DE68920853D1 - Verfahren für das Wachstum von epitaxialen Schichten. - Google Patents

Verfahren für das Wachstum von epitaxialen Schichten.

Info

Publication number
DE68920853D1
DE68920853D1 DE68920853T DE68920853T DE68920853D1 DE 68920853 D1 DE68920853 D1 DE 68920853D1 DE 68920853 T DE68920853 T DE 68920853T DE 68920853 T DE68920853 T DE 68920853T DE 68920853 D1 DE68920853 D1 DE 68920853D1
Authority
DE
Germany
Prior art keywords
growth
epitaxial layers
epitaxial
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68920853T
Other languages
English (en)
Other versions
DE68920853T2 (de
Inventor
Toshio Fujii
Adarsh Sandhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63301256A external-priority patent/JP2641540B2/ja
Priority claimed from JP30125788A external-priority patent/JP2806951B2/ja
Priority claimed from JP30125588A external-priority patent/JP2641539B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE68920853D1 publication Critical patent/DE68920853D1/de
Application granted granted Critical
Publication of DE68920853T2 publication Critical patent/DE68920853T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations
DE68920853T 1988-11-28 1989-11-24 Verfahren für das Wachstum von epitaxialen Schichten. Expired - Fee Related DE68920853T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63301256A JP2641540B2 (ja) 1988-11-28 1988-11-28 エピタキシャル結晶層形成方法及びストライプ型半導体レーザの製造方法
JP30125788A JP2806951B2 (ja) 1988-11-28 1988-11-28 ストライプ型半導体レーザの製造方法
JP30125588A JP2641539B2 (ja) 1988-11-28 1988-11-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE68920853D1 true DE68920853D1 (de) 1995-03-09
DE68920853T2 DE68920853T2 (de) 1995-05-24

Family

ID=27338446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920853T Expired - Fee Related DE68920853T2 (de) 1988-11-28 1989-11-24 Verfahren für das Wachstum von epitaxialen Schichten.

Country Status (3)

Country Link
US (1) US5476811A (de)
EP (1) EP0377281B1 (de)
DE (1) DE68920853T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9013859D0 (en) * 1990-06-21 1990-08-15 Ici Plc Zeolites
JPH0897147A (ja) * 1994-09-29 1996-04-12 Mitsubishi Electric Corp エピタキシャル結晶成長装置
JPH08116135A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp 導波路集積素子の製造方法，及び導波路集積素子
JP3755090B2 (ja) * 1995-06-14 2006-03-15 三菱電機株式会社 半導体装置の製造方法，及び半導体装置
JP3171307B2 (ja) * 1995-06-26 2001-05-28 富士通株式会社 半導体レーザ装置及びその製造方法
JP3062065B2 (ja) * 1995-10-20 2000-07-10 日本電気株式会社 半導体装置の製造方法
US6695913B1 (en) 1997-07-10 2004-02-24 Sharp Kabushiki Kaisha III-Nitride optoelectronic semiconductor device containing lattice mismatched III-Nitride semiconductor materials
GB2327145A (en) * 1997-07-10 1999-01-13 Sharp Kk Graded layers in an optoelectronic semiconductor device
JP3420028B2 (ja) * 1997-07-29 2003-06-23 株式会社東芝 ＧａＮ系化合物半導体素子の製造方法
DE69937042T2 (de) * 1998-09-11 2008-05-29 Japan Science And Technology Agency, Kawaguchi Kombinatorische vorrichtung für epitaktische molekularschicht
US6707074B2 (en) * 2000-07-04 2004-03-16 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and apparatus for driving the same
US6391748B1 (en) 2000-10-03 2002-05-21 Texas Tech University Method of epitaxial growth of high quality nitride layers on silicon substrates
US7541067B2 (en) * 2006-04-13 2009-06-02 Solopower, Inc. Method and apparatus for continuous processing of buffer layers for group IBIIIAVIA solar cells
WO2007121383A2 (en) * 2006-04-13 2007-10-25 Solopower, Inc. Method and apparatus to form thin layers of materials on a base
US7923281B2 (en) * 2006-04-13 2011-04-12 Solopower, Inc. Roll-to-roll processing method and tools for electroless deposition of thin layers
US7943959B2 (en) * 2007-08-28 2011-05-17 Littelfuse, Inc. Low capacitance semiconductor device
US7638816B2 (en) * 2007-08-28 2009-12-29 Littelfuse, Inc. Epitaxial surge protection device
WO2009029954A2 (en) * 2007-09-01 2009-03-05 Yann Roussillon Improved solution deposition assembly
EP2206141A4 (de) * 2007-10-17 2012-10-10 Yann Roussillon Anordnung zur verbesserten ablagerung einer lösung
US7720342B2 (en) * 2008-04-15 2010-05-18 Hewlett-Packard Development Company, L.P. Optical device with a graded bandgap structure and methods of making and using the same
US8497152B2 (en) * 2009-05-12 2013-07-30 Solopower, Inc. Roll-to-roll processing method and tools for electroless deposition of thin layers
JP6485382B2 (ja) * 2016-02-23 2019-03-20 株式会社デンソー 化合物半導体装置の製造方法および化合物半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613387A (en) * 1983-02-28 1986-09-23 Itt Industries Inc. Injection laser manufacture
US4636268A (en) * 1984-11-30 1987-01-13 At&T Bell Laboratories Chemical beam deposition method utilizing alkyl compounds in a carrier gas
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
EP0261262B1 (de) * 1986-09-23 1992-06-17 International Business Machines Corporation Streifenlaser mit transversalem Übergang
US4785457A (en) * 1987-05-11 1988-11-15 Rockwell International Corporation Heterostructure semiconductor laser

Also Published As

Publication number Publication date
US5476811A (en) 1995-12-19
EP0377281B1 (de) 1995-01-25
DE68920853T2 (de) 1995-05-24
EP0377281A1 (de) 1990-07-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee