DE69033565D1 - Zwischenzeilige übertragende ccd-bildsensorvorrichtung mit einer elektrodenstruktur für jeden bildpunkt - Google Patents

Zwischenzeilige übertragende ccd-bildsensorvorrichtung mit einer elektrodenstruktur für jeden bildpunkt

Info

Publication number
DE69033565D1
DE69033565D1 DE69033565T DE69033565T DE69033565D1 DE 69033565 D1 DE69033565 D1 DE 69033565D1 DE 69033565 T DE69033565 T DE 69033565T DE 69033565 T DE69033565 T DE 69033565T DE 69033565 D1 DE69033565 D1 DE 69033565D1
Authority
DE
Germany
Prior art keywords
sensor device
electrode structure
image sensor
intermediate transmitting
ccd image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033565T
Other languages
English (en)
Other versions
DE69033565T2 (de
Inventor
Lawrence Losee
John Tredwell
Michael Boisvert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of DE69033565D1 publication Critical patent/DE69033565D1/de
Application granted granted Critical
Publication of DE69033565T2 publication Critical patent/DE69033565T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69033565T 1989-02-10 1990-01-06 Bildfächensensor vom Interline-Transfer-Typ mit einer Elektrodenstruktur für jeden Pixel Expired - Fee Related DE69033565T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/309,646 US4908518A (en) 1989-02-10 1989-02-10 Interline transfer CCD image sensing device with electrode structure for each pixel
PCT/US1990/000608 WO1990009680A1 (en) 1989-02-10 1990-01-06 Interline transfer ccd image sensing device with electrode structure for each pixel

Publications (2)

Publication Number Publication Date
DE69033565D1 true DE69033565D1 (de) 2000-07-13
DE69033565T2 DE69033565T2 (de) 2001-02-08

Family

ID=23199067

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033565T Expired - Fee Related DE69033565T2 (de) 1989-02-10 1990-01-06 Bildfächensensor vom Interline-Transfer-Typ mit einer Elektrodenstruktur für jeden Pixel

Country Status (5)

Country Link
US (1) US4908518A (de)
EP (1) EP0409970B1 (de)
JP (1) JPH03505028A (de)
DE (1) DE69033565T2 (de)
WO (1) WO1990009680A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245452A (en) * 1988-06-24 1993-09-14 Matsushita Electronics Corporation Active matric drive liquid crystal display device using polycrystalline silicon pixel electrodes
US5063449A (en) * 1988-11-18 1991-11-05 Kabushiki Kaisha Toshiba Solid-state image sensor employing a gate and diode for bias charge injection
US5288651A (en) * 1989-11-09 1994-02-22 Kabushiki Kaisha Toshiba Method of making semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD
JP3100624B2 (ja) * 1989-11-29 2000-10-16 イーストマン コダック カンパニー 各ピクセルに対して簡易電極構造を備えた非インターレースインターライン転送型ｃｃｄイメージセンサ
US5235198A (en) * 1989-11-29 1993-08-10 Eastman Kodak Company Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel
US5051832A (en) * 1990-02-12 1991-09-24 Eastman Kodak Company Selective operation in interlaced and non-interlaced modes of interline transfer CCD image sensing device
US5040071A (en) * 1990-03-21 1991-08-13 Eastman Kodak Company Image sensor having multiple horizontal shift registers
WO1991015875A1 (en) * 1990-04-04 1991-10-17 Eastman Kodak Company Two phase ccd for interline image sensor
US5070380A (en) * 1990-08-13 1991-12-03 Eastman Kodak Company Transfer gate for photodiode to CCD image sensor
US5111263A (en) * 1991-02-08 1992-05-05 Eastman Kodak Company Charge-coupled device (CCD) image sensor operable in either interlace or non-interlace mode
JPH04291887A (ja) * 1991-03-20 1992-10-15 Sony Corp 電荷転送装置
AU1995092A (en) * 1991-05-10 1992-12-30 Q-Dot. Inc. High-speed peristaltic ccd imager with gaas fet output
WO1992022092A1 (en) * 1991-06-07 1992-12-10 Eastman Kodak Company Ccd electrode structure for image sensors
US5235649A (en) * 1991-06-13 1993-08-10 Videk Corporation Cigarette inspection method
TW218426B (de) * 1992-05-11 1994-01-01 Samsung Electronics Co Ltd
KR960015271B1 (ko) * 1993-08-18 1996-11-07 엘지반도체 주식회사 전하전송장치의 제조방법
WO1995020825A1 (en) * 1994-01-31 1995-08-03 Scientific Imaging Technologies, Inc. Charge-coupled device array for spectroscopic detection
US5432335A (en) * 1994-03-14 1995-07-11 Princeton Instruments, Inc. Charge-coupled device for spectroscopic detection
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US5825840A (en) * 1996-04-23 1998-10-20 Eastman Kodak Company Interline sensor employing photocapacitor gate
US6320617B1 (en) 1995-11-07 2001-11-20 Eastman Kodak Company CMOS active pixel sensor using a pinned photo diode
US6297070B1 (en) 1996-12-20 2001-10-02 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US5903021A (en) * 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
KR100261158B1 (ko) * 1997-06-17 2000-07-01 김영환 고체촬상소자
US6057586A (en) * 1997-09-26 2000-05-02 Intel Corporation Method and apparatus for employing a light shield to modulate pixel color responsivity
FR2771217B1 (fr) * 1997-11-14 2000-02-04 Thomson Csf Dispositif semiconducteur a transfert de charges
US6492694B2 (en) 1998-02-27 2002-12-10 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
US6995795B1 (en) 2000-09-12 2006-02-07 Eastman Kodak Company Method for reducing dark current
JP2005166825A (ja) * 2003-12-01 2005-06-23 Matsushita Electric Ind Co Ltd 電荷転送装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995302A (en) * 1973-05-07 1976-11-30 Fairchild Camera And Instrument Corporation Transfer gate-less photosensor configuration
US4228445A (en) * 1977-10-27 1980-10-14 Texas Instruments Incorporated Dual plane well-type two-phase ccd
JPS54114922A (en) * 1978-02-27 1979-09-07 Nec Corp Two dimentional pick up element and its drive
US4229752A (en) * 1978-05-16 1980-10-21 Texas Instruments Incorporated Virtual phase charge transfer device
JPS6033345B2 (ja) * 1979-06-08 1985-08-02 日本電気株式会社 電荷転送撮像装置とその駆動方法
JPS5875382A (ja) * 1981-07-20 1983-05-07 Sony Corp 固体撮像装置
US4613402A (en) * 1985-07-01 1986-09-23 Eastman Kodak Company Method of making edge-aligned implants and electrodes therefor
US4772565A (en) * 1986-05-21 1988-09-20 Kabushiki Kaisha Toshiba Method of manufacturing solid-state image sensor

Also Published As

Publication number Publication date
JPH03505028A (ja) 1991-10-31
EP0409970B1 (de) 2000-06-07
EP0409970A1 (de) 1991-01-30
US4908518A (en) 1990-03-13
WO1990009680A1 (en) 1990-08-23
DE69033565T2 (de) 2001-02-08

Similar Documents

Publication Publication Date Title
DE69033565D1 (de) Zwischenzeilige übertragende ccd-bildsensorvorrichtung mit einer elektrodenstruktur für jeden bildpunkt
DE69026729D1 (de) Bildübertragungsvorrichtung
DE3530778C2 (de) Endoskop mit einer festkoerper-bildaufnahmevorrichtung
DE3580111D1 (de) Bild-diagnosevorrichtung.
DE3689930D1 (de) Elektronisches Abbildungsgerät.
KR850006792A (ko) 이미지 센서(Image Sensor)
DE69030890D1 (de) Bildaufnahmevorrichtung
DE3588227D1 (de) Bildsensoranordnung
DE69032610D1 (de) Bilderzeugungsgerät
DE69030389D1 (de) Bilderzeugungsgerät
DE69032231D1 (de) Bilderzeugungsgerät mit Prioritätsunterbrechung
DE69031133D1 (de) Bilderzeugungsgerät
DE69016835D1 (de) Bildübertragungsvorrichtung.
DE3855831D1 (de) Bilderzeugungsgerät
DE69011378D1 (de) Bildaufnahmeeinrichtung mit elektronischer Bildvergrösserung.
DE69024140D1 (de) Bilderzeugungsgerät
DE68918023D1 (de) CCD-Bilderzeugungsvorrichtung.
DE69029682D1 (de) Abbildungsgerät
DE69026199D1 (de) Bilderzeugungsgerät
DE69420168T2 (de) Röntgenuntersuchungsgerät mit einer Bildformungsvorrichtung mit mehreren Bildsensoren
DE3772737D1 (de) Ccd-bildsensorsvorrichtung.
DE69029295D1 (de) Abbildungsgerät
DE3885944D1 (de) Bildsensorapparat mit Schattierungskompensation.
DE69018515D1 (de) Bildübertragungsvorrichtung.
NL193514B (nl) Beeldsensoren met ladingsgekoppelde inrichtingen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee