DE69013613D1 - Mikrokanal-Elektronenvervielfacher und Herstellungsverfahren. - Google Patents

Mikrokanal-Elektronenvervielfacher und Herstellungsverfahren.

Info

Publication number
DE69013613D1
DE69013613D1 DE69013613T DE69013613T DE69013613D1 DE 69013613 D1 DE69013613 D1 DE 69013613D1 DE 69013613 T DE69013613 T DE 69013613T DE 69013613 T DE69013613 T DE 69013613T DE 69013613 D1 DE69013613 D1 DE 69013613D1
Authority
DE
Germany
Prior art keywords
manufacturing process
electron multiplier
microchannel electron
microchannel
multiplier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69013613T
Other languages
English (en)
Other versions
DE69013613T2 (de
Inventor
Jerry R Horton
G William Tasker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Netoptix Inc
Original Assignee
Corning Netoptix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Netoptix Inc filed Critical Corning Netoptix Inc
Application granted granted Critical
Publication of DE69013613D1 publication Critical patent/DE69013613D1/de
Publication of DE69013613T2 publication Critical patent/DE69013613T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04Electron multipliers
    • H01J43/06Electrode arrangements
    • H01J43/18Electrode arrangements using essentially more than one dynode
    • H01J43/24Dynodes having potential gradient along their surfaces
    • H01J43/246Microchannel plates [MCP]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/12Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/32Secondary emission electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/34Photoemissive electrodes
    • H01J2201/342Cathodes
    • H01J2201/3421Composition of the emitting surface
    • H01J2201/3423Semiconductors, e.g. GaAs, NEA emitters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/34Photoemissive electrodes
    • H01J2201/342Cathodes
    • H01J2201/3421Composition of the emitting surface
    • H01J2201/3426Alkaline metal compounds, e.g. Na-K-Sb

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Tubes For Measurement (AREA)
DE69013613T 1989-08-18 1990-08-03 Mikrokanal-Elektronenvervielfacher und Herstellungsverfahren. Expired - Fee Related DE69013613T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/395,586 US5086248A (en) 1989-08-18 1989-08-18 Microchannel electron multipliers

Publications (2)

Publication Number Publication Date
DE69013613D1 true DE69013613D1 (de) 1994-12-01
DE69013613T2 DE69013613T2 (de) 1995-03-02

Family

ID=23563658

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69013613T Expired - Fee Related DE69013613T2 (de) 1989-08-18 1990-08-03 Mikrokanal-Elektronenvervielfacher und Herstellungsverfahren.

Country Status (4)

Country Link
US (1) US5086248A (de)
EP (1) EP0413481B1 (de)
JP (1) JPH03116627A (de)
DE (1) DE69013613T2 (de)

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US5569355A (en) * 1995-01-11 1996-10-29 Center For Advanced Fiberoptic Applications Method for fabrication of microchannel electron multipliers
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DE19506165A1 (de) * 1995-02-22 1996-05-23 Siemens Ag Elektronenvervielfacher und Verfahren zu dessen Herstellung
US6522061B1 (en) 1995-04-04 2003-02-18 Harry F. Lockwood Field emission device with microchannel gain element
US5729244A (en) * 1995-04-04 1998-03-17 Lockwood; Harry F. Field emission device with microchannel gain element
US5680008A (en) * 1995-04-05 1997-10-21 Advanced Technology Materials, Inc. Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials
US6045677A (en) * 1996-02-28 2000-04-04 Nanosciences Corporation Microporous microchannel plates and method of manufacturing same
TW460604B (en) * 1998-10-13 2001-10-21 Winbond Electronics Corp A one-sided and mass production method of liquid phase deposition
US6492657B1 (en) * 2000-01-27 2002-12-10 Burle Technologies, Inc. Integrated semiconductor microchannel plate and planar diode electron flux amplifier and collector
KR100873634B1 (ko) * 2002-02-20 2008-12-12 삼성전자주식회사 탄소나노튜브를 포함하는 전자증폭기 및 그 제조방법
US6828714B2 (en) * 2002-05-03 2004-12-07 Nova Scientific, Inc. Electron multipliers and radiation detectors
JP4133429B2 (ja) 2003-02-24 2008-08-13 浜松ホトニクス株式会社 半導体装置
US7154086B2 (en) * 2003-03-19 2006-12-26 Burle Technologies, Inc. Conductive tube for use as a reflectron lens
WO2004112072A2 (en) * 2003-05-29 2004-12-23 Nova Scientific, Inc. Electron multipliers and radiation detectors
US7019446B2 (en) 2003-09-25 2006-03-28 The Regents Of The University Of California Foil electron multiplier
US7233007B2 (en) * 2004-03-01 2007-06-19 Nova Scientific, Inc. Radiation detectors and methods of detecting radiation
US7615161B2 (en) * 2005-08-19 2009-11-10 General Electric Company Simplified way to manufacture a low cost cast type collimator assembly
DE102005040297B3 (de) * 2005-08-21 2007-02-08 Hahn-Meitner-Institut Berlin Gmbh Mikrokanalplatte mit Ionenspurkanälen, Verfahren zur Herstellung und Anwendung
WO2007035434A2 (en) * 2005-09-16 2007-03-29 Arradiance, Inc. Microchannel amplifier with tailored pore resistance
US7687978B2 (en) * 2006-02-27 2010-03-30 Itt Manufacturing Enterprises, Inc. Tandem continuous channel electron multiplier
US20080073516A1 (en) * 2006-03-10 2008-03-27 Laprade Bruce N Resistive glass structures used to shape electric fields in analytical instruments
US20080257713A1 (en) * 2007-04-17 2008-10-23 Robert Woodhull Grant Catalytic reactors with active boundary layer control
US7855493B2 (en) * 2008-02-27 2010-12-21 Arradiance, Inc. Microchannel plate devices with multiple emissive layers
US8052884B2 (en) * 2008-02-27 2011-11-08 Arradiance, Inc. Method of fabricating microchannel plate devices with multiple emissive layers
US8969823B2 (en) 2011-01-21 2015-03-03 Uchicago Argonne, Llc Microchannel plate detector and methods for their fabrication
US9105379B2 (en) 2011-01-21 2015-08-11 Uchicago Argonne, Llc Tunable resistance coatings
US8921799B2 (en) 2011-01-21 2014-12-30 Uchicago Argonne, Llc Tunable resistance coatings
DE102011077058A1 (de) * 2011-06-07 2012-12-13 Siemens Aktiengesellschaft Strahlungsdetektor und bildgebendes System
JP2013254584A (ja) * 2012-06-05 2013-12-19 Hoya Corp 電子増幅用ガラス基板およびその製造方法
US11326255B2 (en) 2013-02-07 2022-05-10 Uchicago Argonne, Llc ALD reactor for coating porous substrates
CN104326439B (zh) * 2014-08-22 2016-09-21 华东师范大学 一种改进硅微通道板表面形貌的方法
US9704900B1 (en) * 2016-04-13 2017-07-11 Uchicago Argonne, Llc Systems and methods for forming microchannel plate (MCP) photodetector assemblies
JP6340102B1 (ja) * 2017-03-01 2018-06-06 浜松ホトニクス株式会社 マイクロチャンネルプレート及び電子増倍体
CN108615568B (zh) * 2018-04-27 2020-04-10 中国建筑材料科学研究总院有限公司 具有光滑反射壁的龙虾眼型成像元件及其制备方法
US11854777B2 (en) * 2019-07-29 2023-12-26 Thermo Finnigan Llc Ion-to-electron conversion dynode for ion imaging applications
US11111578B1 (en) 2020-02-13 2021-09-07 Uchicago Argonne, Llc Atomic layer deposition of fluoride thin films
LU101723B1 (en) * 2020-03-31 2021-09-30 Univ Hamburg Microchannel sensor and method of manufacturing the same
US11901169B2 (en) 2022-02-14 2024-02-13 Uchicago Argonne, Llc Barrier coatings

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US3519870A (en) * 1967-05-18 1970-07-07 Xerox Corp Spiraled strip material having parallel grooves forming plurality of electron multiplier channels
FR2040610A5 (de) * 1969-04-04 1971-01-22 Labo Electronique Physique
US3634712A (en) * 1970-03-16 1972-01-11 Itt Channel-type electron multiplier for use with display device
US3911167A (en) * 1970-05-01 1975-10-07 Texas Instruments Inc Electron multiplier and method of making same
GB1352733A (en) * 1971-07-08 1974-05-08 Mullard Ltd Electron multipliers
US3885180A (en) * 1973-07-10 1975-05-20 Us Army Microchannel imaging display device
CA1046127A (en) * 1974-10-14 1979-01-09 Matsushita Electric Industrial Co., Ltd. Secondary-electron multiplier including electron-conductive high-polymer composition
FR2399733A1 (fr) * 1977-08-05 1979-03-02 Labo Electronique Physique Dispositif de detection et localisation d'evenements photoniques ou particulaires
FR2434480A1 (fr) * 1978-08-21 1980-03-21 Labo Electronique Physique Dispositif multiplicateur d'electrons a galettes de microcanaux antiretour optique pour tube intensificateur d'images
DE3275447D1 (en) * 1982-07-03 1987-03-19 Ibm Deutschland Process for the formation of grooves having essentially vertical lateral silicium walls by reactive ion etching
DE3337227A1 (de) * 1983-10-13 1985-04-25 Gesellschaft für Schwerionenforschung mbH Darmstadt, 6100 Darmstadt Verfahren zum bestimmen des durchmessers von mikroloechern
US4577133A (en) * 1983-10-27 1986-03-18 Wilson Ronald E Flat panel display and method of manufacture
US4624739A (en) * 1985-08-09 1986-11-25 International Business Machines Corporation Process using dry etchant to avoid mask-and-etch cycle
US4825118A (en) * 1985-09-06 1989-04-25 Hamamatsu Photonics Kabushiki Kaisha Electron multiplier device
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FR2592523A1 (fr) * 1985-12-31 1987-07-03 Hyperelec Sa Element multiplicateur a haute efficacite de collection dispositif multiplicateur comportant cet element multiplicateur, application a un tube photomultiplicateur et procede de realisation
JPS62254338A (ja) * 1986-01-25 1987-11-06 Toshiba Corp マイクロチヤンネルプレ−ト及びその製造方法
US4780395A (en) * 1986-01-25 1988-10-25 Kabushiki Kaisha Toshiba Microchannel plate and a method for manufacturing the same
US4786361A (en) * 1986-03-05 1988-11-22 Kabushiki Kaisha Toshiba Dry etching process
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JPS62253785A (ja) * 1986-04-28 1987-11-05 Tokyo Univ 間欠的エツチング方法
US4698129A (en) * 1986-05-01 1987-10-06 Oregon Graduate Center Focused ion beam micromachining of optical surfaces in materials
DE3615519A1 (de) * 1986-05-07 1987-11-12 Siemens Ag Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten
FR2599557A1 (fr) * 1986-06-03 1987-12-04 Radiotechnique Compelec Plaque multiplicatrice d'electrons a multiplication dirigee, element multiplicateur comprenant ladite plaque, dispositif multiplicateur comportant ledit element et application dudit dispositif a un tube photomultiplicateur
US4693781A (en) * 1986-06-26 1987-09-15 Motorola, Inc. Trench formation process
US4714861A (en) * 1986-10-01 1987-12-22 Galileo Electro-Optics Corp. Higher frequency microchannel plate
US4707218A (en) * 1986-10-28 1987-11-17 International Business Machines Corporation Lithographic image size reduction
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method

Also Published As

Publication number Publication date
DE69013613T2 (de) 1995-03-02
EP0413481B1 (de) 1994-10-26
US5086248A (en) 1992-02-04
JPH03116627A (ja) 1991-05-17
EP0413481A3 (en) 1992-01-02
EP0413481A2 (de) 1991-02-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee