DE68922939D1 - Halbleiterbauelement mit Schaltkreiskomponenten unter symmetrischem Einfluss unerwünschter Störungen. - Google Patents

Halbleiterbauelement mit Schaltkreiskomponenten unter symmetrischem Einfluss unerwünschter Störungen.

Info

Publication number
DE68922939D1
DE68922939D1 DE68922939T DE68922939T DE68922939D1 DE 68922939 D1 DE68922939 D1 DE 68922939D1 DE 68922939 T DE68922939 T DE 68922939T DE 68922939 T DE68922939 T DE 68922939T DE 68922939 D1 DE68922939 D1 DE 68922939D1
Authority
DE
Germany
Prior art keywords
circuit components
semiconductor component
components under
unwanted interference
symmetrical influence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922939T
Other languages
English (en)
Other versions
DE68922939T2 (de
Inventor
Hiroyuki Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE68922939D1 publication Critical patent/DE68922939D1/de
Publication of DE68922939T2 publication Critical patent/DE68922939T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE68922939T 1988-07-26 1989-07-21 Halbleiterbauelement mit Schaltkreiskomponenten unter symmetrischem Einfluss unerwünschter Störungen. Expired - Fee Related DE68922939T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63186001A JPH0235765A (ja) 1988-07-26 1988-07-26 半導体集積回路装置

Publications (2)

Publication Number Publication Date
DE68922939D1 true DE68922939D1 (de) 1995-07-13
DE68922939T2 DE68922939T2 (de) 1995-10-19

Family

ID=16180635

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922939T Expired - Fee Related DE68922939T2 (de) 1988-07-26 1989-07-21 Halbleiterbauelement mit Schaltkreiskomponenten unter symmetrischem Einfluss unerwünschter Störungen.

Country Status (4)

Country Link
US (1) US5060199A (de)
EP (1) EP0352985B1 (de)
JP (1) JPH0235765A (de)
DE (1) DE68922939T2 (de)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays
US4730280A (en) * 1984-11-20 1988-03-08 Fujitsu Limited Semiconductor memory device having sense amplifiers with different driving abilities
JPS63104296A (ja) * 1986-10-21 1988-05-09 Nec Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH0235765A (ja) 1990-02-06
EP0352985A2 (de) 1990-01-31
EP0352985A3 (de) 1991-02-20
EP0352985B1 (de) 1995-06-07
US5060199A (en) 1991-10-22
DE68922939T2 (de) 1995-10-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee