DE69020416D1 - Hochleistungs-Halbleiterrelais. - Google Patents

Hochleistungs-Halbleiterrelais.

Info

Publication number
DE69020416D1
DE69020416D1 DE69020416T DE69020416T DE69020416D1 DE 69020416 D1 DE69020416 D1 DE 69020416D1 DE 69020416 T DE69020416 T DE 69020416T DE 69020416 T DE69020416 T DE 69020416T DE 69020416 D1 DE69020416 D1 DE 69020416D1
Authority
DE
Germany
Prior art keywords
solid state
high performance
state relay
performance solid
relay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69020416T
Other languages
English (en)
Other versions
DE69020416T2 (de
Inventor
Joseph Pernyeszi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE69020416D1 publication Critical patent/DE69020416D1/de
Publication of DE69020416T2 publication Critical patent/DE69020416T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
DE69020416T 1989-04-14 1990-04-04 Hochleistungs-Halbleiterrelais. Expired - Fee Related DE69020416T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/338,872 US4902901A (en) 1989-04-14 1989-04-14 High-power solid state relay employing photosensitive current augmenting means for faster turn-on time

Publications (2)

Publication Number Publication Date
DE69020416D1 true DE69020416D1 (de) 1995-08-03
DE69020416T2 DE69020416T2 (de) 1996-05-02

Family

ID=23326506

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69020416T Expired - Fee Related DE69020416T2 (de) 1989-04-14 1990-04-04 Hochleistungs-Halbleiterrelais.

Country Status (4)

Country Link
US (1) US4902901A (de)
EP (1) EP0393876B1 (de)
JP (1) JP3121338B2 (de)
DE (1) DE69020416T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3926200A1 (de) * 1989-08-08 1991-02-14 Siemens Ag Lichtsteuerbares halbleiterbauelement mit einem feldeffekttransistor
US5138177A (en) * 1991-03-26 1992-08-11 At&T Bell Laboratories Solid-state relay
US5146100A (en) * 1991-05-21 1992-09-08 Keithley Instruments, Inc. High voltage solid-state switch with current limit
US5189307A (en) * 1992-03-13 1993-02-23 Empi, Inc. Isolated current mirror with optical insulator generating feedback signal
US5221847A (en) * 1992-06-26 1993-06-22 At&T Bell Laboratories Break-before-make control for form C solid-state relays with current limiter bypass
US5298817A (en) * 1993-02-09 1994-03-29 At&T Bell Laboratories High-frequency solid-state relay
US5360979A (en) * 1993-08-05 1994-11-01 At&T Bell Laboratories Fast turn-off circuit for solid-state relays or the like
US5391997A (en) * 1993-10-28 1995-02-21 Motorola, Inc. Optically isolated N-channel MOSFET driver
US5532498A (en) * 1994-12-06 1996-07-02 At&T Corp. High sensitivity control circuit for optical solid-state relays
US5693952A (en) * 1995-12-18 1997-12-02 Sulzer Intermedics Inc. Optically controlled high-voltage switch for an implantable defibrillator
DE29617686U1 (de) * 1996-10-11 1996-11-28 Festo Kg Feldbusanordnung
DE19735583C1 (de) * 1997-08-16 1999-03-18 Daimler Benz Ag Verfahren und Anordnung zum Ansteuern eines Schaltelements
US6304977B1 (en) 1997-10-07 2001-10-16 Festo Ag & Co. Field bus arrangement
US6035235A (en) * 1998-03-30 2000-03-07 Angeion Corp. Amplified voltage output switching network for a self-powered defibrillator
DE29812092U1 (de) * 1998-07-07 1999-11-18 Ic Haus Gmbh Elektronischer Wechselspannungsschalter
US6555935B1 (en) * 2000-05-18 2003-04-29 Rockwell Automation Technologies, Inc. Apparatus and method for fast FET switching in a digital output device
US6894349B2 (en) * 2001-06-08 2005-05-17 Intersil Americas Inc. Lateral DMOS structure with lateral extension structure for reduced charge trapping in gate oxide
US6608445B2 (en) 2001-12-12 2003-08-19 Honeywell International Inc. Efficient solid state switching and control system for retractable aircraft landing lights
JP2006186344A (ja) * 2004-12-02 2006-07-13 Toshiba Corp 光結合装置
US9374076B2 (en) 2012-03-06 2016-06-21 Mcq Inc. Solid state relay circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
US4419586A (en) * 1981-08-27 1983-12-06 Motorola, Inc. Solid-state relay and regulator
US4564770A (en) * 1983-03-29 1986-01-14 Rca Corporation Solid state relay with fast turnoff
US4665316A (en) * 1984-11-21 1987-05-12 Telmos Incorporated Photovoltaic relay switch
US4647794A (en) * 1985-05-22 1987-03-03 Teledyne Industries, Inc. Solid state relay having non overlapping switch closures
US4754175A (en) * 1985-12-04 1988-06-28 Nec Corporation Solid state relay having a thyristor discharge circuit
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
US4682061A (en) * 1986-05-01 1987-07-21 Honeywell Inc. MOSFET transistor switch control

Also Published As

Publication number Publication date
EP0393876A2 (de) 1990-10-24
DE69020416T2 (de) 1996-05-02
US4902901A (en) 1990-02-20
JP3121338B2 (ja) 2000-12-25
EP0393876B1 (de) 1995-06-28
EP0393876A3 (de) 1991-04-03
JPH02295220A (ja) 1990-12-06

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE. LTD.,

8339 Ceased/non-payment of the annual fee