DE69018580D1 - Zerstäubungsgerät. - Google Patents

Zerstäubungsgerät.

Info

Publication number
DE69018580D1
DE69018580D1 DE69018580T DE69018580T DE69018580D1 DE 69018580 D1 DE69018580 D1 DE 69018580D1 DE 69018580 T DE69018580 T DE 69018580T DE 69018580 T DE69018580 T DE 69018580T DE 69018580 D1 DE69018580 D1 DE 69018580D1
Authority
DE
Germany
Prior art keywords
atomizer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69018580T
Other languages
English (en)
Other versions
DE69018580T2 (de
Inventor
Junji Shiota
Ichiro Ohno
Hidetaka Uchiumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of DE69018580D1 publication Critical patent/DE69018580D1/de
Publication of DE69018580T2 publication Critical patent/DE69018580T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
DE69018580T 1989-12-07 1990-12-05 Zerstäubungsgerät. Expired - Fee Related DE69018580T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1316365A JP2934711B2 (ja) 1989-12-07 1989-12-07 スパッタ装置

Publications (2)

Publication Number Publication Date
DE69018580D1 true DE69018580D1 (de) 1995-05-18
DE69018580T2 DE69018580T2 (de) 1995-08-10

Family

ID=18076287

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69018580T Expired - Fee Related DE69018580T2 (de) 1989-12-07 1990-12-05 Zerstäubungsgerät.

Country Status (4)

Country Link
US (1) US5514259A (de)
EP (1) EP0431592B1 (de)
JP (1) JP2934711B2 (de)
DE (1) DE69018580T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656146A (en) * 1996-04-26 1997-08-12 Phoenix Precision Graphics, Inc. Single phase fluid gas extractor for electrophoretic purifier systems
US5873983A (en) * 1997-01-13 1999-02-23 Vanguard International Semiconductor Corporation Method for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers
DE19734633C2 (de) * 1997-08-11 1999-08-26 Forschungszentrum Juelich Gmbh Hochdruck-Magnetron-Kathode
US6497802B2 (en) 1999-02-12 2002-12-24 Applied Materials, Inc. Self ionized plasma sputtering
US6306265B1 (en) 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US6183614B1 (en) 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6290825B1 (en) * 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US6495000B1 (en) * 2001-07-16 2002-12-17 Sharp Laboratories Of America, Inc. System and method for DC sputtering oxide films with a finned anode
US6776848B2 (en) * 2002-01-17 2004-08-17 Applied Materials, Inc. Motorized chamber lid
US20080308417A1 (en) * 2005-03-14 2008-12-18 Toyoaki Hirata Sputtering Apparatus
US20070235320A1 (en) * 2006-04-06 2007-10-11 Applied Materials, Inc. Reactive sputtering chamber with gas distribution tubes
JP5222281B2 (ja) * 2006-04-06 2013-06-26 アプライド マテリアルズ インコーポレイテッド ラージエリア基板への酸化亜鉛透明導電性酸化物の反応性スパッタリング
US20080011601A1 (en) * 2006-07-14 2008-01-17 Applied Materials, Inc. Cooled anodes
US8647486B2 (en) * 2009-01-05 2014-02-11 Applied Materials, Inc. Magnet bar support system
US8673122B2 (en) 2009-04-07 2014-03-18 Magna Mirrors Of America, Inc. Hot tile sputtering system
US20110263065A1 (en) * 2010-04-22 2011-10-27 Primestar Solar, Inc. Modular system for high-rate deposition of thin film layers on photovoltaic module substrates
CN103898462B (zh) * 2012-12-29 2017-08-22 深圳富泰宏精密工业有限公司 磁控溅射镀膜装置
US11414747B2 (en) * 2018-06-26 2022-08-16 Tokyo Electron Limited Sputtering device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
US4401539A (en) * 1981-01-30 1983-08-30 Hitachi, Ltd. Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
US4395323A (en) * 1981-04-17 1983-07-26 Denton Vacuum Inc. Apparatus for improving a sputtering process
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
NL8200902A (nl) * 1982-03-05 1983-10-03 Philips Nv Magnetron-kathodesputtersysteem.
NL8202092A (nl) * 1982-05-21 1983-12-16 Philips Nv Magnetronkathodesputtersysteem.
US4558388A (en) * 1983-11-02 1985-12-10 Varian Associates, Inc. Substrate and substrate holder
JPH0627323B2 (ja) * 1983-12-26 1994-04-13 株式会社日立製作所 スパツタリング方法及びその装置
DE3503398A1 (de) * 1985-02-01 1986-08-07 W.C. Heraeus Gmbh, 6450 Hanau Sputteranlage zum reaktiven beschichten eines substrates mit hartstoffen
US4749465A (en) * 1985-05-09 1988-06-07 Seagate Technology In-line disk sputtering system
DE3521053A1 (de) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat
JPS6260866A (ja) * 1985-08-02 1987-03-17 Fujitsu Ltd マグネトロンスパツタ装置
DE3731444A1 (de) * 1987-09-18 1989-03-30 Leybold Ag Vorrichtung zum beschichten von substraten
JPH01268859A (ja) * 1988-04-20 1989-10-26 Casio Comput Co Ltd 透明導電膜の形成方法および形成装置
DE3821207A1 (de) * 1988-06-23 1989-12-28 Leybold Ag Anordnung zum beschichten eines substrats mit dielektrika
DE3929695C2 (de) * 1989-09-07 1996-12-19 Leybold Ag Vorrichtung zum Beschichten eines Substrats

Also Published As

Publication number Publication date
EP0431592B1 (de) 1995-04-12
US5514259A (en) 1996-05-07
EP0431592A2 (de) 1991-06-12
DE69018580T2 (de) 1995-08-10
JP2934711B2 (ja) 1999-08-16
EP0431592A3 (en) 1991-07-31
JPH03177569A (ja) 1991-08-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee
8370 Indication related to discontinuation of the patent is to be deleted
8339 Ceased/non-payment of the annual fee