DE69025880D1 - Quantitative Beurteilung der geometrischen Abweichung hervorgerufen durch das Profil eines Halbleiterplättchens - Google Patents

Quantitative Beurteilung der geometrischen Abweichung hervorgerufen durch das Profil eines Halbleiterplättchens

Info

Publication number
DE69025880D1
DE69025880D1 DE69025880T DE69025880T DE69025880D1 DE 69025880 D1 DE69025880 D1 DE 69025880D1 DE 69025880 T DE69025880 T DE 69025880T DE 69025880 T DE69025880 T DE 69025880T DE 69025880 D1 DE69025880 D1 DE 69025880D1
Authority
DE
Germany
Prior art keywords
profile
semiconductor die
quantitative assessment
deviation caused
geometric deviation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69025880T
Other languages
English (en)
Other versions
DE69025880T2 (de
Inventor
Gabriele Barlocchi
Fabrizio Ghironi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Application granted granted Critical
Publication of DE69025880D1 publication Critical patent/DE69025880D1/de
Publication of DE69025880T2 publication Critical patent/DE69025880T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/28—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring contours or curvatures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE69025880T 1989-12-22 1990-12-18 Quantitative Beurteilung der geometrischen Abweichung hervorgerufen durch das Profil eines Halbleiterplättchens Expired - Fee Related DE69025880T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT08365289A IT1236602B (it) 1989-12-22 1989-12-22 Caratterizzazione quantitativa della distorsione geometrica subita da un profilo superficiale di un "wafer".

Publications (2)

Publication Number Publication Date
DE69025880D1 true DE69025880D1 (de) 1996-04-18
DE69025880T2 DE69025880T2 (de) 1996-07-25

Family

ID=11323655

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69025880T Expired - Fee Related DE69025880T2 (de) 1989-12-22 1990-12-18 Quantitative Beurteilung der geometrischen Abweichung hervorgerufen durch das Profil eines Halbleiterplättchens

Country Status (5)

Country Link
US (1) US5152168A (de)
EP (1) EP0434643B1 (de)
JP (1) JPH04218940A (de)
DE (1) DE69025880T2 (de)
IT (1) IT1236602B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770138B2 (en) * 2002-01-14 2004-08-03 Taiwan Semiconductor Manufacturing Co., Ltd Pattern for monitoring epitaxial layer washout
TWI233154B (en) * 2002-12-06 2005-05-21 Soitec Silicon On Insulator Method for recycling a substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3376502D1 (en) * 1983-12-27 1988-06-09 Ibm Deutschland Method and apparatus for measuring surface profiles
US4860229A (en) * 1984-01-20 1989-08-22 Ade Corporation Wafer flatness station
US4943719A (en) * 1989-01-17 1990-07-24 The Board Of Trustees Of The Leland Stanford University Microminiature cantilever stylus

Also Published As

Publication number Publication date
IT8983652A0 (it) 1989-12-22
US5152168A (en) 1992-10-06
IT8983652A1 (it) 1991-06-22
DE69025880T2 (de) 1996-07-25
EP0434643A3 (en) 1993-02-10
EP0434643A2 (de) 1991-06-26
EP0434643B1 (de) 1996-03-13
JPH04218940A (ja) 1992-08-10
IT1236602B (it) 1993-03-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee