DE69022313D1 - Nichtflüchtige RAM-Bitzelle. - Google Patents

Nichtflüchtige RAM-Bitzelle.

Info

Publication number
DE69022313D1
DE69022313D1 DE69022313T DE69022313T DE69022313D1 DE 69022313 D1 DE69022313 D1 DE 69022313D1 DE 69022313 T DE69022313 T DE 69022313T DE 69022313 T DE69022313 T DE 69022313T DE 69022313 D1 DE69022313 D1 DE 69022313D1
Authority
DE
Germany
Prior art keywords
bit cell
volatile ram
ram bit
volatile
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69022313T
Other languages
English (en)
Other versions
DE69022313T2 (de
Inventor
Daniel Harrison Bennett
Kenelm Gerald Digby Murray
Gary Lawrence Dodd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hughes Microelectronics Ltd
Original Assignee
Hughes Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Microelectronics Ltd filed Critical Hughes Microelectronics Ltd
Application granted granted Critical
Publication of DE69022313D1 publication Critical patent/DE69022313D1/de
Publication of DE69022313T2 publication Critical patent/DE69022313T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Memories (AREA)
DE69022313T 1989-07-13 1990-07-03 Nichtflüchtige RAM-Bitzelle. Expired - Fee Related DE69022313T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898916019A GB8916019D0 (en) 1989-07-13 1989-07-13 A non-volatile ram bit cell

Publications (2)

Publication Number Publication Date
DE69022313D1 true DE69022313D1 (de) 1995-10-19
DE69022313T2 DE69022313T2 (de) 1996-02-22

Family

ID=10659971

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022313T Expired - Fee Related DE69022313T2 (de) 1989-07-13 1990-07-03 Nichtflüchtige RAM-Bitzelle.

Country Status (8)

Country Link
US (1) US5065366A (de)
EP (1) EP0408233B1 (de)
JP (1) JPH03123072A (de)
CA (1) CA2019310C (de)
DE (1) DE69022313T2 (de)
ES (1) ES2077030T3 (de)
GB (1) GB8916019D0 (de)
MX (1) MX172805B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148436A (en) * 1990-10-15 1992-09-15 Motorola, Inc. Circuit for detecting false read data from eprom
US5272368A (en) * 1991-05-10 1993-12-21 Altera Corporation Complementary low power non-volatile reconfigurable EEcell
WO1996030948A1 (fr) * 1995-03-31 1996-10-03 Tadashi Shibata Memoire non volatile a semi-conducteurs
TWI333545B (en) * 2003-04-02 2010-11-21 Cholestech Corp Adhered membranes retaining porosity and biological activity

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768169A (en) * 1983-10-28 1988-08-30 Seeq Technology, Inc. Fault-tolerant memory array
US4833646A (en) * 1985-03-04 1989-05-23 Lattice Semiconductor Corp. Programmable logic device with limited sense currents and noise reduction
IT1221018B (it) * 1985-03-28 1990-06-21 Giulio Casagrande Dispositivo per verificare celle di memoria in funzione del salto di soglia ottenibile in fase di scrittura
IT1214246B (it) * 1987-05-27 1990-01-10 Sgs Microelettronica Spa Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.
JPS6414798A (en) * 1987-07-09 1989-01-18 Fujitsu Ltd Non-volatile memory device
JPS6476596A (en) * 1987-09-18 1989-03-22 Oki Electric Ind Co Ltd Error of eeprom detecting device
US4972144A (en) * 1989-11-28 1990-11-20 Motorola, Inc. Testable multiple channel decoder

Also Published As

Publication number Publication date
EP0408233B1 (de) 1995-09-13
GB8916019D0 (en) 1989-08-31
EP0408233A2 (de) 1991-01-16
DE69022313T2 (de) 1996-02-22
CA2019310A1 (en) 1991-01-13
EP0408233A3 (en) 1992-04-22
ES2077030T3 (es) 1995-11-16
JPH03123072A (ja) 1991-05-24
US5065366A (en) 1991-11-12
MX172805B (es) 1994-01-13
CA2019310C (en) 2001-10-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee