DE69104864D1 - Verfahren zur gesteuerten Züchtung von nadelförmigen Kristallen und ihre Verwendung zur Herstellung spitzenförmiger Mikrokathoden. - Google Patents

Verfahren zur gesteuerten Züchtung von nadelförmigen Kristallen und ihre Verwendung zur Herstellung spitzenförmiger Mikrokathoden.

Info

Publication number
DE69104864D1
DE69104864D1 DE69104864T DE69104864T DE69104864D1 DE 69104864 D1 DE69104864 D1 DE 69104864D1 DE 69104864 T DE69104864 T DE 69104864T DE 69104864 T DE69104864 T DE 69104864T DE 69104864 D1 DE69104864 D1 DE 69104864D1
Authority
DE
Germany
Prior art keywords
microcathodes
pointed
production
controlled growth
acicular crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69104864T
Other languages
English (en)
Other versions
DE69104864T2 (de
Inventor
Didier Pribat
Pierre Leclerc
Pierre Legagneux
Christian Collet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE69104864D1 publication Critical patent/DE69104864D1/de
Publication of DE69104864T2 publication Critical patent/DE69104864T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/007—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69104864T 1990-02-23 1991-02-15 Verfahren zur gesteuerten Züchtung von nadelförmigen Kristallen und ihre Verwendung zur Herstellung spitzenförmiger Mikrokathoden. Expired - Fee Related DE69104864T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9002258A FR2658839B1 (fr) 1990-02-23 1990-02-23 Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes.

Publications (2)

Publication Number Publication Date
DE69104864D1 true DE69104864D1 (de) 1994-12-08
DE69104864T2 DE69104864T2 (de) 1995-03-23

Family

ID=9394066

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69104864T Expired - Fee Related DE69104864T2 (de) 1990-02-23 1991-02-15 Verfahren zur gesteuerten Züchtung von nadelförmigen Kristallen und ihre Verwendung zur Herstellung spitzenförmiger Mikrokathoden.

Country Status (5)

Country Link
US (1) US5314569A (de)
EP (1) EP0443920B1 (de)
JP (1) JPH0597598A (de)
DE (1) DE69104864T2 (de)
FR (1) FR2658839B1 (de)

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JP3099754B2 (ja) * 1996-10-23 2000-10-16 日本電気株式会社 プローブカードの製造方法
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FR2860780B1 (fr) 2003-10-13 2006-05-19 Centre Nat Rech Scient Procede de synthese de structures filamentaires nanometriques et composants pour l'electronique comprenant de telles structures
US20050112048A1 (en) * 2003-11-25 2005-05-26 Loucas Tsakalakos Elongated nano-structures and related devices
US7354850B2 (en) 2004-02-06 2008-04-08 Qunano Ab Directionally controlled growth of nanowhiskers
FR2870037B1 (fr) * 2004-05-04 2006-07-14 Commissariat Energie Atomique Systeme d'enregistrement d'informations et procede d'utilisation d'un tel systeme
EP1766108A1 (de) 2004-06-25 2007-03-28 Btg International Limited Bildung von nanowhiskers auf einem andersartigen material
JP4607513B2 (ja) * 2004-07-27 2011-01-05 株式会社アルバック カソード基板及びこのカソード基板の作製方法。
FR2879342B1 (fr) * 2004-12-15 2008-09-26 Thales Sa Cathode a emission de champ, a commande optique
US7385231B2 (en) 2005-08-31 2008-06-10 Fujifilmcorporation Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element
JP2009522197A (ja) * 2005-12-29 2009-06-11 ナノシス・インコーポレイテッド パターン形成された基板上のナノワイヤの配向した成長のための方法
JP5137095B2 (ja) * 2006-02-20 2013-02-06 国立大学法人 筑波大学 シリコンナノ結晶材料の製造方法及び該製造方法で製造されたシリコンナノ結晶材料
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US20080191317A1 (en) * 2007-02-13 2008-08-14 International Business Machines Corporation Self-aligned epitaxial growth of semiconductor nanowires
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US8530338B2 (en) * 2007-07-19 2013-09-10 California Institute Of Technology Structures of and methods for forming vertically aligned Si wire arrays
US7781853B2 (en) * 2007-07-26 2010-08-24 Hewlett-Packard Development Company, L.P. Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same
AU2008296763A1 (en) * 2007-08-28 2009-03-12 California Institute Of Technology Polymer-embedded semiconductor rod arrays
US8084337B2 (en) * 2007-10-26 2011-12-27 Qunano Ab Growth of III-V compound semiconductor nanowires on silicon substrates
US7927905B2 (en) * 2007-12-21 2011-04-19 Palo Alto Research Center Incorporated Method of producing microsprings having nanowire tip structures
US8247033B2 (en) 2008-09-19 2012-08-21 The University Of Massachusetts Self-assembly of block copolymers on topographically patterned polymeric substrates
US8518837B2 (en) 2008-09-25 2013-08-27 The University Of Massachusetts Method of producing nanopatterned articles using surface-reconstructed block copolymer films
WO2011066570A2 (en) * 2009-11-30 2011-06-03 California Institute Of Technology Semiconductor wire array structures, and solar cells and photodetectors based on such structures
WO2011156042A2 (en) 2010-03-23 2011-12-15 California Institute Of Technology Heterojunction wire array solar cells
GB2482915B (en) * 2010-08-20 2013-03-06 Univ Montfort A low temperture method for the production of polycrystalline silicon, aligned silicon columns and silicon nanowires
US9156682B2 (en) 2011-05-25 2015-10-13 The University Of Massachusetts Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles
WO2013106793A1 (en) 2012-01-13 2013-07-18 California Institute Of Technology Solar fuel generators
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CN102623393B (zh) * 2012-03-15 2014-06-04 华中科技大学 一种利用锡须生长填充微孔的方法
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Also Published As

Publication number Publication date
FR2658839A1 (fr) 1991-08-30
EP0443920A1 (de) 1991-08-28
FR2658839B1 (fr) 1997-06-20
DE69104864T2 (de) 1995-03-23
JPH0597598A (ja) 1993-04-20
EP0443920B1 (de) 1994-11-02
US5314569A (en) 1994-05-24

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee