29 1987-12-05 Nec Corp プラズマ気相成長装置
JPS63299115A (ja) * 1987-05-29 1988-12-06 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
JPH02146725A (ja) * 1988-11-28 1990-06-05 Sumitomo Electric Ind Ltd 有機金属気相成長装置
JPH0383893A (ja) * 1989-08-25 1991-04-09 Sumitomo Metal Ind Ltd 気相成長装置

Also Published As

Publication number Publication date
EP0485301B1 (de) 1995-06-21
EP0485301A1 (de) 1992-05-13
JPH04175294A (ja) 1992-06-23
KR950003432B1 (ko) 1995-04-12
US5833754A (en) 1998-11-10
DE69110619T2 (de) 1995-12-14
KR920010035A (ko) 1992-06-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee