DE68927684D1 - Verfahren und Gerät zum Fokussieren eines Strahls elektromagnetischer Energie - Google Patents

Verfahren und Gerät zum Fokussieren eines Strahls elektromagnetischer Energie

Info

Publication number
DE68927684D1
DE68927684D1 DE68927684T DE68927684T DE68927684D1 DE 68927684 D1 DE68927684 D1 DE 68927684D1 DE 68927684 T DE68927684 T DE 68927684T DE 68927684 T DE68927684 T DE 68927684T DE 68927684 D1 DE68927684 D1 DE 68927684D1
Authority
DE
Germany
Prior art keywords
wafer
preferred
flat area
laser beam
spot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68927684T
Other languages
English (en)
Other versions
DE68927684T2 (de
Inventor
Peter Ebbing
Manoocher Birang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE68927684D1 publication Critical patent/DE68927684D1/de
Application granted granted Critical
Publication of DE68927684T2 publication Critical patent/DE68927684T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/12—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with apertures for inspecting the surface to be abraded
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/30—Systems for automatic generation of focusing signals using parallactic triangle with a base line
    • G02B7/32—Systems for automatic generation of focusing signals using parallactic triangle with a base line using active means, e.g. light emitter
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Weting (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Lasers (AREA)
  • Recrystallisation Techniques (AREA)
DE68927684T 1988-07-20 1989-07-11 Verfahren und Gerät zum Fokussieren eines Strahls elektromagnetischer Energie Expired - Fee Related DE68927684T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/221,979 US4953982A (en) 1988-07-20 1988-07-20 Method and apparatus for endpoint detection in a semiconductor wafer etching system

Publications (2)

Publication Number Publication Date
DE68927684D1 true DE68927684D1 (de) 1997-02-27
DE68927684T2 DE68927684T2 (de) 1997-05-28

Family

ID=22830235

Family Applications (3)

Application Number Title Priority Date Filing Date
DE68927963T Expired - Fee Related DE68927963T2 (de) 1988-07-20 1989-07-11 Verfahren zum Auffinden eines bevorzugten Punktes für einen Laserstrahl in einem Laserstrahlinterferometer und Laserinterferometerapparat
DE68927684T Expired - Fee Related DE68927684T2 (de) 1988-07-20 1989-07-11 Verfahren und Gerät zum Fokussieren eines Strahls elektromagnetischer Energie
DE68918363T Expired - Fee Related DE68918363T2 (de) 1988-07-20 1989-07-11 Verfahren und Vorrichtung zur Endpunktdetektion in einem Halbleiterscheibchenätzsystem.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE68927963T Expired - Fee Related DE68927963T2 (de) 1988-07-20 1989-07-11 Verfahren zum Auffinden eines bevorzugten Punktes für einen Laserstrahl in einem Laserstrahlinterferometer und Laserinterferometerapparat

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE68918363T Expired - Fee Related DE68918363T2 (de) 1988-07-20 1989-07-11 Verfahren und Vorrichtung zur Endpunktdetektion in einem Halbleiterscheibchenätzsystem.

Country Status (5)

Country Link
US (1) US4953982A (de)
EP (3) EP0566218B1 (de)
JP (2) JP2728509B2 (de)
AT (3) ATE151524T1 (de)
DE (3) DE68927963T2 (de)

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US5245794A (en) * 1992-04-09 1993-09-21 Advanced Micro Devices, Inc. Audio end point detector for chemical-mechanical polishing and method therefor
US5499733A (en) * 1992-09-17 1996-03-19 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US5408322A (en) * 1993-04-26 1995-04-18 Materials Research Corporation Self aligning in-situ ellipsometer and method of using for process monitoring
US5433650A (en) * 1993-05-03 1995-07-18 Motorola, Inc. Method for polishing a substrate
US5891352A (en) 1993-09-16 1999-04-06 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US6033721A (en) * 1994-10-26 2000-03-07 Revise, Inc. Image-based three-axis positioner for laser direct write microchemical reaction
US5843363A (en) * 1995-03-31 1998-12-01 Siemens Aktiengesellschaft Ablation patterning of multi-layered structures
US5708506A (en) * 1995-07-03 1998-01-13 Applied Materials, Inc. Apparatus and method for detecting surface roughness in a chemical polishing pad conditioning process
KR970053235A (ko) * 1995-12-20 1997-07-31 양승택 열식각에 의한 기판의 산화층 제거완료를 실시간으로 감지하는 방법
JP4327266B2 (ja) * 1997-02-26 2009-09-09 株式会社東芝 パターン寸法評価方法及びパターン形成方法
US5910011A (en) * 1997-05-12 1999-06-08 Applied Materials, Inc. Method and apparatus for monitoring processes using multiple parameters of a semiconductor wafer processing system
US6028669A (en) * 1997-07-23 2000-02-22 Luxtron Corporation Signal processing for in situ monitoring of the formation or removal of a transparent layer
US6129807A (en) 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
US6632321B2 (en) 1998-01-06 2003-10-14 Applied Materials, Inc Method and apparatus for monitoring and controlling wafer fabrication process
US6535779B1 (en) 1998-03-06 2003-03-18 Applied Materials, Inc. Apparatus and method for endpoint control and plasma monitoring
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
EP1125314A1 (de) 1998-07-10 2001-08-22 Applied Materials, Inc. Verbesserte endpunktbestimmung für einen substratfabrikationsprozess
US6252227B1 (en) * 1998-10-19 2001-06-26 Taiwan Semiconductor Manufacturing Company Method for sectioning a semiconductor wafer with FIB for viewing with SEM
WO2001013401A1 (de) 1999-08-12 2001-02-22 Infineon Technologies Ag Verfahren zur überwachung eines herstellungsprozesses zur bearbeitung eines substrats in der halbleiterfertigung
US6400458B1 (en) 1999-09-30 2002-06-04 Lam Research Corporation Interferometric method for endpointing plasma etch processes
US6580508B1 (en) * 1999-11-29 2003-06-17 United Microelectronics Corp. Method for monitoring a semiconductor wafer in a chemical mechanical polishing process
US6449038B1 (en) 1999-12-13 2002-09-10 Applied Materials, Inc. Detecting a process endpoint from a change in reflectivity
US7188142B2 (en) * 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
JP2002277220A (ja) * 2001-03-19 2002-09-25 Hitachi Ltd 膜厚計測のための計測点決定方法およびそれを用いた薄膜デバイスの製造方法並びに薄膜デバイスの製造装置
US6676482B2 (en) 2001-04-20 2004-01-13 Speedfam-Ipec Corporation Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
US6919279B1 (en) 2002-10-08 2005-07-19 Novellus Systems, Inc. Endpoint detection for high density plasma (HDP) processes
US20040127030A1 (en) * 2002-12-31 2004-07-01 Tokyo Electron Limited Method and apparatus for monitoring a material processing system
US6905624B2 (en) * 2003-07-07 2005-06-14 Applied Materials, Inc. Interferometric endpoint detection in a substrate etching process
US6829056B1 (en) 2003-08-21 2004-12-07 Michael Barnes Monitoring dimensions of features at different locations in the processing of substrates
US7136163B2 (en) 2003-12-09 2006-11-14 Applied Materials, Inc. Differential evaluation of adjacent regions for change in reflectivity
US7190458B2 (en) 2003-12-09 2007-03-13 Applied Materials, Inc. Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity
US7569463B2 (en) 2006-03-08 2009-08-04 Applied Materials, Inc. Method of thermal processing structures formed on a substrate
US9498845B2 (en) * 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
US9073169B2 (en) * 2008-11-07 2015-07-07 Applied Materials, Inc. Feedback control of polishing using optical detection of clearance
CN102142384B (zh) 2010-12-02 2013-01-09 深圳市华星光电技术有限公司 金属蚀刻终点侦测方法及金属蚀刻终点侦测机
CN109148316A (zh) * 2018-09-07 2019-01-04 北京智芯微电子科技有限公司 用于精确判定等离子体刻蚀机刻蚀芯片终点的监测方法
CN114720097B (zh) * 2022-04-13 2023-06-09 安徽科瑞思创晶体材料有限责任公司 一种用于tgg晶片检测的光学检测系统

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Also Published As

Publication number Publication date
DE68927963D1 (de) 1997-05-15
DE68918363T2 (de) 1995-02-23
ATE147849T1 (de) 1997-02-15
EP0566217A3 (en) 1993-12-22
US4953982A (en) 1990-09-04
ATE112048T1 (de) 1994-10-15
DE68927684T2 (de) 1997-05-28
JPH07122549A (ja) 1995-05-12
EP0566218B1 (de) 1997-04-09
DE68918363D1 (de) 1994-10-27
EP0566218A3 (en) 1993-12-22
ATE151524T1 (de) 1997-04-15
EP0566217A2 (de) 1993-10-20
EP0352004B1 (de) 1994-09-21
DE68927963T2 (de) 1997-07-17
EP0352004A2 (de) 1990-01-24
JPH0273629A (ja) 1990-03-13
JP2728509B2 (ja) 1998-03-18
EP0566217B1 (de) 1997-01-15
EP0566218A2 (de) 1993-10-20
JP2650857B2 (ja) 1997-09-10
EP0352004A3 (en) 1990-11-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee