DE69024485D1 - Verfahren zur Beobachtung einer mikroskopischen Flächenstruktur - Google Patents
Verfahren zur Beobachtung einer mikroskopischen FlächenstrukturInfo
- Publication number
- DE69024485D1 DE69024485D1 DE69024485T DE69024485T DE69024485D1 DE 69024485 D1 DE69024485 D1 DE 69024485D1 DE 69024485 T DE69024485 T DE 69024485T DE 69024485 T DE69024485 T DE 69024485T DE 69024485 D1 DE69024485 D1 DE 69024485D1
- Authority
- DE
- Germany
- Prior art keywords
- observing
- surface structure
- microscopic surface
- microscopic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/295—Electron or ion diffraction tubes
- H01J37/2955—Electron or ion diffraction tubes using scanning ray
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20058—Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/25—Tubes for localised analysis using electron or ion beams
- H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
- H01J2237/2538—Low energy electron microscopy [LEEM]
- H01J2237/2544—Diffraction [LEED]
- H01J2237/255—Reflection diffraction [RHEED]
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP90306073A EP0460305B1 (de) | 1990-06-04 | 1990-06-04 | Verfahren zur Beobachtung einer mikroskopischen Flächenstruktur |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69024485D1 true DE69024485D1 (de) | 1996-02-08 |
DE69024485T2 DE69024485T2 (de) | 1996-05-30 |
Family
ID=8205445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69024485T Expired - Fee Related DE69024485T2 (de) | 1990-06-04 | 1990-06-04 | Verfahren zur Beobachtung einer mikroskopischen Flächenstruktur |
Country Status (3)
Country | Link |
---|---|
US (1) | US5093573A (de) |
EP (1) | EP0460305B1 (de) |
DE (1) | DE69024485T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8920344D0 (en) * | 1989-09-08 | 1989-10-25 | Isis Innovation | Method and apparatus for imaging dislocations in materials |
FR2668262B1 (fr) * | 1990-10-23 | 1994-04-01 | Centre Nal Recherc Scientifique | Procede d'analyse aux rayons x de pieces monocristallines. |
JPH071688B2 (ja) * | 1991-02-15 | 1995-01-11 | 株式会社島津製作所 | 走査型反射電子回折顕微鏡 |
US5369275A (en) * | 1991-07-11 | 1994-11-29 | International Superconductivity Technology Center | Apparatus for solid surface analysis using X-ray spectroscopy |
US5397895A (en) * | 1992-09-24 | 1995-03-14 | The United States Of America As Represented By The Secretary Of Commerce | Photoionization mass spectroscopy flux monitor |
JPH06213832A (ja) * | 1993-01-18 | 1994-08-05 | Shimadzu Corp | 回折電子検出装置 |
GB2285169A (en) * | 1993-12-21 | 1995-06-28 | Secretary Trade Ind Brit | Scanning electron microscope grain imaging |
US5536940A (en) * | 1995-02-27 | 1996-07-16 | Advanced Micro Devices, Inc. | Energy filtering for electron back-scattered diffraction patterns |
JP3165615B2 (ja) * | 1995-03-17 | 2001-05-14 | 財団法人国際超電導産業技術研究センター | 表面元素分析方法及び装置 |
US5589690A (en) * | 1995-03-21 | 1996-12-31 | National Institute Of Standards And Technology | Apparatus and method for monitoring casting process |
US5734164A (en) * | 1996-11-26 | 1998-03-31 | Amray, Inc. | Charged particle apparatus having a canted column |
US6420701B1 (en) * | 1997-07-23 | 2002-07-16 | Canon Kabushiki Kaisha | Method of determining average crystallite size of material and apparatus and method for preparing thin film of the material |
DE10318562A1 (de) * | 2003-04-24 | 2004-11-11 | Carl Zeiss Sms Gmbh | Anordnung zur Inspektion von Objekten, insbesondere von Masken in der Mikrolithographie |
US9390888B2 (en) * | 2014-05-23 | 2016-07-12 | Industrial Technology Research Institute | Apparatus and method of applying small-angle electron scattering to characterize nanostructures on opaque substrate |
CN106596604B (zh) * | 2016-11-29 | 2019-05-21 | 国网辽宁省电力有限公司沈阳供电公司 | 一种反射电子衍射技术对高压电缆的无损检测装置 |
US10424458B2 (en) | 2017-08-21 | 2019-09-24 | Government Of The United States Of America, As Represented By The Secretary Of Commerce | Electron reflectometer and process for performing shape metrology |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4068123A (en) * | 1973-07-27 | 1978-01-10 | Nihon Denshi Kabushiki Kaisha | Scanning electron microscope |
JPS583588B2 (ja) * | 1978-02-03 | 1983-01-21 | 株式会社日立製作所 | イオン↓−電子複合分析装置 |
NL7902963A (nl) * | 1979-04-13 | 1980-10-15 | Philips Nv | Detektor voor elektronenmikroskoop. |
US4855013A (en) * | 1984-08-13 | 1989-08-08 | Agency Of Industrial Science And Technology | Method for controlling the thickness of a thin crystal film |
GB2204066A (en) * | 1987-04-06 | 1988-11-02 | Philips Electronic Associated | A method for manufacturing a semiconductor device having a layered structure |
US4912313A (en) * | 1987-11-27 | 1990-03-27 | Hitachi Ltd. | Method of measuring surface topography by using scanning electron microscope, and apparatus therefor |
US5010250A (en) * | 1990-01-09 | 1991-04-23 | The University Of Rochester | System for surface temperature measurement with picosecond time resolution |
-
1990
- 1990-06-04 US US07/532,422 patent/US5093573A/en not_active Expired - Fee Related
- 1990-06-04 DE DE69024485T patent/DE69024485T2/de not_active Expired - Fee Related
- 1990-06-04 EP EP90306073A patent/EP0460305B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5093573A (en) | 1992-03-03 |
EP0460305B1 (de) | 1995-12-27 |
DE69024485T2 (de) | 1996-05-30 |
EP0460305A1 (de) | 1991-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |