DE68927684D1 - Verfahren und Gerät zum Fokussieren eines Strahls elektromagnetischer Energie - Google Patents
Verfahren und Gerät zum Fokussieren eines Strahls elektromagnetischer EnergieInfo
- Publication number
- DE68927684D1 DE68927684D1 DE68927684T DE68927684T DE68927684D1 DE 68927684 D1 DE68927684 D1 DE 68927684D1 DE 68927684 T DE68927684 T DE 68927684T DE 68927684 T DE68927684 T DE 68927684T DE 68927684 D1 DE68927684 D1 DE 68927684D1
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- preferred
- flat area
- laser beam
- spot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000001514 detection method Methods 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/12—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with apertures for inspecting the surface to be abraded
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/30—Systems for automatic generation of focusing signals using parallactic triangle with a base line
- G02B7/32—Systems for automatic generation of focusing signals using parallactic triangle with a base line using active means, e.g. light emitter
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Weting (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
- Lasers (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/221,979 US4953982A (en) | 1988-07-20 | 1988-07-20 | Method and apparatus for endpoint detection in a semiconductor wafer etching system |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68927684D1 true DE68927684D1 (de) | 1997-02-27 |
DE68927684T2 DE68927684T2 (de) | 1997-05-28 |
Family
ID=22830235
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68927963T Expired - Fee Related DE68927963T2 (de) | 1988-07-20 | 1989-07-11 | Verfahren zum Auffinden eines bevorzugten Punktes für einen Laserstrahl in einem Laserstrahlinterferometer und Laserinterferometerapparat |
DE68927684T Expired - Fee Related DE68927684T2 (de) | 1988-07-20 | 1989-07-11 | Verfahren und Gerät zum Fokussieren eines Strahls elektromagnetischer Energie |
DE68918363T Expired - Fee Related DE68918363T2 (de) | 1988-07-20 | 1989-07-11 | Verfahren und Vorrichtung zur Endpunktdetektion in einem Halbleiterscheibchenätzsystem. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68927963T Expired - Fee Related DE68927963T2 (de) | 1988-07-20 | 1989-07-11 | Verfahren zum Auffinden eines bevorzugten Punktes für einen Laserstrahl in einem Laserstrahlinterferometer und Laserinterferometerapparat |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68918363T Expired - Fee Related DE68918363T2 (de) | 1988-07-20 | 1989-07-11 | Verfahren und Vorrichtung zur Endpunktdetektion in einem Halbleiterscheibchenätzsystem. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4953982A (de) |
EP (3) | EP0566218B1 (de) |
JP (2) | JP2728509B2 (de) |
AT (3) | ATE151524T1 (de) |
DE (3) | DE68927963T2 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208644A (en) * | 1990-05-18 | 1993-05-04 | Xinix, Inc. | Interference removal |
US5196285A (en) * | 1990-05-18 | 1993-03-23 | Xinix, Inc. | Method for control of photoresist develop processes |
JPH07111340B2 (ja) * | 1990-10-31 | 1995-11-29 | 信越半導体株式会社 | パターンシフト測定方法 |
GB2257507B (en) * | 1991-06-26 | 1995-03-01 | Digital Equipment Corp | Semiconductor wafer processing with across-wafer critical dimension monitoring using optical endpoint detection |
US5245794A (en) * | 1992-04-09 | 1993-09-21 | Advanced Micro Devices, Inc. | Audio end point detector for chemical-mechanical polishing and method therefor |
US5499733A (en) * | 1992-09-17 | 1996-03-19 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
US5408322A (en) * | 1993-04-26 | 1995-04-18 | Materials Research Corporation | Self aligning in-situ ellipsometer and method of using for process monitoring |
US5433650A (en) * | 1993-05-03 | 1995-07-18 | Motorola, Inc. | Method for polishing a substrate |
US5891352A (en) | 1993-09-16 | 1999-04-06 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
US6033721A (en) * | 1994-10-26 | 2000-03-07 | Revise, Inc. | Image-based three-axis positioner for laser direct write microchemical reaction |
US5843363A (en) * | 1995-03-31 | 1998-12-01 | Siemens Aktiengesellschaft | Ablation patterning of multi-layered structures |
US5708506A (en) * | 1995-07-03 | 1998-01-13 | Applied Materials, Inc. | Apparatus and method for detecting surface roughness in a chemical polishing pad conditioning process |
KR970053235A (ko) * | 1995-12-20 | 1997-07-31 | 양승택 | 열식각에 의한 기판의 산화층 제거완료를 실시간으로 감지하는 방법 |
JP4327266B2 (ja) * | 1997-02-26 | 2009-09-09 | 株式会社東芝 | パターン寸法評価方法及びパターン形成方法 |
US5910011A (en) * | 1997-05-12 | 1999-06-08 | Applied Materials, Inc. | Method and apparatus for monitoring processes using multiple parameters of a semiconductor wafer processing system |
US6028669A (en) * | 1997-07-23 | 2000-02-22 | Luxtron Corporation | Signal processing for in situ monitoring of the formation or removal of a transparent layer |
US6129807A (en) | 1997-10-06 | 2000-10-10 | Applied Materials, Inc. | Apparatus for monitoring processing of a substrate |
US6632321B2 (en) | 1998-01-06 | 2003-10-14 | Applied Materials, Inc | Method and apparatus for monitoring and controlling wafer fabrication process |
US6535779B1 (en) | 1998-03-06 | 2003-03-18 | Applied Materials, Inc. | Apparatus and method for endpoint control and plasma monitoring |
US6081334A (en) * | 1998-04-17 | 2000-06-27 | Applied Materials, Inc | Endpoint detection for semiconductor processes |
US6390019B1 (en) | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
EP1125314A1 (de) | 1998-07-10 | 2001-08-22 | Applied Materials, Inc. | Verbesserte endpunktbestimmung für einen substratfabrikationsprozess |
US6252227B1 (en) * | 1998-10-19 | 2001-06-26 | Taiwan Semiconductor Manufacturing Company | Method for sectioning a semiconductor wafer with FIB for viewing with SEM |
WO2001013401A1 (de) | 1999-08-12 | 2001-02-22 | Infineon Technologies Ag | Verfahren zur überwachung eines herstellungsprozesses zur bearbeitung eines substrats in der halbleiterfertigung |
US6400458B1 (en) | 1999-09-30 | 2002-06-04 | Lam Research Corporation | Interferometric method for endpointing plasma etch processes |
US6580508B1 (en) * | 1999-11-29 | 2003-06-17 | United Microelectronics Corp. | Method for monitoring a semiconductor wafer in a chemical mechanical polishing process |
US6449038B1 (en) | 1999-12-13 | 2002-09-10 | Applied Materials, Inc. | Detecting a process endpoint from a change in reflectivity |
US7188142B2 (en) * | 2000-11-30 | 2007-03-06 | Applied Materials, Inc. | Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility |
US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
JP2002277220A (ja) * | 2001-03-19 | 2002-09-25 | Hitachi Ltd | 膜厚計測のための計測点決定方法およびそれを用いた薄膜デバイスの製造方法並びに薄膜デバイスの製造装置 |
US6676482B2 (en) | 2001-04-20 | 2004-01-13 | Speedfam-Ipec Corporation | Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling |
US6919279B1 (en) | 2002-10-08 | 2005-07-19 | Novellus Systems, Inc. | Endpoint detection for high density plasma (HDP) processes |
US20040127030A1 (en) * | 2002-12-31 | 2004-07-01 | Tokyo Electron Limited | Method and apparatus for monitoring a material processing system |
US6905624B2 (en) * | 2003-07-07 | 2005-06-14 | Applied Materials, Inc. | Interferometric endpoint detection in a substrate etching process |
US6829056B1 (en) | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
US7136163B2 (en) | 2003-12-09 | 2006-11-14 | Applied Materials, Inc. | Differential evaluation of adjacent regions for change in reflectivity |
US7190458B2 (en) | 2003-12-09 | 2007-03-13 | Applied Materials, Inc. | Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity |
US7569463B2 (en) | 2006-03-08 | 2009-08-04 | Applied Materials, Inc. | Method of thermal processing structures formed on a substrate |
US9498845B2 (en) * | 2007-11-08 | 2016-11-22 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
US9073169B2 (en) * | 2008-11-07 | 2015-07-07 | Applied Materials, Inc. | Feedback control of polishing using optical detection of clearance |
CN102142384B (zh) | 2010-12-02 | 2013-01-09 | 深圳市华星光电技术有限公司 | 金属蚀刻终点侦测方法及金属蚀刻终点侦测机 |
CN109148316A (zh) * | 2018-09-07 | 2019-01-04 | 北京智芯微电子科技有限公司 | 用于精确判定等离子体刻蚀机刻蚀芯片终点的监测方法 |
CN114720097B (zh) * | 2022-04-13 | 2023-06-09 | 安徽科瑞思创晶体材料有限责任公司 | 一种用于tgg晶片检测的光学检测系统 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5453864A (en) * | 1977-10-05 | 1979-04-27 | Sanyo Electric Co Ltd | Monitoring method of line widths |
JPS5741637A (en) * | 1980-08-26 | 1982-03-08 | Dainippon Printing Co Ltd | Microstep tablet |
EP0091400A1 (de) * | 1982-04-02 | 1983-10-12 | GRETAG Aktiengesellschaft | Verfahren und Vorrichtung zur Fokussierung eines kohärenten Lichtstrahls |
JPS5958885A (ja) * | 1982-09-29 | 1984-04-04 | Toshiba Corp | ビ−ム光出力モニタ装置 |
JPS59186325A (ja) * | 1983-04-01 | 1984-10-23 | コンパニ−・アンデユストリエル・デ・テレコミユニカシオン・セイテ−アルカテル | ドライエツチング装置 |
US4569717A (en) * | 1983-05-24 | 1986-02-11 | Dainippon Screen Mfg. Co., Ltd. | Method of surface treatment |
JPS60170936A (ja) * | 1984-02-15 | 1985-09-04 | Fujitsu Ltd | 自動位置合わせ検査装置 |
US4618262A (en) * | 1984-04-13 | 1986-10-21 | Applied Materials, Inc. | Laser interferometer system and method for monitoring and controlling IC processing |
US4703434A (en) * | 1984-04-24 | 1987-10-27 | The Perkin-Elmer Corporation | Apparatus for measuring overlay error |
JPH0610694B2 (ja) * | 1985-04-12 | 1994-02-09 | 株式会社日立製作所 | 自動焦点合せ方法及び装置 |
JPH0682636B2 (ja) * | 1985-04-19 | 1994-10-19 | 株式会社日立製作所 | ドライエッチング方法 |
JPS6221224A (ja) * | 1985-07-19 | 1987-01-29 | Applied Materials Japan Kk | エンドポイントモニタ |
DE3600346A1 (de) * | 1986-01-08 | 1987-07-09 | Fraunhofer Ges Forschung | Verfahren zur abbildenden laserinterferometrie und laserinterferometer zur durchfuehrung des verfahrens |
JPH0691045B2 (ja) * | 1986-03-03 | 1994-11-14 | 日電アネルバ株式会社 | エツチングモニタ−装置 |
US4818886A (en) * | 1986-11-12 | 1989-04-04 | Quential, Inc. | Method and apparatus for self-referencing and self-focusing a bar-code reader |
-
1988
- 1988-07-20 US US07/221,979 patent/US4953982A/en not_active Expired - Fee Related
-
1989
- 1989-07-11 AT AT93201861T patent/ATE151524T1/de not_active IP Right Cessation
- 1989-07-11 EP EP93201861A patent/EP0566218B1/de not_active Expired - Lifetime
- 1989-07-11 DE DE68927963T patent/DE68927963T2/de not_active Expired - Fee Related
- 1989-07-11 AT AT89307009T patent/ATE112048T1/de not_active IP Right Cessation
- 1989-07-11 EP EP89307009A patent/EP0352004B1/de not_active Expired - Lifetime
- 1989-07-11 DE DE68927684T patent/DE68927684T2/de not_active Expired - Fee Related
- 1989-07-11 EP EP93201860A patent/EP0566217B1/de not_active Expired - Lifetime
- 1989-07-11 AT AT93201860T patent/ATE147849T1/de not_active IP Right Cessation
- 1989-07-11 DE DE68918363T patent/DE68918363T2/de not_active Expired - Fee Related
- 1989-07-19 JP JP1187231A patent/JP2728509B2/ja not_active Expired - Lifetime
-
1994
- 1994-08-22 JP JP6196904A patent/JP2650857B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE68927963D1 (de) | 1997-05-15 |
DE68918363T2 (de) | 1995-02-23 |
ATE147849T1 (de) | 1997-02-15 |
EP0566217A3 (en) | 1993-12-22 |
US4953982A (en) | 1990-09-04 |
ATE112048T1 (de) | 1994-10-15 |
DE68927684T2 (de) | 1997-05-28 |
JPH07122549A (ja) | 1995-05-12 |
EP0566218B1 (de) | 1997-04-09 |
DE68918363D1 (de) | 1994-10-27 |
EP0566218A3 (en) | 1993-12-22 |
ATE151524T1 (de) | 1997-04-15 |
EP0566217A2 (de) | 1993-10-20 |
EP0352004B1 (de) | 1994-09-21 |
DE68927963T2 (de) | 1997-07-17 |
EP0352004A2 (de) | 1990-01-24 |
JPH0273629A (ja) | 1990-03-13 |
JP2728509B2 (ja) | 1998-03-18 |
EP0566217B1 (de) | 1997-01-15 |
EP0566218A2 (de) | 1993-10-20 |
JP2650857B2 (ja) | 1997-09-10 |
EP0352004A3 (en) | 1990-11-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |