DE68924573D1 - Bipolarer Heisselektronen-Transistor. - Google Patents

Bipolarer Heisselektronen-Transistor.

Info

Publication number
DE68924573D1
DE68924573D1 DE68924573T DE68924573T DE68924573D1 DE 68924573 D1 DE68924573 D1 DE 68924573D1 DE 68924573 T DE68924573 T DE 68924573T DE 68924573 T DE68924573 T DE 68924573T DE 68924573 D1 DE68924573 D1 DE 68924573D1
Authority
DE
Germany
Prior art keywords
hot electron
electron transistor
bipolar
bipolar hot
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68924573T
Other languages
English (en)
Other versions
DE68924573T2 (de
Inventor
Anthony Frederic John Levi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE68924573D1 publication Critical patent/DE68924573D1/de
Publication of DE68924573T2 publication Critical patent/DE68924573T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7373—Vertical transistors having a two-dimensional base, e.g. modulation-doped base, inversion layer base, delta-doped base

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE68924573T 1988-09-07 1989-08-31 Bipolarer Heisselektronen-Transistor. Expired - Fee Related DE68924573T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24127988A 1988-09-07 1988-09-07

Publications (2)

Publication Number Publication Date
DE68924573D1 true DE68924573D1 (de) 1995-11-23
DE68924573T2 DE68924573T2 (de) 1996-06-20

Family

ID=22910024

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68924573T Expired - Fee Related DE68924573T2 (de) 1988-09-07 1989-08-31 Bipolarer Heisselektronen-Transistor.

Country Status (5)

Country Link
EP (1) EP0358407B1 (de)
JP (1) JPH0693506B2 (de)
KR (2) KR900005609A (de)
CA (1) CA1303754C (de)
DE (1) DE68924573T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1318418C (en) * 1988-09-28 1993-05-25 Richard Norman Nottenburg Heterostructure bipolar transistor
US5304816A (en) * 1992-11-25 1994-04-19 At&T Bell Laboratories Article comprising a "ballistic" heterojunction bipolar transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61276261A (ja) * 1985-05-30 1986-12-06 Fujitsu Ltd 高速バイポ−ラトランジスタの製造方法
US4825265A (en) * 1987-09-04 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Transistor

Also Published As

Publication number Publication date
EP0358407A3 (en) 1990-11-22
JPH0693506B2 (ja) 1994-11-16
KR940002019Y1 (ko) 1994-04-01
JPH02113579A (ja) 1990-04-25
CA1303754C (en) 1992-06-16
DE68924573T2 (de) 1996-06-20
EP0358407B1 (de) 1995-10-18
EP0358407A2 (de) 1990-03-14
KR900005609A (ko) 1990-04-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee