DE69000929D1 - Integrierte cmos-schaltungsstruktur, die gegen elektrostatische entladungen geschuetzt ist. - Google Patents

Integrierte cmos-schaltungsstruktur, die gegen elektrostatische entladungen geschuetzt ist.

Info

Publication number
DE69000929D1
DE69000929D1 DE9090402012T DE69000929T DE69000929D1 DE 69000929 D1 DE69000929 D1 DE 69000929D1 DE 9090402012 T DE9090402012 T DE 9090402012T DE 69000929 T DE69000929 T DE 69000929T DE 69000929 D1 DE69000929 D1 DE 69000929D1
Authority
DE
Germany
Prior art keywords
circuit structure
electrostatic discharge
protected against
cmos circuit
against electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE9090402012T
Other languages
English (en)
Other versions
DE69000929T2 (de
Inventor
Francois Tailliet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69000929D1 publication Critical patent/DE69000929D1/de
Publication of DE69000929T2 publication Critical patent/DE69000929T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE9090402012T 1989-07-13 1990-07-12 Integrierte cmos-schaltungsstruktur, die gegen elektrostatische entladungen geschuetzt ist. Expired - Fee Related DE69000929T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8909548A FR2649830B1 (fr) 1989-07-13 1989-07-13 Structure de circuit integre cmos protege contre les decharges electrostatiques

Publications (2)

Publication Number Publication Date
DE69000929D1 true DE69000929D1 (de) 1993-03-25
DE69000929T2 DE69000929T2 (de) 1993-09-23

Family

ID=9383815

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9090402012T Expired - Fee Related DE69000929T2 (de) 1989-07-13 1990-07-12 Integrierte cmos-schaltungsstruktur, die gegen elektrostatische entladungen geschuetzt ist.

Country Status (5)

Country Link
US (1) US5016078A (de)
EP (1) EP0408457B1 (de)
JP (1) JPH0715946B2 (de)
DE (1) DE69000929T2 (de)
FR (1) FR2649830B1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960002094B1 (ko) * 1990-11-30 1996-02-10 가부시키가이샤 도시바 입력보호회로를 갖춘 반도체장치
EP0517391A1 (de) * 1991-06-05 1992-12-09 STMicroelectronics, Inc. ESD-Schutzschaltung
US5229635A (en) * 1991-08-21 1993-07-20 Vlsi Technology, Inc. ESD protection circuit and method for power-down application
US5250834A (en) * 1991-09-19 1993-10-05 International Business Machines Corporation Silicide interconnection with schottky barrier diode isolation
US5272371A (en) * 1991-11-19 1993-12-21 Sgs-Thomson Microelectronics, Inc. Electrostatic discharge protection structure
FR2690786A1 (fr) * 1992-04-30 1993-10-29 Sgs Thomson Microelectronics Sa Dispositif de protection d'un circuit intégré contre les décharges électrostatiques.
US5428498A (en) * 1992-09-28 1995-06-27 Xerox Corporation Office environment level electrostatic discharge protection
FR2716294B1 (fr) * 1994-01-28 1996-05-31 Sgs Thomson Microelectronics Procédé de réalisation d'un transistor bipolaire pour protection d'un circuit intégré contre les décharges électrostatiques.
JPH07283405A (ja) * 1994-04-13 1995-10-27 Toshiba Corp 半導体装置の保護回路
EP0688054A3 (de) * 1994-06-13 1996-06-05 Symbios Logic Inc Schutzstruktur für eine integrierte Schaltungshalbleiteranordnung gegen elektrostatische Entladungen
JP3332123B2 (ja) * 1994-11-10 2002-10-07 株式会社東芝 入力保護回路及びこれを用いた半導体装置
FR2734406B1 (fr) * 1995-05-19 1997-08-01 Sgs Thomson Microelectronics Element de protection de circuit integre de type mos
KR100211537B1 (ko) * 1995-11-13 1999-08-02 김영환 정전기 방지기능을 갖는 트랜지스터 및 그 제조방법과 이를 이용한 데이타 출력버퍼
FR2748855B1 (fr) * 1996-05-15 1998-07-10 Sgs Thomson Microelectronics Procede de fabrication d'un dispositif de protection contre les surtensions pour un circuit integre cmos
US5981323A (en) * 1996-05-15 1999-11-09 Sgs-Thomson Microelectronics S.A. Method and apparatus for protecting a device against voltage surges
US6225679B1 (en) 1997-05-12 2001-05-01 Sgs-Thomson Microelectronics S.A. Method and apparatus for protecting a device against voltage surges
TW399337B (en) * 1998-06-09 2000-07-21 Koninkl Philips Electronics Nv Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4314267A (en) * 1978-06-13 1982-02-02 Ibm Corporation Dense high performance JFET compatible with NPN transistor formation and merged BIFET
JPS56131954A (en) * 1980-03-19 1981-10-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
GB2173037A (en) * 1985-03-29 1986-10-01 Philips Electronic Associated Semiconductor devices employing conductivity modulation
CA1289267C (en) * 1987-09-24 1991-09-17 Mitel Corporation Latchup and electrostatic discharge protection structure
US4918026A (en) * 1989-03-17 1990-04-17 Delco Electronics Corporation Process for forming vertical bipolar transistors and high voltage CMOS in a single integrated circuit chip

Also Published As

Publication number Publication date
FR2649830A1 (fr) 1991-01-18
DE69000929T2 (de) 1993-09-23
FR2649830B1 (fr) 1994-05-27
EP0408457A1 (de) 1991-01-16
EP0408457B1 (de) 1993-02-17
US5016078A (en) 1991-05-14
JPH0715946B2 (ja) 1995-02-22
JPH03224263A (ja) 1991-10-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee