DE69034030D1 - Quanten-Struktur mit vergrabenem Gitter - Google Patents

Quanten-Struktur mit vergrabenem Gitter

Info

Publication number
DE69034030D1
DE69034030D1 DE69034030T DE69034030T DE69034030D1 DE 69034030 D1 DE69034030 D1 DE 69034030D1 DE 69034030 T DE69034030 T DE 69034030T DE 69034030 T DE69034030 T DE 69034030T DE 69034030 D1 DE69034030 D1 DE 69034030D1
Authority
DE
Germany
Prior art keywords
quantum structure
buried lattice
buried
lattice
quantum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69034030T
Other languages
English (en)
Other versions
DE69034030T2 (de
Inventor
Hiroyuki Sakaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of DE69034030D1 publication Critical patent/DE69034030D1/de
Application granted granted Critical
Publication of DE69034030T2 publication Critical patent/DE69034030T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/158—Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
DE69034030T 1989-11-13 1990-01-18 Quanten-Struktur mit vergrabenem Gitter Expired - Fee Related DE69034030T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29436889A JP2575901B2 (ja) 1989-11-13 1989-11-13 グリッド入り量子構造

Publications (2)

Publication Number Publication Date
DE69034030D1 true DE69034030D1 (de) 2003-01-30
DE69034030T2 DE69034030T2 (de) 2003-04-30

Family

ID=17806808

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69034030T Expired - Fee Related DE69034030T2 (de) 1989-11-13 1990-01-18 Quanten-Struktur mit vergrabenem Gitter

Country Status (4)

Country Link
US (1) US5054030A (de)
EP (1) EP0427905B1 (de)
JP (1) JP2575901B2 (de)
DE (1) DE69034030T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362972A (en) * 1990-04-20 1994-11-08 Hitachi, Ltd. Semiconductor device using whiskers
JP2515051B2 (ja) * 1990-11-14 1996-07-10 三菱電機株式会社 半導体光素子及びその製造方法
US5332910A (en) * 1991-03-22 1994-07-26 Hitachi, Ltd. Semiconductor optical device with nanowhiskers
JP3114246B2 (ja) * 1991-06-07 2000-12-04 ソニー株式会社 量子効果デバイス
JP3243303B2 (ja) * 1991-10-28 2002-01-07 ゼロックス・コーポレーション 量子閉じ込め半導体発光素子及びその製造方法
EP0665578B1 (de) * 1993-11-25 2002-02-20 Nippon Telegraph And Telephone Corporation Halbleiterstruktur und Herstellungsverfahren
FR2814854B1 (fr) 2000-10-02 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'ilots juxtaposes par depot autoorganise sur un substrat et structure ainsi obtenue
US6522063B2 (en) * 2001-03-28 2003-02-18 Epitech Corporation Light emitting diode
FR2876498B1 (fr) * 2004-10-12 2008-03-14 Commissariat Energie Atomique Procede de realisation d'heterostructures resonnantes a transport planaire
RU2520538C1 (ru) * 2012-11-02 2014-06-27 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) НАНОРАЗМЕРНАЯ СТРУКТУРА С КВАЗИОДНОМЕРНЫМИ ПРОВОДЯЩИМИ НИТЯМИ ОЛОВА В РЕШЕТКЕ GaAs
CN104538524B (zh) * 2014-12-17 2017-06-16 中国科学院半导体研究所 InGaN量子点的外延结构及生长方法
EP3745447A1 (de) * 2019-05-31 2020-12-02 Technische Universität München Wafer, optische emissionsvorrichtung, verfahren zur herstellung eines wafers und verfahren zur charakterisierung eines system zur herstellung eines wafers
CN115036366A (zh) * 2021-03-05 2022-09-09 联华电子股份有限公司 半导体装置及其制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58218174A (ja) * 1982-06-11 1983-12-19 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタ
US4591889A (en) * 1984-09-14 1986-05-27 At&T Bell Laboratories Superlattice geometry and devices
US4786951A (en) * 1985-02-12 1988-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical element and a process for producing the same
US4733282A (en) * 1985-08-13 1988-03-22 International Business Machines Corporation One-dimensional quantum pipeline type carrier path semiconductor devices
JPH0752719B2 (ja) * 1986-10-09 1995-06-05 日本電信電話株式会社 縦型半導体超格子の製造方法
JPH0632343B2 (ja) * 1986-11-27 1994-04-27 日本電気株式会社 半導体レ−ザ
JPH0638541B2 (ja) * 1987-01-21 1994-05-18 日本電気株式会社 半導体レ−ザ素子
JPH0680865B2 (ja) * 1987-03-27 1994-10-12 日本電気株式会社 半導体超格子
US4868839A (en) * 1988-03-14 1989-09-19 Trw Inc. Semiconductor laser array with nonplanar diffraction region
JP2720930B2 (ja) * 1988-07-06 1998-03-04 科学技術振興事業団 グリッド入り量子薄膜素子
JPH0334594A (ja) * 1989-06-30 1991-02-14 Nec Corp 量子井戸構造の製造方法

Also Published As

Publication number Publication date
EP0427905B1 (de) 2002-12-18
EP0427905A2 (de) 1991-05-22
JPH03154384A (ja) 1991-07-02
DE69034030T2 (de) 2003-04-30
JP2575901B2 (ja) 1997-01-29
US5054030A (en) 1991-10-01
EP0427905A3 (en) 1992-05-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee