DE68923593D1 - Quanten-Effekt-Halbleiteranordnung mit negativen differentiellen Widerstandseigenschaften. - Google Patents

Quanten-Effekt-Halbleiteranordnung mit negativen differentiellen Widerstandseigenschaften.

Info

Publication number
DE68923593D1
DE68923593D1 DE68923593T DE68923593T DE68923593D1 DE 68923593 D1 DE68923593 D1 DE 68923593D1 DE 68923593 T DE68923593 T DE 68923593T DE 68923593 T DE68923593 T DE 68923593T DE 68923593 D1 DE68923593 D1 DE 68923593D1
Authority
DE
Germany
Prior art keywords
quantum
semiconductor device
resistance properties
negative differential
differential resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923593T
Other languages
English (en)
Other versions
DE68923593T2 (de
Inventor
Naoki Yokoyama
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE68923593D1 publication Critical patent/DE68923593D1/de
Publication of DE68923593T2 publication Critical patent/DE68923593T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE68923593T 1988-09-12 1989-09-12 Quanten-Effekt-Halbleiteranordnung mit negativen differentiellen Widerstandseigenschaften. Expired - Fee Related DE68923593T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63226450A JPH0276262A (ja) 1988-09-12 1988-09-12 半導体装置

Publications (2)

Publication Number Publication Date
DE68923593D1 true DE68923593D1 (de) 1995-08-31
DE68923593T2 DE68923593T2 (de) 1996-01-11

Family

ID=16845287

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923593T Expired - Fee Related DE68923593T2 (de) 1988-09-12 1989-09-12 Quanten-Effekt-Halbleiteranordnung mit negativen differentiellen Widerstandseigenschaften.

Country Status (4)

Country Link
US (1) US5021863A (de)
EP (1) EP0363238B1 (de)
JP (1) JPH0276262A (de)
DE (1) DE68923593T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USH1570H (en) * 1993-03-31 1996-08-06 The United States Of America As Represented By The Secretary Of The Army Variable lateral quantum confinement transistor
US6635907B1 (en) * 1999-11-17 2003-10-21 Hrl Laboratories, Llc Type II interband heterostructure backward diodes
US7700969B1 (en) * 2007-01-30 2010-04-20 Hrl Laboratories, Llc Type II interband heterostructure backward diodes
JP5790262B2 (ja) * 2011-08-01 2015-10-07 富士通株式会社 半導体装置
IL225872A (en) * 2013-04-22 2015-03-31 Semi Conductor Devices An Elbit Systems Rafael Partnership Photo detector semi-conductor with barrier
US11195924B2 (en) * 2016-06-27 2021-12-07 Intel Corporation Broken bandgap contact

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198644A (en) * 1978-06-09 1980-04-15 The United States Of America As Represented By The Secretary Of The Army Tunnel diode
US4395722A (en) * 1980-10-21 1983-07-26 The United States Of America As Represented By The Secretary Of The Army Heterojunction transistor
US4371884A (en) * 1981-01-23 1983-02-01 The United States Of America As Represented By The Secretary Of The Army InAs-GaSb Tunnel diode
JPS60210880A (ja) * 1984-04-04 1985-10-23 Toshiba Corp 半導体装置
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
JPS62128559A (ja) * 1985-11-29 1987-06-10 Fujitsu Ltd 半導体装置
JPH0760890B2 (ja) * 1986-03-05 1995-06-28 富士通株式会社 高速半導体装置
GB2191035A (en) * 1986-05-23 1987-12-02 Philips Electronic Associated Hot charge-carrier transistors
GB2191036A (en) * 1986-05-23 1987-12-02 Philips Electronic Associated Hot charge-carrier transistors
US4780749A (en) * 1986-07-01 1988-10-25 Hughes Aircraft Company Double barrier tunnel diode having modified injection layer
US4829343A (en) * 1987-07-17 1989-05-09 American Telephone & Telegraph Company, At&T Bell Laboratories Hot electron transistor

Also Published As

Publication number Publication date
EP0363238A2 (de) 1990-04-11
EP0363238A3 (en) 1990-04-25
EP0363238B1 (de) 1995-07-26
DE68923593T2 (de) 1996-01-11
JPH0276262A (ja) 1990-03-15
US5021863A (en) 1991-06-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee