DE69021956D1 - Strahlungsempfindliche Halbleiteranordnung und Lese- oder Schreibeinheit mit einer derartigen strahlungsempfindlichen Halbleiteranordnung. - Google Patents

Strahlungsempfindliche Halbleiteranordnung und Lese- oder Schreibeinheit mit einer derartigen strahlungsempfindlichen Halbleiteranordnung.

Info

Publication number
DE69021956D1
DE69021956D1 DE69021956T DE69021956T DE69021956D1 DE 69021956 D1 DE69021956 D1 DE 69021956D1 DE 69021956 T DE69021956 T DE 69021956T DE 69021956 T DE69021956 T DE 69021956T DE 69021956 D1 DE69021956 D1 DE 69021956D1
Authority
DE
Germany
Prior art keywords
radiation
semiconductor arrangement
sensitive semiconductor
reading
writing unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69021956T
Other languages
English (en)
Other versions
DE69021956T2 (de
Inventor
Martinus Petrus Maria Bierhoff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69021956D1 publication Critical patent/DE69021956D1/de
Publication of DE69021956T2 publication Critical patent/DE69021956T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/13—Optical detectors therefor
    • G11B7/131—Arrangement of detectors in a multiple array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Head (AREA)
  • Measurement Of Radiation (AREA)
DE69021956T 1989-06-28 1990-06-25 Strahlungsempfindliche Halbleiteranordnung und Lese- oder Schreibeinheit mit einer derartigen strahlungsempfindlichen Halbleiteranordnung. Expired - Fee Related DE69021956T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8901629A NL8901629A (nl) 1989-06-28 1989-06-28 Stralingsgevoelige halfgeleiderinrichting en uitlees- of schrijfeenheid bevattende een dergelijke stralingsgevoelige halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
DE69021956D1 true DE69021956D1 (de) 1995-10-05
DE69021956T2 DE69021956T2 (de) 1996-04-18

Family

ID=19854915

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021956T Expired - Fee Related DE69021956T2 (de) 1989-06-28 1990-06-25 Strahlungsempfindliche Halbleiteranordnung und Lese- oder Schreibeinheit mit einer derartigen strahlungsempfindlichen Halbleiteranordnung.

Country Status (6)

Country Link
US (1) US5097307A (de)
EP (1) EP0405670B1 (de)
JP (1) JP3060233B2 (de)
KR (1) KR100199528B1 (de)
DE (1) DE69021956T2 (de)
NL (1) NL8901629A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2705326B2 (ja) * 1991-02-19 1998-01-28 日本電気株式会社 光磁気ヘッド装置
US5289015A (en) * 1991-04-25 1994-02-22 At&T Bell Laboratories Planar fet-seed integrated circuits
JP2793085B2 (ja) * 1992-06-25 1998-09-03 三洋電機株式会社 光半導体装置とその製造方法
JP2731115B2 (ja) * 1994-07-14 1998-03-25 シャープ株式会社 分割型受光素子
JP2828244B2 (ja) * 1995-09-26 1998-11-25 シャープ株式会社 受光素子
TW423103B (en) * 1997-01-27 2001-02-21 Sharp Kk Divided photodiode
DE10223202A1 (de) 2002-05-24 2003-12-11 Fraunhofer Ges Forschung Photodiode
DE10223201C1 (de) * 2002-05-24 2003-05-28 Fraunhofer Ges Forschung Optikerfassungsvorrichtung
JP2006505930A (ja) * 2002-11-07 2006-02-16 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 逆さ光検出器
JP5967944B2 (ja) 2012-01-18 2016-08-10 キヤノン株式会社 固体撮像装置およびカメラ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3786264A (en) * 1973-01-02 1974-01-15 Gen Electric High speed light detector amplifier
NL8003906A (nl) * 1980-07-07 1982-02-01 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
JPH0633537Y2 (ja) * 1984-06-30 1994-08-31 ソニ−株式会社 感光性半導体装置
JPS61154063A (ja) * 1984-12-26 1986-07-12 Toshiba Corp 光半導体装置およびその製造方法
NL8500059A (nl) * 1985-01-11 1986-08-01 Philips Nv Inrichting voor het weergeven van informatie van een optisch uitleesbare registratiedrager.
NL8601719A (nl) * 1986-07-02 1988-02-01 Philips Nv Electronisch instelbare positiegevoelige stralingsdetector, focusfoutdetectiestelsel voorzien van een dergelijke stralingsdetector, en optische lees- en/of schrijfinrichting voorzien van een dergelijk focusfoutdetectiestelsel.
JP2757985B2 (ja) * 1986-10-01 1998-05-25 ソニー株式会社 受光装置とその製造方法

Also Published As

Publication number Publication date
EP0405670A1 (de) 1991-01-02
US5097307A (en) 1992-03-17
EP0405670B1 (de) 1995-08-30
KR910001203A (ko) 1991-01-30
DE69021956T2 (de) 1996-04-18
JPH0335559A (ja) 1991-02-15
JP3060233B2 (ja) 2000-07-10
NL8901629A (nl) 1991-01-16
KR100199528B1 (ko) 1999-06-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee