FR2748855B1 - Procede de fabrication d'un dispositif de protection contre les surtensions pour un circuit integre cmos - Google Patents
Procede de fabrication d'un dispositif de protection contre les surtensions pour un circuit integre cmosInfo
- Publication number
- FR2748855B1 FR2748855B1 FR9606104A FR9606104A FR2748855B1 FR 2748855 B1 FR2748855 B1 FR 2748855B1 FR 9606104 A FR9606104 A FR 9606104A FR 9606104 A FR9606104 A FR 9606104A FR 2748855 B1 FR2748855 B1 FR 2748855B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- protection device
- overvoltage protection
- cmos circuit
- integrated cmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9606104A FR2748855B1 (fr) | 1996-05-15 | 1996-05-15 | Procede de fabrication d'un dispositif de protection contre les surtensions pour un circuit integre cmos |
US08/854,840 US5981323A (en) | 1996-05-15 | 1997-05-12 | Method and apparatus for protecting a device against voltage surges |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9606104A FR2748855B1 (fr) | 1996-05-15 | 1996-05-15 | Procede de fabrication d'un dispositif de protection contre les surtensions pour un circuit integre cmos |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2748855A1 FR2748855A1 (fr) | 1997-11-21 |
FR2748855B1 true FR2748855B1 (fr) | 1998-07-10 |
Family
ID=9492188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9606104A Expired - Fee Related FR2748855B1 (fr) | 1996-05-15 | 1996-05-15 | Procede de fabrication d'un dispositif de protection contre les surtensions pour un circuit integre cmos |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2748855B1 (fr) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4987465A (en) * | 1987-01-29 | 1991-01-22 | Advanced Micro Devices, Inc. | Electro-static discharge protection device for CMOS integrated circuit inputs |
EP0472654B1 (fr) * | 1989-05-17 | 1997-10-08 | Sarnoff Corporation | Dispositif de retour a zero declenche par de faibles tensions |
FR2649830B1 (fr) * | 1989-07-13 | 1994-05-27 | Sgs Thomson Microelectronics | Structure de circuit integre cmos protege contre les decharges electrostatiques |
US5369041A (en) * | 1993-07-14 | 1994-11-29 | Texas Instruments Incorporated | Method for forming a silicon controlled rectifier |
US5545910A (en) * | 1994-04-13 | 1996-08-13 | Winbond Electronics Corp. | ESD proctection device |
-
1996
- 1996-05-15 FR FR9606104A patent/FR2748855B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2748855A1 (fr) | 1997-11-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20070131 |