DE69028168D1 - Rasterelektronenmikroskop und Verfahren zur Darstellung von Schnittprofilen unter Anwendung desselben - Google Patents

Rasterelektronenmikroskop und Verfahren zur Darstellung von Schnittprofilen unter Anwendung desselben

Info

Publication number
DE69028168D1
DE69028168D1 DE69028168T DE69028168T DE69028168D1 DE 69028168 D1 DE69028168 D1 DE 69028168D1 DE 69028168 T DE69028168 T DE 69028168T DE 69028168 T DE69028168 T DE 69028168T DE 69028168 D1 DE69028168 D1 DE 69028168D1
Authority
DE
Germany
Prior art keywords
same
electron microscope
scanning electron
sectional profiles
displaying sectional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028168T
Other languages
English (en)
Other versions
DE69028168T2 (de
Inventor
Noboru Nomura
Hideo Nakagawa
Taichi Koizumi
Kenji Harafuji
Mitsuhiro Okuni
Norimichi Anazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Holon Co Ltd
Panasonic Holdings Corp
Original Assignee
Holon Co Ltd
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1244392A external-priority patent/JPH03108243A/ja
Priority claimed from JP2181891A external-priority patent/JPH0471153A/ja
Priority claimed from JP2181892A external-priority patent/JP2968566B2/ja
Priority claimed from JP2181893A external-priority patent/JP2968567B2/ja
Application filed by Holon Co Ltd, Matsushita Electric Industrial Co Ltd filed Critical Holon Co Ltd
Publication of DE69028168D1 publication Critical patent/DE69028168D1/de
Application granted granted Critical
Publication of DE69028168T2 publication Critical patent/DE69028168T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE69028168T 1989-09-20 1990-09-20 Rasterelektronenmikroskop und Verfahren zur Darstellung von Schnittprofilen unter Anwendung desselben Expired - Fee Related DE69028168T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1244392A JPH03108243A (ja) 1989-09-20 1989-09-20 走査型電子顕微鏡及びそれを用いた観察方法
JP2181891A JPH0471153A (ja) 1990-07-09 1990-07-09 走査型電子顕微鏡の断面プロファイル表示方法
JP2181892A JP2968566B2 (ja) 1990-07-09 1990-07-09 走査型電子顕微鏡の非点低減方法
JP2181893A JP2968567B2 (ja) 1990-07-09 1990-07-09 走査型電子顕微鏡

Publications (2)

Publication Number Publication Date
DE69028168D1 true DE69028168D1 (de) 1996-09-26
DE69028168T2 DE69028168T2 (de) 1997-01-09

Family

ID=27475018

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69028168T Expired - Fee Related DE69028168T2 (de) 1989-09-20 1990-09-20 Rasterelektronenmikroskop und Verfahren zur Darstellung von Schnittprofilen unter Anwendung desselben

Country Status (3)

Country Link
US (1) US5057689A (de)
EP (1) EP0418894B1 (de)
DE (1) DE69028168T2 (de)

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US5378984A (en) * 1992-01-20 1995-01-03 Advantest Corporation EB type IC tester
US5629526A (en) * 1993-09-28 1997-05-13 Nikon Corporation Electro-magnetic lens, charged particle beam transferring apparatus, and method for manufacturing electro-magnetic lens
JPH09115861A (ja) * 1995-10-20 1997-05-02 Hitachi Ltd 試料を加工する装置
US6469779B2 (en) 1997-02-07 2002-10-22 Arcturus Engineering, Inc. Laser capture microdissection method and apparatus
US6495195B2 (en) 1997-02-14 2002-12-17 Arcturus Engineering, Inc. Broadband absorbing film for laser capture microdissection
US7075640B2 (en) 1997-10-01 2006-07-11 Arcturus Bioscience, Inc. Consumable for laser capture microdissection
US5985085A (en) * 1997-10-01 1999-11-16 Arcturus Engineering, Inc. Method of manufacturing consumable for laser capture microdissection
US7473401B1 (en) 1997-12-04 2009-01-06 Mds Analytical Technologies (Us) Inc. Fluidic extraction of microdissected samples
US6452677B1 (en) 1998-02-13 2002-09-17 Micron Technology Inc. Method and apparatus for detecting defects in the manufacture of an electronic device
US6517669B2 (en) * 1999-02-26 2003-02-11 Micron Technology, Inc. Apparatus and method of detecting endpoint of a dielectric etch
KR100546289B1 (ko) 1999-04-23 2006-01-26 삼성전자주식회사 전자빔 검사 장치를 이용한 콘택홀의 인라인 모니터링 방법
US6528248B2 (en) 1999-04-29 2003-03-04 Arcturus Engineering, Inc. Processing technology for LCM samples
US6545491B2 (en) 1999-08-27 2003-04-08 Samsung Electronics Co., Ltd. Apparatus for detecting defects in semiconductor devices and methods of using the same
AU2922701A (en) 1999-11-04 2001-05-14 Arcturus Engineering, Inc. Automated laser capture microdissection
US6941007B1 (en) 2000-01-28 2005-09-06 Micron Technology, Inc. Pattern recognition with the use of multiple images
WO2001061311A1 (en) 2000-02-16 2001-08-23 Arcturus Engineering, Inc. Transfer film for laser microcapture
US6891167B2 (en) * 2000-06-15 2005-05-10 Kla-Tencor Technologies Apparatus and method for applying feedback control to a magnetic lens
US6486956B2 (en) * 2001-03-23 2002-11-26 Micron Technology, Inc. Reducing asymmetrically deposited film induced registration error
US8722357B2 (en) 2001-11-05 2014-05-13 Life Technologies Corporation Automated microdissection instrument
US10156501B2 (en) 2001-11-05 2018-12-18 Life Technologies Corporation Automated microdissection instrument for determining a location of a laser beam projection on a worksurface area
US6765203B1 (en) * 2003-01-31 2004-07-20 Shimadzu Corporation Pallet assembly for substrate inspection device and substrate inspection device
CA2580025A1 (en) 2004-09-09 2006-03-23 Molecular Devices Corporation Laser microdissection apparatus and method
KR100590574B1 (ko) * 2004-12-21 2006-06-19 삼성전자주식회사 전자기장 포커싱 장치 및 이를 채용한 전자빔 리소그라피시스템
US7662648B2 (en) * 2005-08-31 2010-02-16 Micron Technology, Inc. Integrated circuit inspection system
ATE464647T1 (de) * 2005-11-28 2010-04-15 Zeiss Carl Smt Ag Teilchenoptische komponente
JP5280174B2 (ja) * 2008-12-10 2013-09-04 日本電子株式会社 電子線装置及び電子線装置の動作方法
JP5357837B2 (ja) * 2010-06-25 2013-12-04 キヤノン株式会社 露光装置及びデバイスの製造方法
DE102011106433B4 (de) * 2011-07-04 2016-10-13 Integrated Dynamics Engineering Gmbh Integrierbare Magnetfeldkompensation für den Einsatz an Raster- und Transmissionselektronenmikroskopen, Schwingungsisolationssystem sowie Verfahren zum Abbilden, Untersuchen und / oder Bearbeiten einer Probe

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Publication number Priority date Publication date Assignee Title
US3829691A (en) * 1969-09-22 1974-08-13 Perkin Elmer Corp Image signal enhancement system for a scanning electron microscope
US4195323A (en) * 1977-09-02 1980-03-25 Magnex Corporation Thin film magnetic recording heads
DE2936911A1 (de) * 1979-09-12 1981-04-02 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zur regelung eines magnetischen ablenksystems
JPS5693318A (en) * 1979-12-10 1981-07-28 Fujitsu Ltd Electron beam exposure device
JPS5750756A (en) * 1980-09-12 1982-03-25 Jeol Ltd Objective lens current control method for scan type electron microscope
JPS5769656A (en) * 1980-10-17 1982-04-28 Hitachi Ltd X-ray microanalyzer
US4567369A (en) * 1982-06-18 1986-01-28 National Research Development Corporation Correction of astigmatism in electron beam instruments
US4544846A (en) * 1983-06-28 1985-10-01 International Business Machines Corporation Variable axis immersion lens electron beam projection system
JPS6129058A (ja) * 1984-07-18 1986-02-08 Hitachi Ltd 走査形電子顕微鏡の対物レンズ
JP2569011B2 (ja) * 1986-06-11 1997-01-08 株式会社日立製作所 走査電子顕微鏡
JPS63119147A (ja) * 1986-11-07 1988-05-23 Jeol Ltd 荷電粒子線の集束状態を検出する装置
US4928010A (en) * 1986-11-28 1990-05-22 Nippon Telegraph And Telephone Corp. Observing a surface using a charged particle beam
JPS63200444A (ja) * 1987-02-16 1988-08-18 Jeol Ltd 走査型電子顕微鏡等の自動非点収差補正方法
JPH01197951A (ja) * 1988-01-30 1989-08-09 Toshiba Corp 走査型電子顕微鏡

Also Published As

Publication number Publication date
EP0418894A2 (de) 1991-03-27
EP0418894B1 (de) 1996-08-21
EP0418894A3 (en) 1992-01-02
US5057689A (en) 1991-10-15
DE69028168T2 (de) 1997-01-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee